J. H. Weaver

发表

Doping of C60 with iodine

R. Smalley, T. Ohno, G. Kroll, 1992, Nature.

Optical constants of Cu, Ag, and Au revisited

J. H. Weaver, Shaista Babar, 2015 .

Optical properties of metals.

D. Lynch, E. Koch, J. H. Weaver, 1981, Applied optics.

Optical properties of Ti, Zr, and Hf from 0.15 to 30 eV

David W. Lynch, Clifford G. Olson, D. Lynch, 1975 .

Electron stimulated polymerization of solid C60

J. H. Weaver, Y. B. Zhao, D. M. Poirier, 1994 .

Interface bonding and manipulation of Ag and Cu nanocrystals on Si(111)-(7×7)-based surfaces

S. Jay Chey, J. H. Weaver, Lin Huang, 1999 .

Electron- and photon-stimulated modification of GaAs(110), Si(100), and Si(111)

Koji S. Nakayama, J. H. Weaver, K. Nakayama, 1999 .

Temperature-dependent x-ray photoemission studies of metastable Co/polyimide interface formation

Harry M. Meyer, J. H. Weaver, Steven G. Anderson, 1988 .

Anisotropic optical properties of heavy-rare-earth single crystals

David W. Lynch, D. Lynch, J. H. Weaver, 1975 .

The Uses of Synchrotron Radiation

Ednor M. Rowe, J. H. Weaver, 1977 .

Electronic structure of Si(001)-c(4x2) analyzed by scanning tunneling spectroscopy and ab initio simulations

James R. Chelikowsky, Koji S. Nakayama, Kenji Ohmori, 2006 .

Solid State Properties of Fullerenes and Fullerene-Based Materials

J. H. Weaver, D. M. Poirier, D. Poirier, 1995 .

Electronic States of KxC60: Insulating, Metallic, and Superconducting Character

R. Smalley, J. Martins, J. H. Weaver, 1991, Science.

Optical examination of the electronic structure of single-crystal hcp scandium

J. H. Weaver, C. G. Olson, 1977 .

Y, Ba, Cu, and Ti interface reactions with SrTiO3 (100) surfaces

Harry M. Meyer, H. Meyer, J. H. Weaver, 1989 .

Optical properties of V, Ta, and Mo from 0.1 to 35 eV

David W. Lynch, Clifford G. Olson, D. Lynch, 1974 .

Vacancy-Assisted Halogen Reactions on Sis100d-s2 E 1d

C. Aldao, J. H. Weaver, K. Nakayama, 1999 .

Nanoparticle aggregation due to dewetting of sandwiched buffer layers

J. S. Palmer, J. H. Weaver, P. Swaminathan, 2008 .

Reactive metal overlayer formation on high-temperature superconductors at 20 K

T. Ohno, G. Kroll, J. H. Weaver, 1991 .

The Optical Properties of Some Transition-Metals

J. H. Weaver, 1973 .

Optical properties of crystalline tungsten

D. Lynch, J. H. Weaver, C. G. Olson, 1975 .

The optical properties of some alkali metal tungsten bronzes from 0.1 to 38 eV

D. Lynch, J. H. Weaver, C. G. Olson, 1973 .

Analysis of occupied and empty electronic states of C60

J. Martins, J. H. Weaver, N. Troullier, 1991 .

Samarium valence changes and reactive interdiffusion at the Si(111)-Sm interface

G. Margaritondo, J. H. Weaver, P. Perfetti, 1983 .

Summary Abstract: X‐ray photoemission investigation of electron injection and trapping at the gold/polyimide interface

H. Meyer, J. H. Weaver, L. Atanasoska, 1988 .

DIMER CHAIN PATTERNS DURING SUBMONOLAYER GROWTH OF SILICON ON SI(100)

C. Aldao, J. H. Weaver, Y. Gong, 1998 .

Bulk Silicides and Si-Metal Interface Reaction: Pd2Si,

J. H. Weaver, A. Franciosi, 1983 .

Dynamics of polyimide curing and degradation: An in situ x‐ray photoemission study

H. Meyer, J. H. Weaver, L. Atanasoska, 1988 .

Ion sputtering of GaAs(110): From individual bombardment events to multilayer removal

J. H. Weaver, Xue-sen Wang, R. J. Pechman, 1995 .

ELECTRON-STIMULATED MODIFICATION OF SI SURFACES

J. H. Weaver, K. Nakayama, 1999 .

Photoemission and x-ray studies of metal hydrides and hydride formation at metal/hydride interfaces

