G. F. Vitale

发表

Reverse bias instabilities in bipolar power transistors with cellular layout

L. Fratelli, G. Busatto, G. F. Vitale, 2001 .

Instabilities in modern bipolar transistors during the turn-off under inductive loads

L. Fratelli, G. Busatto, G. F. Vitale, 1995, Proceedings of International Conference on Microelectronics.

Analysis of second breakdown limits in RBSOA of bipolar transistors

Paolo Spirito, L. Fratelli, G. Busatto, 2002 .

Performance analysis of a Bipolar Mode JFET (BMFET) with normally off characteristics

Paolo Spirito, G. Busatto, G. F. Vitale, 1986 .

An analysis of the dynamic behavior of switching circuits using avalanche transistors

P. Spirito, G. F. Vitale, P. Spirito, 1972 .

A quasi-one-dimensional analysis of vertical JFET devices operated in the bipolar mode

Paolo Spirito, G. F. Vitale, A. Caruso, 1983 .

All-optical multiwavelength technique for the simultaneous measurement of bulk recombination lifetimes and front/rear surface recombination velocity in single crystal silicon samples

Andrea Irace, Luigi Sirleto, Luigi Zeni, 2003 .

Negative resistance induced by avalanche injection in bulk semiconductors

Paolo Spirito, G. F. Vitale, A. Caruso, 1974 .

New semiconductor active device: the conductivity-controlled transistor

Paolo Spirito, G. F. Vitale, A. Caruso, 1979 .

The effects of carrier accumulation at the cathode on the negative resistance induced by avalanche injection in Si bulk devices

G. F. Vitale, 1975 .

Transverse probe optical lifetime measurement as a tool for in-line characterization of the fabrication process of a silicon solar cell

Andrea Irace, Luigi Sirleto, Luigi Zeni, 1999 .

On the reverse bias safe operating area of power bipolar transistors during inductive turn-off

L. Fratelli, G. F. Vitale, L. Fratelli, 1994 .

An optical technique to measure the bulk lifetime and the surface recombination velocity in silicon samples based on a laser diode probe system

Luigi Zeni, Antonello Cutolo, Annunziata Sanseverino, 1998 .