Guohao Yu

发表

Y2O3-modified Ba(Ti0.96Sn0.04)O3 ceramics with improved piezoelectricity and raised Curie temperature

Guorong Li, Zhe Wang, Wei Li, 2014 .

Normally-off p-GaN/AlGaN/GaN high electron mobility transistors using hydrogen plasma treatment

Baoshun Zhang, Zhang Zhili, Jie Yuan, 2016 .

Influence factors and temperature reliability of ohmic contact on AlGaN/GaN HEMTs

Baoshun Zhang, Guohao Yu, K. Fu, 2018 .

Interface Si donor control to improve dynamic performance of AlGaN/GaN MIS-HEMTs

Baoshun Zhang, Guohao Yu, K. Fu, 2017 .

High-Quality Etching of GaN Materials with Extremely Slow Rate and Low Damage

Guohao Yu, X. Zhang, Changhai Yan, 2021 .

Fabrication and characteristics of flexible normally-off AlGaN/GaN HEMTs

Baoshun Zhang, E. Gu, P. Tian, 2020 .

Study on shallow donor-type impurities of GaN epilayer regrown by epitaxial lateral overgrowth technique

Guohao Yu, Yong Cai, Xuguang Deng, 2021 .

Reduced Reverse Gate Leakage Current for p‐GaN Gate High‐Electron‐Mobility Transistors by a Surface‐Etching Method

Baoshun Zhang, Z. Zeng, Guohao Yu, 2021, physica status solidi (a).

The influence of polarization Coulomb field scattering on the parasitic source resistance of E-mode P-GaN/AlGaN/GaN heterostructure field-effect transistors

Baoshun Zhang, Yan Liu, Zhaojun Lin, 2021 .

A Novel Normally-off Laterally Coupled p-GaN Gate HEMT

T. He, Baoshun Zhang, Guohao Yu, 2021, 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).

Normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors using oxygen plasma treatment

T. He, Baoshun Zhang, Yanfei Zhao, 2016, Applied Physics Express.

Monolithic integration of enhancement/depletion-mode high electron mobility transistors using hydrogen plasma treatment

Baoshun Zhang, Z. Zeng, Guohao Yu, 2019, Applied Physics Express.

Gate leakage mechanisms in normally off p-GaN/AlGaN/GaN high electron mobility transistors

Baoshun Zhang, Guohao Yu, Yong Cai, 2018, Applied Physics Letters.

Studies on Fabrication and Reliability of GaN High-Resistivity-Cap-Layer HEMT

Baoshun Zhang, Guohao Yu, K. Fu, 2018, IEEE Transactions on Electron Devices.

16.8 A/600 V AlGaN/GaN MIS-HEMTs employing LPCVD-Si3N4 as gate insulator

Baoshun Zhang, Wei Huang, Shuxin Tan, 2015 .

Normally Off AlGaN/GaN MIS-High-Electron Mobility Transistors Fabricated by Using Low Pressure Chemical Vapor Deposition Si3N4 Gate Dielectric and Standard Fluorine Ion Implantation

Wei Huang, Baoshun Zhang, Yong Cai, 2015, IEEE Electron Device Letters.

Fabrication of normally-off AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors by photo-electrochemical gate recess etching in ionic liquid

Baoshun Zhang, Shuiming Li, Qian Sun, 2016 .

5.3A/400V normally-off AlGaN/GaN-on-Si MOS-HEMT with high threshold voltage and large gate swing

Kevin J. Chen, Baoshun Zhang, Hongwei Chen, 2013 .

AlGaN/GaN MIS-HEMTs of Very-Low ${V}_{\sf {{th}}}$ Hysteresis and Current Collapse With In-Situ Pre-Deposition Plasma Nitridation and LPCVD-Si3N4 Gate Insulator

Zhili Zhang, Yanfei Zhao, Guohao Yu, 2017, IEEE Electron Device Letters.

Enhancement mode AlGaN/GaN HEMTs by fluorine ion thermal diffusion with high Vth stability

Baoshun Zhang, F. Lin, Guohao Yu, 2019, Applied Physics Express.

Low Threshold Voltage Shift in AlGaN/GaN MIS-HEMTs on Si Substrate Using SiNx/SiON as Composite Gate Dielectric

Baoshun Zhang, Guohao Yu, K. Fu, 2022, Electronics.

Enhancement-mode n-GaN gate p-channel heterostructure field effect transistors based on GaN/AlGaN 2D hole gas

Baoshun Zhang, Guohao Yu, Jinyan Wang, 2019, Applied Physics Letters.

Two-terminal terahertz detectors based on AlGaN/GaN high-electron-mobility transistors

Baoshun Zhang, Zhili Zhang, Guohao Yu, 2019, Applied Physics Letters.

High quality of N-polar GaN film fabricated by layer transfer technology using high selective material removal rate of CMP

Baoshun Zhang, Guohao Yu, Xuguang Deng, 2022, Materials Science in Semiconductor Processing.

TCAD-Based Investigation of the Electrical Characteristics of Normally off p-GaN Passivated GaN HEMTs

Baoshun Zhang, Guohao Yu, Wen Liu, 2022, 2022 International Conference on IC Design and Technology (ICICDT).

Simulation of enhancement-mode recessed-gate p-channel HFETs based on polarization-induced doping and an InGaN/GaN/AlGaN heterostructure

Baoshun Zhang, Wei Huang, Guohao Yu, 2021 .

