J. Hwu

发表

Light Sensing Enhancement and Energy Saving Improvement in Concentric Double-MIS(p) Tunnel Diode Structure With Inner Gate Outer Sensor Operation

Yu‐Hsuan Chen, J. Hwu, 2018, IEEE Transactions on Electron Devices.

Oxide-Thickness-Dependent Suboxide Width and Its Effect on Inversion Tunneling Current

Yen‐Po Lin, J. Hwu, 2004 .

Electrical characterization and process control of cost-effective high-k aluminum oxide gate dielectrics prepared by anodization followed by furnace annealing

J. Hwu, Szu-Wei Huang, 2003 .

Constant peak field distribution and voltage dropping in the oxide layer of a MOS capacitor during charge-temperature aging

J. Hwu, Way-Seen Wang, 1987 .

J. Hwu, J. Hwang, Y. Chiou, 1985 .

Oxide-Trapped Charges Induced by Electrostatic Discharge Impulse Stress

J. Hwu, J. Tseng, 2007, IEEE Transactions on Electron Devices.

Two Capacitance States Memory Characteristic in Metal–Oxide–Semiconductor Structure Controlled by an Outer MOS-Gate Ring

J. Hwu, Hao-Jyun Li, Chang-Feng Yang, 2019, IEEE Transactions on Electron Devices.

Surface Nonuniformity-Induced Frequency Dispersion in Accumulation Capacitance for Silicon MOS(n) Capacitor

Huang-Hsuan Lin, J. Hwu, 2016, IEEE Transactions on Electron Devices.

Non-planar substrate effect on the interface trap capacitance of metal-oxide-semiconductor structures with ultra thin oxides

J. Hwu, Po-Hao Tseng, 2012 .

Effects of electrostatic discharge high-field current impulse on oxide breakdown

Jen-Chou Tseng, Jenn-Gwo Hwu, J. Hwu, 2007 .

Non-Planar Substrate Metal-Oxide-Semiconductor Photo-Capacitance Detectors with Enhanced Deep Depletion Sensitivity at Convex Corner

J. Hwu, Po-Hao Tseng, 2014 .

Enhanced saturation current sensitivities to charge trapping and illumination in MOS tunnel diode by inserting metal in gate dielectric

J. C. Chen, J. Hwu, W. Kao, 2016 .

Reliable fluorinated thin gate oxides prepared by liquid phase deposition following rapid thermal process

J. Hwu, W. Lu, 1996 .

luorinated Thin Gate Oxides repared by Liqui Phase Deposition Following Rapid Thermal Process

J. Hwu, W. Lu, 1996 .

Enhancement in soft breakdown occurrence of ultra-thin gate oxides caused by photon effect in rapid thermal post-oxidation annealing

Jenn-Gwo Hwu, J. Hwu, Chia-Hong Huang, 2000 .

Comparison of the Reliability of Thin $\hbox{Al}_{2} \hbox{O}_{3}$ Gate Dielectrics Prepared by In Situ Oxidation of Sputtered Aluminum in Oxygen Ambient With and Without Nitric Acid Compensation

J. Hwu, Chien-Chih Lin, 2011, IEEE Transactions on Device and Materials Reliability.

Ultralow Leakage Characteristics of Ultrathin Gate Oxides ( 3 nm ) Prepared by Anodization Followed by High-Temperature Annealing

Y. Shih, J. Hwu, C. Ting, 2009 .

Thin-gate oxides prepared by pure water anodization followed by rapid thermal densification

Ming-Jer Jeng, J. Hwu, M. Jeng, 1996 .

Enhanced Photo Sensing and Lowered Power Consumption in Concentric MIS Devices by Monitoring Outer Ring Open-Circuit Voltage With Biased Inner Gate

J. Hwu, Chen-Yun Huang, 2021, IEEE Transactions on Electron Devices.

Metal–Oxide–Semiconductor Structure Solar Cell Prepared by Low-Temperature ( < 400 ° C ) Anodization Technique

J. Hwu, Chih-Yao Wang, 2009 .

Rapid thermal post-metallization annealing effect on thin gate oxides

Ming-Jer Jeng, J. Hwu, Huang-Shen Lin, 1996 .