J. H. Weaver, J. Joyce, R. Butera, 1985 .

Hydrogen diffusion and hydride formation at the metal–hydride interface

J. H. Weaver, A. Franciosi, D. Peterson, 1983 .

Occupied and unoccupied electronic states of solid C70 with comparison to C60

R. Smalley, J. H. Weaver, L. Chibante, 1991 .

Manipulation and writing with Ag nanocrystals on Si(111)-7×7

J. H. Weaver, S. Chey, Lin Huang, 1998 .

Atom Vacancy Lines and Surface Patterning: The Role of Stress for Br-Si(100)-(2×1) at 700 K

E. Graugnard, J. H. Weaver, K. Nakayama, 2003 .

Possible applications of surface electromagnetic waves to measure absorption coefficients

R. J. Bell, R. Alexander, C. A. Ward, 1973 .

Metal nanostructure growth on molecular buffer layers of CO2

J. S. Palmer, J. H. Weaver, P. Waggoner, 2005 .

CO-induced morphology modification in buffer-layer-assisted growth of Pd nanostructures

J. H. Weaver, V. N. Antonov, 2003 .

Solid-State Photoelectron Spectroscopy with Synchrotron Radiation

G. Margaritondo, J. H. Weaver, Giorgio Margaritondo, 1979, Science.

Clusters and Cluster Assembly of Interfaces

T. Ohno, J. H. Weaver, G. D. Waddill, 1990 .

Electron-stimulated desorption from an unexpected source: Internal hot electrons for Br–Si(1 0 0)-(2 × 1)

J. H. Weaver, K. Nakayama, G. J. Xu, 2005 .

Formation of Fullerides and Fullerene-Based Heterostructures

R. Smalley, T. Ohno, G. Kroll, 1991, Science.

CdS by XPS

J. H. Weaver, D. Poirier, 1993 .

Metal/CaF2/Si heterostructures: Interface evolution and electronic properties

F. Xu, J. H. Weaver, M. Vos, 1989 .

Supersonic cluster source with mass selection and energy control

J. H. Weaver, R. Laaksonen, D. Poirier, 1994 .

XPS probes of carbon-caged metals

R. Smalley, J. Alford, T. Ohno, 1992 .

Anomalous two-electron auger resonance in thorium near the 5d(O5) photothreshold

M. Aono, D. Eastman, J. H. Weaver, 1981 .

XPS study of chemical bonding at polyimide interfaces with metal and semiconductor overlayers

H. Meyer, J. H. Weaver, L. Atanasoska, 1990 .

Thermally induced structural and compositional modification of the Cu/Si(111)‐7×7 interface

J. H. Weaver, S. Chambers, 1985 .

Quantitative analysis of synchrotron radiation photoemission core level data

J. H. Weaver, M. D. Giudice, J. Joyce, 1989 .

Influence of metal interlayers on Schottky barrier formation for Au/ZnSe (100) and Al/ZnSe (100)

F. Xu, J. H. Weaver, H. Chèng, 1988 .

Optical investigation of the electronic structure of bulk Rh and Ir

D. Lynch, J. H. Weaver, C. G. Olson, 1977 .

Optical absorption of hcp yttrium

J. H. Weaver, C. G. Olson, 1977 .

Optical properties of single-crystal Be from 0.12 to 4.5 eV

D. Lynch, J. H. Weaver, R. Rosei, 1973 .

Bremsstrahlung isochromat studies of conduction band states in GaSe

Yongli Gao, F. Lévy, G. Margaritondo, 1988 .

Electronic structure of C84 and KxC84: Comparison to C60 and graphite

Y. Achiba, J. H. Weaver, K. Kikuchi, 1993 .

Interaction of O2 with C60: photon-induced oxidation

R. Smalley, T. Ohno, G. Kroll, 1991 .

Ordered Overlayers of C60 on GaAs(110) Studied with Scanning Tunneling Microscopy

R. Smalley, J. H. Weaver, L. Chibante, 1991, Science.

Core-electron excitation edges in metallic Ni, Cu, Pt, and Au

E. Mcrae, J. H. Weaver, R. Dietz, 1980 .

Optical absorption in the4dtransition metals from 20 to 250 eV

J. H. Weaver, C. G. Olson, 1976 .

Optical Properties of Niobium from 0.1 to 36.4 eV

D. Lynch, J. H. Weaver, C. G. Olson, 1973 .

I.R. Lattice-vibration spectra of MnF2

R. Alexander, C. A. Ward, J. H. Weaver, 1974 .

Schottky‐limit barrier heights for CO‐coated metal clusters on GaAs(110)

T. Komeda, J. H. Weaver, F. Stepniak, 1991 .

Strongly bound chemisorption state for benzene on silicon (111)