Broadband Ultraviolet Photodetector Based on Vertical Ga2O3/GaN Nanowire Array with High Responsivity

Guohao Yu, Yukun Zhao, Kai Zhang, 2019, Advanced Optical Materials.

Solar-blind ultraviolet photodetector based on graphene/vertical Ga2O3 nanowire array heterojunction

Shulong Lu, Baoshun Zhang, Guohao Yu, 2018, nano Online.

Gate leakage mechanisms of the AlGaN/GaN HEMT with fluorinated graphene passivation

Baoshun Zhang, Z. Zeng, Guohao Yu, 2023, Materials Science in Semiconductor Processing.

Magnetic properties and magnetic domain structure of bulk glass forming Nd60Al10Fe20Co10 alloy

J. Eckert, Guohao Yu, B. Wei, 2004 .

Spin–orbit torques in GaN/NiFe bilayers

Z. Zeng, Weiming Lv, R. Xiong, 2018, Journal of Physics D: Applied Physics.

Influence of the illumination on weak antilocalization in an AlxGa1−xN∕GaN heterostructure with strong spin-orbit coupling

J. Chu, Guohao Yu, N. Tang, 2008 .

Tunneling-Hopping Transport Model for Reverse Leakage Current in InGaN/GaN Blue Light-Emitting Diodes

Hai Lu, Xiaofeng Gu, Bin Liu, 2017, IEEE Photonics Technology Letters.

Off-state electrical breakdown of AlGaN/GaN/Ga(Al)N HEMT heterostructure grown on Si(111)

Baoshun Zhang, Sheng Liu, Yong Cai, 2016 .

Breakdown Enhancement and Current Collapse Suppression by High-Resistivity GaN Cap Layer in Normally-Off AlGaN/GaN HEMTs

Baoshun Zhang, Qi Zhou, Jie Yuan, 2017, IEEE Electron Device Letters.

Dynamic Characterizations of AlGaN/GaN HEMTs With Field Plates Using a Double-Gate Structure

Baoshun Zhang, Guohao Yu, Yong Cai, 2013, IEEE Electron Device Letters.

Studies on High-Voltage GaN-on-Si MIS-HEMTs Using LPCVD Si3N4 as Gate Dielectric and Passivation Layer

Wei Huang, Baoshun Zhang, Yong Cai, 2016, IEEE Transactions on Electron Devices.

Bandwidth-enhanced magnetoelectric antenna based on composite bulk acoustic resonators

Baoshun Zhang, Z. Zeng, Guohao Yu, 2022, Applied Physics Letters.

High-resistivity unintentionally carbon-doped GaN layers with nitrogen as nucleation layer carrier gas grown by metal-organic chemical vapor deposition

Baoshun Zhang, Guohao Yu, K. Fu, 2017 .

2.69 kV/2.11 mΩ⋅cm and Low Leakage p-GaN Stripe Array Gated Hybrid Anode Diodes With Low Turn-on Voltage

Baoshun Zhang, Guohao Yu, H. Fu, 2023, IEEE Electron Device Letters.

2.0 kV/2.1 mΩ·cm2 Lateral p-GaN/AlGaN/GaN Hybrid Anode Diodes With Hydrogen Plasma Treatment

Baoshun Zhang, Z. Zeng, Guohao Yu, 2022, IEEE Electron Device Letters.

Dual Current and Voltage Sensitivity Temperature Sensor Based on Lateral p-GaN/AlGaN/GaN Hybrid Anode Diode

Baoshun Zhang, Guohao Yu, K. Fu, 2021, IEEE Sensors Journal.

Improvement of Breakdown Voltage and ON-Resistance in Normally-OFF AlGaN/GaN HEMTs Using Etching-Free p-GaN Stripe Array Gate

Baoshun Zhang, Wei Huang, Guohao Yu, 2021, IEEE Transactions on Electron Devices.

Current Drops in CF4 Plasma-Treated AlGaN/GaN Heterojunction in Polar Gas Ambient

Guohao Yu, Zhihua Dong, Xiaodong Zhang, 2023, Electronics.

Design and simulation of a novel E-mode GaN MIS-HEMT based on a cascode connection for suppression of electric field under gate and improvement of reliability

Baoshun Zhang, Xiaodong Zhang, Yong Cai, 2017 .

Gallium Nitride Schottky betavoltaic nuclear batteries

Guohao Yu, Guohao Yu, D. Su, 2011 .

Monolithic high-performance micro-LEDs using planar-geometry pixelation process for high-resolution micro-display applications

Baoshun Zhang, Guohao Yu, Z. Xie, 2022, Applied Physics Letters.

AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with reduced leakage current and enhanced breakdown voltage using aluminum ion implantation

Baoshun Zhang, Shuiming Li, Qian Sun, 2016 .

A Double-Gate AlGaN/GaN HEMT With Improved Dynamic Performance

Baoshun Zhang, Guohao Yu, Yong Cai, 2013, IEEE Electron Device Letters.

GaN‐based p–i–n X‐ray detection

Guohao Yu, Min Lu, K. Fu, 2012 .

X‐ray detectors based on Fe doped GaN photoconductors

Guohao Yu, Guo-guang Zhang, Min Lu, 2011 .

Comparative Analysis of the GaN Nonpolar Plane Morphology by Wet Treatment and Its Effect on Electrical Properties in Trench MOSFET.

Z. Zeng, Guohao Yu, Xin Zhou, 2023, ACS applied materials & interfaces.