Leonard C. Feldman

发表

Interaction of high-power infrared radiation with germanium

Dongmin Seo, Norman H. Tolk, Leonard C. Feldman, 2008, Laser Damage.

Second harmonic generation from centrosymmetric arrays of gold nanoparticles

Matthew D. McMahon, Rene Lopez, Leonard C. Feldman, 2006, SPIE LASE.

Comprehensive characterization of copper indium disulfide thin film

Joel C. Keay, Leonard C. Feldman, Akira Ueda, 1999, Optics & Photonics.

Optical nonlinearities and the ultrafast phase transition of VO2 nanoparticles and thin films

Richard F. Haglund, Rene Lopez, Leonard C. Feldman, 2006, SPIE OPTO.

Fabricating arrays of vanadium dioxide nanodisks by focused ion-beam lithography and pulsed-laser deposition

Richard F. Haglund, Rene Lopez, Leonard C. Feldman, 2004, SPIE LASE.

Rutherford Scattering-Channeling Analysis Of Semiconductor Structures

Leonard C. Feldman, 1984, Other Conferences.

The Effects of Nitrogen on the Interface State Density Near the Conduction Band Edge in 4H and 6H-SiC

J. R. Williams, Leonard C. Feldman, Robert A. Weller, 2000 .

Electron microscopy of the ordered boron 2 × 1 structure buried in crystalline silicon

Randall L. Headrick, Leonard C. Feldman, D. J. Eaglesham, 1995 .

SiO2 film thickness metrology by x-ray photoelectron spectroscopy

Robert M. Wallace, Leonard C. Feldman, Glen D. Wilk, 1997 .

Molecular beam deposition of high quality silicon oxide dielectric films

Naresh Chand, J. W. Osenbach, Leonard C. Feldman, 1995 .

Extremely high electron mobility in Si/GexSi1−x structures grown by molecular beam epitaxy

Don Monroe, Leonard C. Feldman, Eugene A. Fitzgerald, 1991 .

DEPTH PROFILES OF THE LATTICE DISORDER RESULTING FROM ION BOMBARDMENT OF SILICON SINGLE CRYSTALS.

Leonard C. Feldman, L. Feldman, J. W. Rodgers, 1970 .

Modulated optical transmission of subwavelength hole arrays in metal-VO2 films

Richard F. Haglund, Rene Lopez, Leonard C. Feldman, 2006 .

Nitrogen content of oxynitride films on Si(100)

Leonard C. Feldman, D. Brasen, Ian V. Mitchell, 1994 .

Modulation of the gold particle-plasmon resonance by the metal-semiconductor transition of vanadium dioxide

Davon W. Ferrara, Richard F. Haglund, Leonard C. Feldman, 2008 .

Si(100)‐(2×1)boron reconstruction: Self‐limiting monolayer doping

Randall L. Headrick, Leonard C. Feldman, D. J. Eaglesham, 1990 .

Fundamentals of Surface and Thin Film Analysis

Leonard C. Feldman, M. Grasserbauer, James W. Mayer, 1986 .

EFFECT OF INCORPORATED NITROGEN ON THE KINETICS OF THIN RAPID THERMAL N2O OXIDES

Leonard C. Feldman, D. Brasen, Martin L. Green, 1995 .

Rapid thermal oxidation of silicon in N2O between 800 and 1200 °C: Incorporated nitrogen and interfacial roughness

Leonard C. Feldman, D. Brasen, Martin L. Green, 1994 .

Optical properties of subwavelength hole arrays in vanadium dioxide thin films

Richard F. Haglund, Rene Lopez, Leonard C. Feldman, 2006 .

Modified Deal Grove model for the thermal oxidation of silicon carbide

Leonard C. Feldman, S. Dhar, L. Feldman, 2004 .

Kinetics of NO nitridation in SiO2/4H–SiC

Leonard C. Feldman, Robert A. Weller, Chin-Che Tin, 2003 .