F. Cerrina, G. Margaritondo, J. H. Weaver, 1983 .

Competition between particle formation and burrowing: Gold on bismuth

J. S. Palmer, J. H. Weaver, P. Swaminathan, 2008 .

Particle aggregation on dewetting solid water films

J. S. Palmer, J. H. Weaver, P. Waggoner, 2008 .

Cluster Assembly of Interfaces: Nanoscale Engineering

J. H. Weaver, G. D. Waddill, 1991, Science.

Self-assembly of multilayer arrays from Ag nanoclusters delivered to Ag(111) by soft landing

J. H. Weaver, S. Chey, Lin Huang, 1998 .

Infrared Absorption of Chromium‐Rich CrFe, CrCo, and CrNi Alloys at 4.2 K

D. Lynch, J. H. Weaver, R. Rosei, 1975 .

Anomalous photoluminescence behavior from amorphous Ge quantum dots produced by buffer-layer-assisted growth

J. S. Palmer, J. H. Weaver, P. Swaminathan, 2007 .

Buffer-Layer-Assisted Growth of Nanocrystals: Ag-Xe-Si(111)

J. H. Weaver, S. Chey, Lin Huang, 1998 .

Modeling homogeneous and heterogeneous metal/semiconductor interface reactions with photoemission and angle-resolved auger spectroscopy

J. H. Weaver, S. Chambers, M. W. Ruckman, 1986 .

Nanostructure diffusion and aggregation on desorbing rare-gas solids: Slip on an incommensurate lattice

J. S. Palmer, J. H. Weaver, A. Bhatti, 2003 .

Electronic structure and bonding in CaH2: Experiment and theory

M. Gupta, J. H. Weaver, D. Peterson, 1984 .

Layer-by-layer etching of GaAs (110) with halogenation and pulsed-laser irradiation

J. H. Weaver, B. Han, C. Cha, 1998 .

Laser interaction with Br-GaAs(110): Etching and atomic desorption

J. H. Weaver, B. Han, 1998 .

Semiconductor/polyimide interface formation: An x-ray photoelectron spectroscopy study of germanium chemical bonding

H. Meyer, J. H. Weaver, L. Atanasoska, 1988 .

Aluminum/polyimide interface formation: An x‐ray photoelectron spectroscopy study of selective chemical bonding

H. Meyer, J. H. Weaver, Zhangda Lin, 1987 .

Silicon–refractory metal interfaces: Evidence of room‐temperature intermixing for Si–Cr

J. H. Weaver, A. Franciosi, D. J. Peterman, 1981 .

Passivation of high Tc superconductor surfaces with CaF2 and Bi, Al, and Si oxides

H. Meyer, J. H. Weaver, D. L. Nelson, 1988 .

Single‐crystal YBa2Cu3O7−x and Bi2Ca1+xSr2−xCu2O8+y surfaces and Ag adatom‐induced modification

H. Meyer, J. H. Weaver, C. Gallo, 1989 .

Titanium‐oxygen reaction at the Ti/La1.85Sr0.15CuO4 interface

H. Meyer, J. H. Weaver, D. M. Hill, 1987 .

Spectroscopic evidence for passivation of the La1.85Sr0.15CuO4 surface with gold

Yongli Gao, H. Meyer, J. H. Weaver, 1987 .

Phonon-activated electron-stimulated desorption of halogens from Si(100)-(2× 1)

J. H. Weaver, A. Agrawal, K. Nakayama, 2006 .

Spontaneous and laser-enhanced halogen etching of GaAs(110)

J. H. Weaver, B. Han, 1998 .

Electronic structure of metal hydrides. VI. Photoemission studies and band theory of VH, NbH, and TaH

J. H. Weaver, D. Misemer, D. Peterson, 1983 .

Electronic structure of the thorium hydrides ThH/sub 2/ and Th/sub 4/H/sub 15/

D. Eastman, C. Satterthwaite, J. H. Weaver, 1977 .

Electronic structure of metal hydrides. II. Band theory of Sc H 2 and Y H 2

J. Marchiando, J. H. Weaver, B. Harmon, 1979 .

Electronic structure and surface oxidation of the haucke compounds CaNi5, YNi5, LaNi5 and ThNi5

K. Gschneidner, J. H. Weaver, A. Franciosi, 1982 .

Electronic structure of metal hydrides. IV. TiH/sub x/, ZrH/sub x/, HfH/sub x/, and the fcc-fct lattice distortion

J. H. Weaver, A. Franciosi, D. Peterson, 1981 .

Electronic structure and surface oxidation of LaNi5, Er6Mn23, and related systems

