H. Hongo

发表

Feasibility Study of Modified Single-Particle Model for Composite Cathode at High-Rate Discharge

I. Goto, Hirokazu Ohkuma, H. Hongo, 2016 .

Horizontally directional single-wall carbon nanotubes grown by chemical vapor deposition with a local electric field

Yukinori Ochiai, Fumiyuki Nihey, Hiroo Hongo, 2007 .

High performance carbon-nanotube field-effect transistors

H. Hongo, M. Yudasaka, S. Iijima, 2003, Digest of Papers Microprocesses and Nanotechnology 2003. 2003 International Microprocesses and Nanotechnology Conference.

A Top-Gate Carbon-Nanotube Field-Effect Transistor with a Titanium-Dioxide Insulator

M. Yudasaka, S. Iijima, H. Hongo, 2002 .

Chemical vapor deposition of single-wall carbon nanotubes on iron-film-coated sapphire substrates

T. Ichihashi, M. Yudasaka, S. Iijima, 2002 .

Support materials based on converted aluminum films for chemical vapor deposition growth of single-wall carbon nanotubes

T. Ichihashi, M. Yudasaka, S. Iijima, 2003 .

Formation of Sm-Co Intermetallic Compound Nanoparticles Based on Plasma-Induced Cathodic Discharge Electrolysis in Chloride Melt

H. Hongo, M. Tokushige, T. Nishikiori, 2011 .

Relationship between carbon nanotube density and hysteresis characteristics of carbon nanotube random network-channel field effect transistors

H. Hongo, S. Yorozu, F. Nihey, 2010 .

Transport properties of single-wall carbon nanotubes with encapsulated C60

T. Ichihashi, M. Yudasaka, S. Iijima, 2002 .

25 nm pitch GaInAs/InP buried structure: Improvement by calixarene as an electron beam resist and tertiarybutylphosphine as a P source in organometallic vapor phase epitaxy regrowth

T. Hattori, M. Suhara, Y. Miyamoto, 1998 .

Influence of a finite energy width on the hot electron double-slit interference experiment: A design of the emitter structure

Y. Miyamoto, K. Furuya, H. Hongo, 1997 .

A 40-NM-PITCH DOUBLE-SLIT EXPERIMENT OF HOT ELECTRONS IN A SEMICONDUCTOR UNDER A MAGNETIC FIELD

M. Suhara, Y. Miyamoto, K. Furuya, 1997 .

Ultrafine Fabrication Technique for Hot Electron Interference/Diffraction Devices

Y. Miyamoto, K. Furuya, H. Hongo, 1994 .

Sub-micron GaInAs/InP hot electron transistors by EBL process and size dependence of current gain

T. Hattori, Y. Miyamoto, K. Furuya, 1998 .

Wrapped Alignment Marks for Fabrication of Interference/Diffraction Hot Electron Devices.

M. Suhara, Y. Miyamoto, K. Furuya, 1998 .

Hot electron interference by 40 nm-pitch double slit buried in semiconductor

Y. Miyamoto, K. Furuya, H. Hongo, 1997 .

Electrical properties of 100 nm pitch Cr/Au fine electrodes with 40 nm width on GaInAs toward hot electron interference/diffraction devices

Y. Miyamoto, K. Furuya, H. Hongo, 1997 .

Seventy-nm-Pitch Patterning on CaF_2 by e-beam Exposure

T. Hattori, M. Asada, Y. Miyamoto, 1996 .

Electrical Properties of 100 nm Pitch Cr/Au Fine Electrodes with 40 nm Width on GaInAs.

Y. Miyamoto, K. Furuya, H. Hongo, 1996 .

Nanostructure Alignment for Hot Electron Interference/Diffraction Devices.

M. Suhara, Y. Miyamoto, K. Furuya, 1995 .

GaInAs/InP organometallic vapor phase epitaxy regrowth for ultrafine buried heterostructures with 50 nm pitch toward electron wave devices

M. Suhara, Y. Miyamoto, K. Furuya, 1994 .

A 25-nm-pitch GaInAs/InP Buried Structure Using Calixarene Resist

T. Hattori, Y. Miyamoto, K. Furuya, 1998 .

Diameter-Controlled Carbon Nanotubes Grown from Lithographically Defined Nanoparticles

H. Hongo, Y. Ochiai, F. Nihey, 2004 .

Intrinsic performance of carbon-nanotube transistors

M. Yudasaka, S. Iijima, H. Hongo, 2004, Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004..

Resistance Evaluation and Growth of Carbon Nanotubes

Masahiko Ishida, Yukinori Ochiai, Fumiyuki Nihey, 2006 .