Wide-spectrum, ultrasensitive fluidic sensors with amplification from both fluidic circuits and metal oxide semiconductor field effect transistors

Deyu Li, Yuejun Kang, Leonard C. Feldman, 2007 .

Nanoscale heterogeneities in a fractured alkali-activated slag binder: A helium ion microscopy analysis

Leonard C. Feldman, Jeffrey P. Fitts, L. Feldman, 2016 .

Optical nonlinearities in VO2 nanoparticles and thin films

Richard F. Haglund, Rene Lopez, Leonard C. Feldman, 2004 .

Electron capture and emission properties of interface states in thermally oxidized and NO-annealed SiO2/4H-SiC

J. R. Williams, Leonard C. Feldman, X. D. Chen, 2008 .

Density of interface states, electron traps, and hole traps as a function of the nitrogen density in SiO2 on SiC

J. R. Williams, Leonard C. Feldman, John Rozen, 2009 .

Accurate thickness/density measurements of organic light-emitting diodes

Leonard C. Feldman, Robert A. Weller, Howard W. H. Lee, 1998 .

Commensurate and incommensurate structures in molecular beam epitaxially grown GexSi1−xfilms on Si(100)

John C. Bean, Ian K. Robinson, Leonard C. Feldman, 1984 .

Epitaxial growth of alkaline earth fluorides on semiconductors

Leonard C. Feldman, Julia M. Phillips, J. M. Gibson, 1983 .

Thermal Routes to Ultrathin Oxynitrides

E. P. Gusev, Leonard C. Feldman, D. Brasen, 1998 .

Materials analysis by ion channeling

Leonard C. Feldman, L. Feldman, 1982 .

Semiconductor to metal phase transition in the nucleation and growth of VO2 nanoparticles and thin films

Richard F. Haglund, Rene Lopez, Leonard C. Feldman, 2004 .

Initial growth studies of silicon oxynitrides in a N2O environment

Leonard C. Feldman, Martin L. Green, C.-S. Zhang, 1996 .

High resolution ion scattering study of silicon oxynitridation

Leonard C. Feldman, D. Brasen, Martin L. Green, 1996 .

Passivation of the 4H-SiC/SiO2 Interface with Nitric Oxide

Leonard C. Feldman, Robert A. Weller, Chin-Che Tin, 2002 .

Electrical characterization of an ultrahigh concentration boron delta‐doping layer

Don Monroe, Randall L. Headrick, Leonard C. Feldman, 1994 .

Vibrational lifetimes of hydrogen in silicon

Norman H. Tolk, Leonard C. Feldman, Gunter Lüpke, 2003 .

Fowler–Nordheim hole tunneling in p-SiC/SiO2 structures

Leonard C. Feldman, M. Di Ventra, Robert A. Weller, 2000 .

Fundamental issues in heteroepitaxy—A Department of Energy, Council on Materials Science Panel Report

Gerald B. Stringfellow, J. P. Harbison, Daniel J. Ehrlich, 1990 .

Nitrogen and Hydrogen Induced Trap Passivation at the SiO2/4H-SiC Interface

Leonard C. Feldman, Sokrates T. Pantelides, Tamara Isaacs-Smith, 2006 .

High Channel Mobility 4H-SiC MOSFETs by Antimony Counter-Doping

Michael C. Hamilton, Leonard C. Feldman, Aaron Modic, 2014, IEEE Electron Device Letters.

Photon energy threshold for filling boron induced charge traps in SiO2 near the Si/SiO2 interface using second harmonic generation

Norman H. Tolk, Kalman Varga, Leonard C. Feldman, 2010 .

Resistivity and oxygen content of indium tin oxide films deposited at room temperature by pulsed-laser ablation

Richard F. Haglund, Leonard C. Feldman, Robert A. Weller, 1999 .

Si/SiO2 and SiC/SiO2 Interfaces for MOSFETs – Challenges and Advances

Leonard C. Feldman, L. Tsetseris, Robert A. Weller, 2006 .

