Tae Hyung Park

发表

Automatic classification of SMD packages using neural network

SeungGeun Youn, Youn Ae Lee, Tae Hyung Park, 2014 .

Double Layers-Stacked 3D 1D1R Crossbar Rram Integrating a Diode Selector with Rectification Ratio of ~109

Tae Hyung Park, Cheol Seong Hwang, Kyung Jean Yoon, 2016 .

Dual Conical Conducting Filament Model in Resistance Switching TiO2 Thin Films

Tae Hyung Park, Kyung Min Kim, Cheol Seong Hwang, 2015, Scientific Reports.

A Stateful Logic Family Based on a New Logic Primitive Circuit Composed of Two Antiparallel Bipolar Memristors

Xinglong Shao, Nuo Xu, Tae Hyung Park, 2019, Adv. Intell. Syst..

Filament Shape Dependent Reset Behavior Governed by the Interplay between the Electric Field and Thermal Effects in the Pt/TiO2/Cu Electrochemical Metallization Device

Young Jae Kwon, Tae Hyung Park, Cheol Seong Hwang, 2017 .

Pt/Ta2O5/HfO2−x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash

Young Jae Kwon, Tae Hyung Park, Cheol Seong Hwang, 2015, Advanced materials.

The current limit and self-rectification functionalities in the TiO2/HfO2 resistive switching material system.

Young Jae Kwon, Tae Hyung Park, Cheol Seong Hwang, 2017, Nanoscale.

Defect engineered electroforming-free analog HfOx memristor and its application to the neural network.

Tae Hyung Park, Woohyun Kim, Cheol Seong Hwang, 2019, ACS applied materials & interfaces.

A study of the transition between the non-polar and bipolar resistance switching mechanisms in the TiN/TiO2/Al memory.

Young Jae Kwon, Tae Hyung Park, Cheol Seong Hwang, 2016, Nanoscale.

Next‐Generation Memory: Double‐Layer‐Stacked One Diode‐One Resistive Switching Memory Crossbar Array with an Extremely High Rectification Ratio of 109 (Adv. Electron. Mater. 7/2017)

Sijung Yoo, Tae Hyung Park, Cheol Seong Hwang, 2017 .

Thickness effect of ultra-thin Ta2O5 resistance switching layer in 28 nm-diameter memory cell

Tae Hyung Park, Cheol Seong Hwang, Suock Chung, 2015, Scientific Reports.

Evolution of the shape of the conducting channel in complementary resistive switching transition metal oxides.

Tae Hyung Park, Cheol Seong Hwang, Kyung Jean Yoon, 2014, Nanoscale.

Roles of conducting filament and non-filament regions in the Ta2O5 and HfO2 resistive switching memory for switching reliability.

Tae Hyung Park, Cheol Seong Hwang, Byung Joon Choi, 2017, Nanoscale.

A Review of Three‐Dimensional Resistive Switching Cross‐Bar Array Memories from the Integration and Materials Property Points of View

Doo Seok Jeong, Tae Hyung Park, Cheol Seong Hwang, 2014 .

Uniform Self-rectifying Resistive Switching Behavior via Preformed Conducting Paths in a Vertical-type Ta2O5/HfO2-x Structure with a Sub-μm(2) Cell Area.

Sijung Yoo, Young Jae Kwon, Tae Hyung Park, 2016, ACS applied materials & interfaces.

Fabrication of a Cu‐Cone‐Shaped Cation Source Inserted Conductive Bridge Random Access Memory and Its Improved Switching Reliability

Young Jae Kwon, Tae Hyung Park, Cheol Seong Hwang, 2019, Advanced Functional Materials.