Roles of interface and oxide trap density in the kinked current behavior of Al/SiO2/Si(p) structures with ultra-thin oxides

J. Hwu, Hanlun Lu, 2014 .

Investigation of interface property in Al/SiO2/n-SiC structure with thin gate oxide by illumination

J. Hwu, P. Chang, 2017 .

Thickness-dependent stress effect in p-type metal-oxide-semiconductor structure investigated by substrate injection current

J. Hwu, Wei-Jian Liao, Chao-Chi Hong, 2003 .

Rapid thermal postoxidation anneal engineering in thin gate oxides with Al gates

Ming-Jer Jeng, J. Hwu, Chin-Yang Chen, 1998 .

Improvement of Electrical Performance of HfO2/SiO2/4H-SiC Structure with Thin SiO2

Chia-ming Hsu, J. Hwu, Chin-Wei Hsu, 2013 .

Metal-oxide-semiconductor tunneling photodiodes with enhanced deep depletion at edge by high-k material

J. Hwu, Jen-Yuan Cheng, Hui-Ting Lu, 2010 .

Low Temperature Tandem Aluminum Oxides Prepared by DAC-ANO Compensation in Nitric Acid

J. Hwu, Che-Yu Yang, 2009 .

Quantum-mechanical calculation of carrier distribution in MOS accumulation and strong inversion layers

J. Hwu, Chien-Wei Lee, 2013 .

Improvement in the electrical properties of thin gate oxides by chemical-assisted electron stressing followed by annealing (CAESA)

Y. Shih, J. Hwu, 1999 .

Light-to-Dark Current Ratio Enhancement on MIS Tunnel Diode Ambient Light Sensor by Oxide Local Thinning Mechanism and Near Power-Free Neighboring Gate

J. Hwu, Chang-Feng Yang, 2018, IEEE Transactions on Electron Devices.

Process dependency of radiation hardness of rapid thermal reoxidized nitrided gate oxides

J. Hwu, W. Lu, K. Lin, 1993 .

Effect of H2O on the electrical characteristics of ultra-thin SiO2 prepared with and without vacuum treatments after anodization

J. Hwu, Tzu‐Yu Chen, Hanlun Lu, 2013 .

Fluorinated thin gate oxides prepared by room temperature deposition followed by furnace oxidation

Ming-Jer Jeng, J. Hwu, Kuo-Lang Yeh, 1999 .

Radiation hardness of fluorinated oxides prepared by liquid phase deposition method following rapid thermal oxidation

J. Hwu, Si‐Chen Lee, Jenq‐Shiuh Chou, 1994, International Electron Devices and Materials Symposium.

Enhanced thermally induced stress effect on an ultrathin gate oxide

J. Hwu, Chao-Chi Hong, J. Su, 2002 .

Corner induced non-uniform electric field effect on the electrical reliability of metal–oxide–semiconductor devices with non-planar substrates

J. Hwu, Po-Hao Tseng, 2014 .

Enhanced Two States Current in MOS-Gated MIS Separate Write/Read Storage Device by Oxide Soft Breakdown in Remote Gate

J. Hwu, Chang-Feng Yang, Wei-Chen Chen, 2019, IEEE Transactions on Nanotechnology.

Schottky Barrier Height Modulation (SBHM) Induced Photon Current Gain in MIS(p) Tunnel Diodes for Low Operation Voltage

J. Hwu, K. Chen, 2022, IEEE Sensors Journal.

Role of Schottky Barrier Height Modulation on the Reverse Bias Current Behavior of MIS(p) Tunnel Diodes

J. Hwu, K. Chen, K. Lin, 2021, IEEE Access.

Effect of postoxidation annealing on the reliability of rapid thermal thin gate oxides

J. Hwu, Chin-Yang Chen, 1997 .

Performance prediction and function recovery of CMOS circuits damaged by Co-60 irradiation

J. Hwu, K. Chang-Liao, 1992 .

Effect of oxide resistance on the characterization of interface trap density in MOS structures

Jing-Jenn Lin, J. Hwu, 1991 .