J. H. Weaver, W. Wallace, A. Franciosi, 1980 .

Photoemission studies of mixed valency:Ce(Ag0.3Pd0.7)3, CePd3, and CeRh3

M. Croft, J. H. Weaver, D. J. Peterman, 1982 .

Electronic Structure of Metal Hydrides: A Review of Experimental and Theoretical Progress

J. H. Weaver, D. Peterson, D. J. Peterman, 1983 .

Electronic structure of metal hydrides. I. Optical studies of ScH 2 , YH 2 , and LuH 2

J. H. Weaver, R. Rosei, D. Peterson, 1979 .

Electronic structure studies of metal hydrides

J. H. Weaver, D. Peterson, 1980 .

The influence of hydrogen on the bulk band structure of Nb and Ta: An optical study of NbH0.453 and TaH0.257

J. H. Weaver, D. Peterson, 1977 .

Optical and photoemission studies of lanthanum hydrides

J. H. Weaver, D. Peterson, D. J. Peterman, 1980 .

Photoelectron Spectroscopy of Metal Dihydrides

J. H. Weaver, D. Peterson, 1979 .

Optical interband structure and the low energy plasmon in ScH2

J. H. Weaver, R. Rosei, D. Peterson, 1978 .

DOE A9024 Final Report Functional and Nanoscale Materials Systems: Frontier Programs of Science at the Frederick Seitz Materials Research Laboratory

I. Robinson, I. Petrov, J. H. Weaver, 2009 .

Chapter 66 Photoemission of Ce and its compounds

D. Lynch, J. H. Weaver, 1987 .

4f localization in cerium compounds

J. H. Weaver, 1983 .

Photon polarisation effects in angle-integrated photoemission spectroscopy: a simple experimental geometry

G. Margaritondo, J. H. Weaver, N. Stoffel, 1979 .

Uranium Stabilization of C28: A Tetravalent Fullerene

R. Smalley, G. Scuseria, T. Ohno, 1992, Science.

The influence of intershell interaction on the 3d and 5d branching ratio of Cu and Au

J. H. Weaver, B. Sonntag, R. Bruhn, 1980 .

Inverse photoemission and resonant photoemission characterization of semimagnetic semiconductors

Yongli Gao, J. Dow, J. H. Weaver, 1989 .

Low-energy interband absorption in bcc Fe and hcp Co

D. Lynch, J. H. Weaver, R. Rosei, 1979 .

Samarium chemisorption on group-IV semiconductors

G. Margaritondo, J. H. Weaver, P. Perfetti, 1984 .

Bonding in metal disilicides CaSi2 through NiSi2: Experiment and theory

J. H. Weaver, V. Moruzzi, A. Franciosi, 1984 .

PARTICLE-SIZE-INDUCED VALENCE CHANGES IN SAMARIUM CLUSTERS

D. A. Shirley, Shui-Tong Lee, R. Davis, 1981 .

Experimental and theoretical band-structure studies of refractory metal silicides

J. H. Weaver, V. Moruzzi, F. Schmidt, 1981 .

Electronic structure of Cr Silicides and Si-Cr interface reactions

C. Calandra, O. Bisi, J. H. Weaver, 1983 .

Reaction and stability of metal/silicide interfaces: Ti/MoSi2 (001)

T. Hirano, T. Komeda, J. Sullivan, 1990 .

Si-Cr and Si-Pd interface reaction and bulk electronic structure of Ti, V, Cr, Co, Ni, and Pd silicides

J. H. Weaver, A. Franciosi, 1983 .

Si-Metal interface reaction and bulk electronic structure of silicides☆

J. H. Weaver, A. Franciosi, 1983 .

Electronic structure of nickel silicidesNi2Si, NiSi, and NiSi2

J. H. Weaver, A. Franciosi, F. Schmidt, 1982 .

Chemical bonding at the Si–metal interface: Si–Ni and Si–Cr

Y. Chabal, J. Poate, C. Calandra, 1982 .

Structural morphology and electronic properties of the Si-Cr interface

J. H. Weaver, V. Moruzzi, A. Franciosi, 1982 .

Ionic Contribution to Silicon-Metal Bonding: Si(111)-Ca Interface Reactions

J. H. Weaver, A. Franciosi, 1985 .

Abruptness of Au‐Si contacts with thin CoSi2 interlayers

C. Aldao, F. Xu, J. H. Weaver, 1987 .

Temperature Dependent Intermixing At The V/Ge(111) Interface

J. H. Weaver, M. W. Ruckman, M. D. Giudice, 1985 .

Metal‐Semiconductor Interfaces

J. H. Weaver, 1986 .

Halogen etching of Si(100)-2×1: Dependence on surface concentration

C. Aldao, J. H. Weaver, K. Nakayama, 1999 .

C60 matrix-isolated in Xe: plasmon shifts and polarization effects☆

R. Smalley, T. Ohno, G. Kroll, 1993 .

Ni/YBa sub 2 Cu sub 3 O sub 7 minus sub x and Ni/Bi sub 2 Sr sub 2 Ca sub 0. 8 Y sub 0. 2 Cu sub 2 O sub x interface formation: Reactivity, segregation, and chemical trapping