Effect of nitric oxide annealing on the interface trap density near the conduction bandedge of 4H–SiC at the oxide/(112̄0) 4H–SiC interface

J. R. Williams, Leonard C. Feldman, Dmitri Starodub, 2004 .

Size effects in the structural phase transition of VO2 nanoparticles

Rene Lopez, R. F. Haglund, Leonard C. Feldman, 2002 .

Channeling in Iron and Lattice Location of Implanted Xenon

Leonard C. Feldman, L. Feldman, D. Murnick, 1972 .

Nitrogen Passivation of the Interface States Near the Conduction Band Edge in 4H-Silicon Carbide

Leonard C. Feldman, Robert A. Weller, Sokrates T. Pantelides, 2001 .

Oxygen Incorporation in Rubrene Single Crystals

Alexander V. Neimark, Aleksey Vishnyakov, Leonard C. Feldman, 2014, Scientific Reports.

Increase in oxide hole trap density associated with nitrogen incorporation at the SiO2/SiC interface

Leonard C. Feldman, Valery V. Afanas'ev, John Rozen, 2008 .

Pseudomorphic growth of GexSi1−x on silicon by molecular beam epitaxy

John C. Bean, Leonard C. Feldman, R. T. Lynch, 1984 .

Effect of process variations and ambient temperature on electron mobility at the SiO/sub 2//4H-SiC interface

Leonard C. Feldman, Gilyong Chung, K. McDonald, 2003 .

Interface state density and channel mobility for 4H-SiC MOSFETs with nitrogen passivation

Leonard C. Feldman, Chin-Che Tin, Sokrates T. Pantelides, 2001 .

Fundamentals of Nanoscale Film Analysis

Terry Alford, Leonard C. Feldman, James W. Mayer, 2007 .

Effects of anneals in ammonia on the interface trap density near the band edges in 4H–silicon carbide metal-oxide-semiconductor capacitors

Leonard C. Feldman, M. Di Ventra, Robert A. Weller, 2000 .

Nitridation anisotropy in SiO2∕4H–SiC

J. R. Williams, Leonard C. Feldman, K.-C. Chang, 2005 .

Giant enhancement of luminescence intensity in Er‐doped Si/SiO2 resonant cavities

Leonard C. Feldman, P. C. Becker, George John Zydzik, 1992 .

Reduced Critical Current Spread in Planar MgB2 Josephson Junction Array Made by Focused Helium Ion Beam

Ke Chen, Leonard C. Feldman, Mengjun Li, 2019, IEEE Transactions on Applied Superconductivity.

The Formation and Structure of CVD W Films Produced by the Si Reduction of WF 6

Leonard C. Feldman, Martin L. Green, L. Feldman, 1987 .

GexSi1−x/Si strained‐layer superlattice grown by molecular beam epitaxy

John C. Bean, Ian K. Robinson, Leonard C. Feldman, 1984 .

Interface state densities near the conduction band edge in N-type 4H- and 6H-SiC

J. R. Williams, Leonard C. Feldman, Robert A. Weller, 2000, 2000 IEEE Aerospace Conference. Proceedings (Cat. No.00TH8484).

Synthesis and characterization of size-controlled vanadium dioxide nanocrystals in a fused silica matrix

Richard F. Haglund, Rene Lopez, Leonard C. Feldman, 2002 .

Ultrathin SiOxNy by rapid thermal heating of silicon in N2 at T=760–1050 °C

E. P. Gusev, Leonard C. Feldman, Martin L. Green, 1997 .

The Limits of Post Oxidation Annealing in NO

Leonard C. Feldman, John Rozen, L. Feldman, 2010 .

Channel Mobility Improvement in 4H-SiC MOSFETs Using a Combination of Surface Counter-Doping and NO Annealing

Leonard C. Feldman, Aaron Modic, Yongju Zheng, 2015 .

Electronic thin film science : for electrical engineers and materials scientists

Leonard C. Feldman, King-Ning Tu, James W. Mayer, 1996 .