Resistance-dependent field effect on the radiation behavior of MOS capacitors examined by instantaneous-terminal-voltage technique

J. Hwu, S. Fu, 1990 .

The effect of postoxidation cooling in oxygen on the interface property of MOS capacitors

J. Hwu, Way-Seen Wang, Jen-Jue Chang, 1986 .

Characteristics and Reliability of Hafnium Oxide Dielectric Stacks With Room Temperature Grown Interfacial Anodic Oxide

J. Hwu, C. Chang, 2009, IEEE Transactions on Device and Materials Reliability.

Direct indication of lateral nonuniformities of MOS capacitors from the negative equivalent interface trap density based on charge-temperature technique

J. Hwu, W. S. Wang, W. Wang, 1986 .

Gate Oxide Local Thinning Mechanism-Induced Sub-60 mV/Decade Subthreshold Swing on Charge-Coupled MIS(p) Tunnel Transistor

J. Hwu, Chang-Feng Yang, Wei-Chen Chen, 2019, IEEE Transactions on Electron Devices.

Thin silicon oxide films on N-type 4H-SiC prepared by scanning frequency anodization method

J. Hwu, K. Chuang, 2009 .

Improved Two States Characteristics in MIS Tunnel Diodes by Oxide Local Thinning Enhanced Transient Current Behavior

J. Hwu, Sung-Wei Huang, 2022, IEEE Transactions on Electron Devices.

Application of irradiation-then-nitridation to improve the radiation hardness in MOS gate dielectrics

J. Hwu, Kuo-Chung Lee, 1996 .

Improvement in reliability of n-MOSFETs by using rapid thermal N2O-reoxidized nitrided gate oxides

You-Lin Wu, J. Hwu, Zhao-Yin Wu, 1995 .

Improvement in radiation hardness of gate oxides in metal–oxide semiconductor devices by repeated rapid thermal oxidations in N2O

You-Lin Wu, J. Hwu, 1994 .

Local Thinning-Induced Oxide Nonuniformity Effect on the Tunneling Current of Ultrathin Gate Oxide

J. Hwu, Wei-Ren Chen, Chao-Chi Hong, 2002 .

Electrical characterisation of the insulating property of Ta/sub 2/O/sub 5/ in Al-Ta/sub 2/O/sub 5/--Circuits, Devices and Systems, IEE Proceedings G

J. Hwu, S. Lin, 2004 .

Clockwise C‐V hysteresis phenomena of metal–tantalum‐oxide–silicon‐oxide–silicon ( p) capacitors due to leakage current through tantalum oxide

Y. Tu, J. Hwu, Way-Seen Wang, 1987 .

Nitric acid compensated aluminum oxide dielectrics with improved negative bias reliability and positive bias temperature response

J. Hwu, Chien-Chi Lin, 2013 .

Thin-oxide thickness measurement in ellipsometry by a wafer rotation method

J. Hwu, I. Ho, Shou-Pin Chou, 1990 .

Application of Anodization to Reoxidize Silicon Nitride Film

Yen‐Po Lin, J. Hwu, 2001 .