U. Balachandran, H. Meyer, J. H. Weaver, 1991 .

Silicon interfaces with high temperature superconductors

N. Spencer, H. Meyer, J. H. Weaver, 1990 .

Surface reactivity and interface morphology for Ti growth on YBa2Cu3O7−x, Y2BaCuO5, and CuO

H. Meyer, J. H. Weaver, K. Goretta, 1990 .

Ba oxides: Core level binding energies and defect-related Fermi level pinning

H. Meyer, J. H. Weaver, D. M. Hill, 1990 .

Photoemission, inverse photoemission, and ab initio SCF investigations of the electronic structure of polyimide

J. Almlöf, H. Meyer, J. H. Weaver, 1989 .

Reactivity and passivation for Bi adatoms on YBa2Cu3O6.9 and Bi2Ca1+xSr2−xCu2O8+y

H. Meyer, J. H. Weaver, K. Goretta, 1988 .

High-energy auger and medium-energy backscattered electron diffraction as a probe of ultra-thin epitaxial overlayers, sandwiches and superlattices

J. H. Weaver, S. Chambers, I. Vitomirov, 1987 .

Evidence of 4f photoemission satellites in cerium compounds

M. Croft, J. H. Weaver, N. Mårtensson, 1981 .

Mixed valence and 4f surface chemical shift in CeN

J. H. Weaver, W. Gudat, E. Kaldis, 1982 .

Surface binding energy shifts, mixed valence and localization of 4f electrons: Ce vs. Sm (invited)

J. H. Weaver, W. Gudat, E. Kaldis, 1981 .

Fundamental Parameters and Mechanisms in the Ce Problem: Photoemission Results on CeAl 2 and CeAl 2 Alloys

M. Croft, J. H. Weaver, A. Franciosi, 1981 .

Ge on Bi2Sr2−xCa1+xCu2O8+y: Reduced reactivity through cluster assembly

T. Ohno, J. H. Weaver, Y. Kimachi, 1990 .

Surface and interface properties of high temperature superconductors

H. Meyer, J. H. Weaver, D. M. Hill, 1989 .

Overlayer Formation on High-Temperature Superconductors

J. H. Weaver, 1994 .

High-temperature superconductors - Occupied and unoccupied electronic states, surface stability, and interface formation

Yongli Gao, H. Meyer, J. H. Weaver, 1987 .

Electron-Stimulated Modification of Si Surfaces

J. H. Weaver, K. Nakayama, 1999 .

3. Photoemission Spectroscopy of Valence States

G. Margaritondo, J. H. Weaver, 1985 .

Photoemission studies of the gamma-alpha phase transition in Ce: Changes in 4f character

D. Lynch, J. H. Weaver, D. Wieliczka, 1982 .

Formation and Properties of Metal—Semiconductor Interfaces

J. H. Weaver, 1991 .

Germanium growth on Br-terminated Si(1 0 0)

J. H. Weaver, G. J. Xu, B. R. Trenhaile, 2006 .

Induced magnetism in Cu nanoparticles embedded in Co

J. S. Palmer, R. Rosenberg, J. H. Weaver, 2007 .

Angle-resolved photoemission studies of TiC(111) and TiC(100)

F. Himpsel, J. V. D. Veen, D. Eastman, 1980 .

Infrared and visible optical properties of single crystal Ni at 4K

D. Lynch, J. H. Weaver, R. Rosei, 1971 .

Temperature modulation of the optical transitions involving the Fermi surface in Ag: Experimental

J. H. Weaver, R. Rosei, Charles H. Culp, 1974 .

Electronic structure of metal hydrides. V. x-dependent properties of LaH/sub x/ (1. 9< or =x< or =2. 9) and NdH/sub x/ (2. 01< or =x< or =2. 27)

J. H. Weaver, D. Peterson, D. J. Peterman, 1981 .

Halogen chemisorption, the pairwise diffusion of I, and trapping by defects on Si(1 0 0)

