Sulagna Chatterjee

发表

Modeling and control of microelectronics materials processing

Thomas F. Edgar, Isaac Trachtenberg, Thomas A. Badgwell, 1995 .

Fraction of Insertion of the Channel Fin as Performance Booster in Strain-Engineered p-FinFET Devices With Insulator-on-Silicon Substrate

S. Chattopadhyay, Sulagna Chatterjee, 2018, IEEE Transactions on Electron Devices.

Modeling and estimation of process-induced stress in the nanowire field-effect-transistors (NW-FETs) on Insulator-on-Silicon substrates with high-k gate-dielectrics

S. Chattopadhyay, Sulagna Chatterjee, 2016 .

Strain-Engineered Asymmetrical Superlattice Si/Si1–xGex Nano-ATT $\langle$ p++-n-n−-n++ $\rangle$ Oscillator: Enhanced Photo-Sensitivity in Terahertz Domain

Sulagna Chatterjee, M. Mukherjee, 2019, IEEE Transactions on Electron Devices.

Direct band gap silicon nanowire avalanche transit time thz opto-electronic sensor with strain-engineering

Sulagna Chatterjee, M. Mukherjee, 2020, Optical and Quantum Electronics.

Process-induced-strain maximization of nano-scale silicon-on-sapphire high-k gate-dielectric MOSFETs by adjusting device aspect ratio

Sulagna Chatterjee, 2014, 2014 IEEE 2nd International Conference on Emerging Electronics (ICEE).

Analytical modeling of the lattice and thermo-elastic coefficient mismatch-induced stress into silicon nanowires horizontally embedded on insulator-on-silicon substrates

S. Chattopadhyay, Sulagna Chatterjee, 2017 .

THz Medical Imaging: Current Status and Future Outlook

Sulagna Chatterjee, Munia Mukherjee, Sulagna Chatterjee, 2020 .

Hybrid Multi-Graphene/Si Avalanche Transit Time Terahertz Power Oscillator: Theoretical Reliability and Experimental Feasibility Studies

D. Chakraborty, Sulagna Chatterjee, M. Mukherjee, 2020, IEEE Transactions on Device and Materials Reliability.

Estimation of step-by-step induced stress in a sequential process integration of nano-scale SOS MOSFETs with high-k gate dielectrics

S. Chattopadhyay, Sulagna Chatterjee, B. N. Chowdhury, 2013 .

Band-engineered quasi-AlGaN/GaN high-electron-mobility-avalanche-transit-time (HEMATT) oscillator: electro-optical interaction study in sub-mm frequency domain

Sulagna Chatterjee, M. Mukherjee, 2022, The European Physical Journal Plus.

Investigation of the performance of strain-engineered silicon nanowire field effect transistors (ɛ-Si-NWFET) on IOS substrates

S. Chattopadhyay, Sulagna Chatterjee, Subhrajit Sikdar, 2019, Journal of Applied Physics.

Study of droplet generation in an E-shaped microchannel using two-phase level-set method

Sulagna Chatterjee, Liana Chatterjee, 2022, bioRxiv.

Numerical analysis of non-isothermal viscous jet with peripheral heat transfer

Sulagna Chatterjee, Trisha Sen, Anindya Mitra, 2016, Int. J. Model. Simul. Sci. Comput..

Electrical Characterization in Ultra-Wide Band Gap III-Nitride Heterostructure IMPATT/HEMATT Diodes: A Room-Temperature Sub-Millimeter Wave Power Source

Sulagna Chatterjee, M. Mukherjee, 2022, Journal of Electronic Materials.

Strained Si/Si1−yCy superlattice based quasi-read avalanche transit-time devices for terahertz ultrafast switches

Sulagna Chatterjee, M. Mukherjee, 2021, Applied Physics A.

Process-induced strain engineering in the silicon-on-sapphire (SOS) fin field effect transistor (FinFET) channels

S. Chattopadhyay, A. Bhattacharyya, Sulagna Chatterjee, 2015, 2015 6th International Conference on Computers and Devices for Communication (CODEC).

Prediction of Step Coverage during Blanket CVD Tungsten Deposition in Cylindrical Pores

Sulagna Chatterjee, C. Mcconica, 1990 .