Tunable Negative Differential Resistance in MISIM Tunnel Diodes Structure With Concentric Circular Electrodes Controlled by Designed Substrate Bias

J. Hwu, Chang-Feng Yang, 2017, IEEE Transactions on Electron Devices.

Comprehensive Study on Negative Capacitance Effect Observed in MOS(n) Capacitors With Ultrathin Gate Oxides

J. Hwu, S. Chang, 2011, IEEE Transactions on Electron Devices.

Comprehensive study on the deep depletion capacitance-voltage behavior for metal-oxide-semiconductor capacitor with ultrathin oxides

J. Hwu, C. Huang, Jen-Yuan Cheng, 2009 .

Improvement in the breakdown endurance of high-κ dielectric by utilizing stacking technology and adding sufficient interfacial layer

J. Hwu, C. Pang, 2014, Nanoscale Research Letters.

Enhancement of silicon oxidation rate due to tensile mechanical stress

J. Hwu, J. Yen, 2000 .

Process control of rapid thermal N2O-annealed thin gate oxides

J. Hwu, Yizhen Huang, W. Lu, 1996 .

A systematic study of the initial electrical and radiation hardness properties of reoxidized nitrided oxides by rapid thermal processing

J. Hwu, W. Lu, C.H. Chan, 1995 .

Improvement in radiation hardness of reoxidized nitrided oxide (RNO) in the absence of post-oxidation anneal

You-Lin Wu, J. Hwu, 1993 .

Effect of interface traps related to mobile charges on silicon n-channel metal/oxide/semiconductor field effect transistors determined by a charge-temperature technique

J. Hwu, Way-Seen Wang, Chien-Hung Lin, 1986 .

Characterization of Stacked Hafnium Oxide (HfO2)/Silicon Dioxide (SiO2) Metal-Oxide-Semiconductor (MOS) Tunneling Temperature Sensors

J. Hwu, Chih-Yao Wang, 2009 .

Comprehensive Study of Inversion Capacitance in Metal-Insulator-Semiconductor Capacitor With Existing Oxide Charges

J. Hwu, Sung-Wei Huang, K. Chen, 2022, IEEE Journal of the Electron Devices Society.

Investigation on edge fringing effect and oxide thickness dependence of inversion current in metal-oxide-semiconductor tunneling diodes with comb-shaped electrodes

J. Hwu, Chien-Chi Lin, Lien-Sheng Lin, 2014 .

Effect of trapped electrons in ultrathin SiO2 on the two-state inversion capacitance at varied frequencies of metal-oxide-semiconductor capacitor

J. Hwu, Tzu-Yu Chen, 2014 .

Characterization of Edge Fringing Effect on the $C$ –$V$ Responses From Depletion to Deep Depletion of MOS(p) Capacitors With Ultrathin Oxide and High-$\kappa$ Dielectric

J. Hwu, Jen-Yuan Cheng, 2012, IEEE Transactions on Electron Devices.

Energy-Saving Write/Read Operation of Memory Cell by Using Separated Storage Device and Remote Reading With an MIS Tunnel Diode Sensor

Jenn-Gwo Hwu, Wei-Chih Kao, Chien-Shun Liao, 2016, IEEE Journal of the Electron Devices Society.

Remote Gate-Controlled Negative Transconductance in Gated MIS Tunnel Diode

J. Hwu, C. Liao, 2016, IEEE Transactions on Electron Devices.

Enhanced nitrogen incorporation and improved breakdown endurance in nitrided gate oxides prepared by anodic oxidation followed by rapid thermal nitridation in N2O

J. Hwu, M. Jeng, 1996 .

Photo-induced tunneling currents in MOS structures with various HfO2/SiO2 stacking dielectrics

J. Hwu, C. Pang, 2014 .

Trapping characteristics of Al2O3/HfO2/SiO2 stack structure prepared by low temperature in situ oxidation in dc sputtering

J. Hwu, Chia‐Hua Chang, 2009 .

Stress effect on the kinetics of silicon thermal oxidation

J. Hwu, J. Yen, 2001 .

Role of fringing field on the electrical characteristics of metal-oxide-semiconductor capacitors with co-planar and edge-removed oxides

J. Hwu, Chang-Feng Yang, 2016 .

Silicon Oxide Gate Dielectric on n-Type 4H–SiC Prepared by Low Thermal Budget Anodization Method

J. Hwu, K. Chuang, 2008 .

Edge-Etched Al2O3 Dielectric as Charge Storage Region in a Coupled MIS Tunnel Diode Sensor

J. Hwu, Bo-Jyun Chen, 2020, IEEE Journal of the Electron Devices Society.

Investigation of carbon interstitials with varied SiO2 thickness in HfO2/SiO2/4H-SiC structure

Chia-ming Hsu, J. Hwu, 2012 .