J. H. Weaver, A. Agrawal, K. Nakayama, 2005 .

Halogen etching of Si via atomic-scale processes

C. Aldao, J. H. Weaver, 2001 .

Use of angle‐dependent photoemission for atom profiling: Au on compound semiconductors

F. Xu, Y. Shapira, J. H. Weaver, 1987 .

Ti overlayer growth on oxidized GaAs(110) versus Ti oxidation on physisorbed O2 on GaAs(110) at 25 K

J. H. Weaver, J. Seo, Y. Z. Li, 1991 .

Production of highly oxidized As on GaAs (110) at 20 K

T. Komeda, C. Capasso, J. H. Weaver, 1990 .

Quantitative interdiffusion studies of noble metal/Si(111)‐7×7 interfaces by angle‐resolved Auger electron emission

G. A. Howell, J. H. Weaver, S. Chambers, 1985 .

Electronic structure of TiC and NbC: A photoelectron spectroscopy study

J. H. Weaver, F. Schmidt, 1980 .

Optical properties of TiCx (0.64≤x≤0.90) from 0.1 to 30 eV

D. Lynch, J. H. Weaver, C. G. Olson, 1980 .

Thermoreflectance of Mo from 0.5 to 35 eV

D. Lynch, J. H. Weaver, C. G. Olson, 1975 .

Order and Disorder in C60 and KxC60 Multilayers: Direct Imaging with Scanning Tunneling Microscopy

R. Smalley, J. H. Weaver, L. Chibante, 1991, Science.

Solid State Properties of Fullerenes and Fullerene-Based Materials

J. H. Weaver, D. Poirier, 1995 .

Carbon (as Graphite, Buckminsterfullerene, and Diamond) by XPS

J. H. Weaver, D. Poirier, 1993 .

Surface modification without desorption: recycling of Cl on Si(100)-(2 x 1).

E. Graugnard, J. H. Weaver, K. Nakayama, 2002, Physical review letters.

Formation of Br-terminated Si6 rings during etching of Si(111)-7 × 7

J. H. Weaver, R. J. Pechman, G. Khoo, 1995 .

Step free energies, surface stress, and adsorbate interactions for Cl-Si(100) at 700 K

C. Aldao, J. H. Weaver, S. Khare, 2003 .

Size dependence of nanoparticle dissolution in a matrix: Gold in bismuth

J. S. Palmer, J. H. Weaver, P. Swaminathan, 2009 .

Sm/GaAs(110) interface formation: Surface instabilities and kinetic constraints

M. Schabel, T. Komeda, J. H. Weaver, 1991 .

3p-3d intershell interaction in Cr

J. H. Weaver, B. Sonntag, J. Barth, 1980 .

Ce 4f electron in CeH 2.1 , CeH 2.4 , CeAl 2 , CePd 3 , CeRh 3 , and CeRu 2 : A photoemission study using synchrotron radiation

M. Croft, J. H. Weaver, D. Peterson, 1983 .

Buffer-layer-assisted nanostructure growth via two-dimensional cluster-cluster aggregation

J. H. Weaver, C. Haley, 2002 .

Nanoparticle diffusion on desorbing solids: The role of elementary excitations in buffer-layer-assisted growth

J. S. Palmer, J. H. Weaver, A. Bhatti, 2004 .

Synthesis and patterning of nanostructures of (almost) anything on anything

J. H. Weaver, V. N. Antonov, 2004 .

Electronic structures of C60, C70 and the fullerides: Photoemission and inverse photoemission studies

J. H. Weaver, 1992 .

Final Report: Nanoscale Cluster Assembly on Compliant Substrates: A New Route to Epitaxy and Nanosctructure Synthesis

J. H. Weaver, 2006 .

A direct comparison between gas-phase and solid-state Hg 5d photoionization processes

G. Margaritondo, J. H. Weaver, R. Rosei, 1980 .

Ag Multilayer island growth on Br-Si(0 0 1)-(2 × 1) and Ag-induced nano-pitting

J. H. Weaver, K. Nakayama, 2005 .

Low-Energy Optical Absorption in ReO3

D. Lynch, J. H. Weaver, 1972 .

Effects of annealing on the surface morphology of decapped GaAs(001)

L. Florez, J. H. Weaver, C. J. Palmstro, 1992 .

Dramatic work function variations of molecular‐beam epitaxially grown GaAs(100) surfaces

L. Florez, J. H. Weaver, C. J. Palmstro, 1992 .

Photoelectron attenuation lengths and thermal broadening in GaAs(110)

M. Schabel, J. H. Weaver, G. D. Waddill, 1991 .

Surface structural determination of metal-semiconductor interfaces by angle-resolved Auger electron emission

J. H. Weaver, S. Chambers, S. B. Anderson, 1986 .

Interface catalytic effect: Cr at the Si(111)-Au interface

J. H. Weaver, A. Franciosi, D. G. O’Neill, 1983 .

Modulation of atomic interdiffusion at the Si(111)–Au interface

J. H. Weaver, A. Franciosi, D. G. O’Neill, 1983 .

Silicide Based Interfaces : 0 , Synchrotrou Radiation Photoemission and Inverse Photoemission Investigations oD of Interface Formation and Compound Nucleation 00 0 ) FINAL REPORT

J. H. Weaver, 2022 .

Cluster-induced reactions at a metal-semiconductor interface: Ce on Si(111)

J. H. Weaver, S. Chambers, M. Grioni, 1984 .

SYNCHROTRON RADIATION PHOTOEMISSION-STUDIES ON THE PALLADIUM COMPOUND SEMICONDUCTOR INTERFACES - VALENCE BAND STUDIES

Yongli Gao, J. H. Weaver, Zhangda Lin, 1992 .

Solid-state dewetting-mediated aggregation of nanoparticles

J. S. Palmer, J. H. Weaver, P. Swaminathan, 2008 .

Inverse photoemission spectrometer for interface studies

Yongli Gao, J. H. Weaver, M. Grioni, 1988 .

Reaction and intermixing at metal‐superconductor interfaces: Fe/YBa2Cu3O6.9

Yongli Gao, J. H. Weaver, D. Capone, 1987 .

Photoemission and inverse photoemission studies of La adatom interactions with YBa2Cu3O6.9

Yongli Gao, C. Aldao, J. H. Weaver, 1988 .

Temperature‐dependent interface morphology and Schottky barrier evolution for Au/InP(110)

Yongli Gao, C. Aldao, J. H. Weaver, 1989 .

Interface formation by atom and cluster deposition: Novel electronic and structural properties

C. Aldao, J. H. Weaver, G. D. Waddill, 1989 .

Interface growth with atoms and preformed clusters: Morphology and Schottky barrier variations for Au/InP(110)

C. Aldao, J. H. Weaver, G. D. Waddill, 1988 .

Dynamics of Surface Roughening of Cl-Terminated Si(100)-(2×1) at 700 K

E. Graugnard, J. H. Weaver, K. Nakayama, 2003 .

Structure determination of the(3×3)R30°boron phase on the Si(111) surface using photoelectron diffraction

D. P. Woodruff, E. Rotenberg, K. Horn, 1999 .

Oxygen atoms on Si(100)-(2×1): Imaging with scanning tunneling microscopy

J. H. Weaver, A. Agrawal, B. R. Trenhaile, 2006 .

Crossover energetics for halogenated Si(100): Vacancy line defects, dimer vacancy lines, and atom vacancy lines

J. H. Weaver, A. Agrawal, Duane D. Johnson, 2005 .

Si epitaxial growth on Br-Si(100): How steric repulsive interactions influence overlayer development

J. H. Weaver, G. Xu, 2004 .

Equilibrium morphologies for Cl-roughened Si(100) at 700-750 K: Dependence on Cl concentration

C. Aldao, J. H. Weaver, K. Nakayama, 2003 .

Tunneling electron induced bromine hopping on Si(100)-(2 x 1).

E. Graugnard, J. H. Weaver, K. Nakayama, 2002, Physical review letters.

Chemical fingerprinting at the atomic level with scanning tunneling spectroscopy

J. H. Weaver, K. Ohmori, K. Nakayama, 2006 .

Monte Carlo modeling of Si(1 0 0) roughening due to adsorbate-adsorbate repulsion

C. Aldao, J. H. Weaver, K. Nakayama, 2004 .

Metastable structures and critical thicknesses: Ag on Si(111)-7×7

J. H. Weaver, S. Chey, Lin Huang, 1998 .

Reaction at a refractory metal/semiconductor interface: V/GaAs(110)

J. H. Weaver, M. Grioni, J. Joyce, 1985 .

Cluster-Assembled Interfaces

C. Aldao, J. H. Weaver, I. Vitomirov, 1993 .

Empty electronic states of epitaxial Bi overlayers on InP(110): Effects of surface relaxation

J. H. Weaver, D. Poirier, M. Jost, 1991 .

Si ( 100 ) - ( 2 × 1 ) Etching with Fluorine: Planar Removal versus Three Dimensional Pitting

J. H. Weaver, K. Nakayama, 1999 .

ハロゲンによるSi(100)-2×1表面のエッチング

C. Aldao, J. H. Weaver, 幸仁中山, 2000 .

Surface morphologies of Br-etched Ge/Si(001)