Modeling and Characterization of Hydrogen-Induced Charge Loss in Nitride-Trapping Memory

Y. Shih, K. Hsieh, J. Hwu, 2007, IEEE Transactions on Electron Devices.

Enhanced irradiance sensitivity of 4H-SiC based ultraviolet sensor introducing laterally gated Al/SiO2/SiC tunnel diode structure with low gate bias

J. Hwu, P. Chang, 2018, Journal of Applied Physics.

Ultra-thin gate oxides prepared by alternating current anodization of silicon followed by rapid thermal anneal

J. Hwu, Chuang-yuan Lee, Yung-Chieh Chen, 2001 .

Electrical characterization of 4H-SiC metal–oxide–semiconductor structure with Al2O3 stacking layers as dielectric

J. Hwu, P. Chang, 2018 .

Stack engineering of low-temperature-processing Al2O3 dielectrics prepared by nitric acid oxidation for MOS structure

J. Hwu, Ching-Hang Chen, 2010 .

Electrical characteristics of ultra-thin gate oxides (<3 nm) prepared by direct current superimposed with alternating-current anodization

J. Hwu, Szu-Wei Huang, Zhihong Chen, 2004 .

Quality improvement of ultrathin gate oxide by using thermal growth followed by SF ANO technique

J. Hwu, Yi-Lin Yang, 2004 .

Ultralow leakage characteristics of ultrathin gate oxides (/spl sim/3 nm) prepared by anodization followed by high-temperature annealing

Y. Shih, J. Hwu, C. Ting, 2002 .

Improvement in ultrathin rapid thermal oxide uniformity by the control of gas flow

J. Hwu, Chao-Chi Hong, J. Su, 2002 .

Degradation in metal-oxide-semiconductor structure with ultrathin gate oxide due to external compressive stress

Jenn-Gwo Hwu, J. Hwu, Chao-Chi Hong, 2001 .

Study and Optimization of Two-State Transient Currents at Millisecond Time Scales in MIS Tunnel Diodes

J. Hwu, Sung-Wei Huang, 2023, IEEE Transactions on Electron Devices.

Electrical characterization of 4H-SiC metal–oxide–semiconductor structure with Al2O3 stacking layers as dielectric

J. Hwu, P. Chang, 2018, Applied Physics A.

Direct indication of interface trap states in an MOS capacitor from the peaks of optimal illumination-induced capacitances

J. Hwu, Way-Seen Wang, 1987 .

Enhancement in ultrathin oxide growth by thermal-induced tensile stress

J. Hwu, C. Hung, 2006 .

Stress distribution on [100] Si wafer mapped by novel I-V analysis of MOS tunneling diodes

J. Hwu, Chao-Chi Hong, 2003 .

The effect of patterned susceptor on the thickness uniformity of rapid thermal oxides

J. Hwu, T. Wung, Hong-Yuan Chang, 1999 .

Ultrathin Gate Oxides Prepared by Tensile-Stress Oxidation in Tilted Cathode Anodization System

J. Hwu, K. Chuang, Tsung-Hung Li, 2008 .

Effect of Mechanical Stress on Characteristics of Silicon Thermal Oxides

Jenn-Gwo Hwu, J. Hwu, Chia-Hong Huang, 2002 .

Performance enhancement of metal-oxide-semiconductor tunneling temperature sensors with nanoscale oxides by employing ultrathin Al2O3 high-k dielectrics.

Jenn-Gwo Hwu, J. Hwu, Chien-Chi Lin, 2013, Nanoscale.

Role of stress in irradiation‐then‐anneal technique used for improving radiation hardness of metal‐insulator‐semiconductor devices

J. Hwu, Changlin Liao, K. Shu, 1992 .