J. H. Weaver, Y. Gong, S. Chey, 1998 .

Coverage-dependent chemisorption of Cl on Si(114)

J. H. Weaver, A. Agrawal, R. Butera, 2008 .

Atomic processes during Cl supersaturation etching of Si(100)-(2Xl)

C. Aldao, J. H. Weaver, A. Agrawal, 2009 .

Systematics of electronic structure and local bonding for metal/GaAs(110) interfaces

J. H. Weaver, M. W. Ruckman, M. Grioni, 1987 .

A Method of Wind-Tunnel Testing Through the Transonic Range

J. H. Weaver, 1948 .

Optical properties of Rh, Pd, Ir, and Pt

J. H. Weaver, 1975 .

Infrared absorption of small silicon particles with oxide overlayers

R. J. Bell, R. Alexander, J. H. Weaver, 1973 .

Density-of-States Changes near the Fermi Level and the Lattice Instability in Tise2

F. Lévy, G. Margaritondo, C. M. Bertoni, 1981 .

X‐ray photoemission investigations of clustering and electron emission, injection, and trapping at the gold/polyimide interface

H. Meyer, J. H. Weaver, L. Atanasoska, 1988 .

KxC60: Nonequilibrium thin film growth and spectroscopic results

J. H. Weaver, P. Benning, D. Poirier, 1992 .

Electronic structure of cubic gallium nitride films grown on GaAs

Hui Yang, K. Horn, O. Brandt, 1996 .

High‐resolution electron energy loss spectroscopy as a probe of surface morphology and electronic states at metal/semiconductor interfaces

J. H. Weaver, G. Lapeyre, S. Chambers, 1986 .

Schottky barrier contacts on defect‐free GaAs (110)

Z. Liliental-Weber, E. Weber, J. H. Weaver, 1990 .

The effects of buffer structure in buffer-layer-assisted growth: Grain boundaries, grooves, and pattern transfer

J. S. Palmer, J. H. Weaver, P. Swaminathan, 2005 .

Trends in surface roughening: analysis of ion-sputtered GaAs(110)

J. H. Weaver, R. J. Pechman, Xiangrong Wang, 1996 .

KxC60 Structural evolution: Scanning tunneling microscopy and low energy electron diffraction

J. H. Weaver, D. Poirier, Y. Zhao, 1993 .

The Physics of Semiconductors: An Introduction Including Devices and Nanophysics

J. H. Weaver, 2007 .

Study of the iron borides. IV. Relation of bonding to structure and magnetic behavior from photoemission experiments andab initiocalculations

D. Bullett, J. H. Weaver, D. Hercules, 1981 .

The Electronic Nature of the Metal-Metal Quadruple Bond: Variable Photon Energy Photoelectron Spectroscopy of Mo2(O2CCH3)4

D. Lichtenberger, J. H. Weaver, Charles D. Ray, 1992 .

Low-energy interband absorption in Pd

J. H. Weaver, R. Benbow, 1975 .

Oxide films grown on GaAs(110) at 20 K: Stability during Cr overlayer formation

J. H. Weaver, J. Seo, Y. Chen, 1991 .

Summary Abstract: Reaction and epitaxy at the Co/Si(111) interface

J. H. Weaver, S. Chambers, M. W. Ruckman, 1987 .

C60 and C70 fullerenes and potassium fullerides.

Chen, Weaver, Jost, 1992, Physical review. B, Condensed matter.

C60 bonding and energy-level alignment on metal and semiconductor surfaces.

Chen, Weaver, Kroll, 1991, Physical review. B, Condensed matter.

Nondisruptive oxide overlayer growth on GaAs(110)

T. Ohno, G. Kroll, J. H. Weaver, 1991 .

Photoluminescence of CdSe quantum dots and rods from buffer-layer-assisted growth

J. S. Palmer, J. H. Weaver, P. Swaminathan, 2006 .

Optical properties of Ti, Zr, and Hf from 0.15 to 30 eV

D. Lynch, J. H. Weaver, C. G. Olson, 1975 .

Far infrared (FIR) spectra of polynary chalcogenide glasses

D. Day, J. H. Weaver, E. Amrhein, 1974 .

A 20–350 K variable‐temperature sample holder with sample interchangeability

C. Aldao, J. H. Weaver, G. D. Waddill, 1990 .

Electronic structure of metal hydrides. III. Photoelectron spectroscopy studies of ScH/sub 2/, YH/sub 2/, and LuH/sub 2/

J. H. Weaver, D. Peterson, R. Benbow, 1979 .