M. Bailon

Analysis of near-IR photon emissions from 50-nm n- and p-channel Si MOSFETs

N.C. de Luna, M. Bailon, A. Tarun, 2005, IEEE Transactions on Electron Devices.

Characterization of EOS induced defects on submicron devices using 2D spectral imaging

M. Bailon, P. Salinas, J.S. Arboleda, 2005, 2005 IEEE International Integrated Reliability Workshop.

Room temperature defect localization of hot and cold failures using scanning probe microscopy techniques

M. Bailon, A. Tarun, J. Miranda, 2005, Proceedings of the 12th International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2005. IPFA 2005..

Localization of electrical failures from the backside of the die: Failure Analysis case studies using infrared emission microscope

M. Bailon, A. Tarun, M. Nery, 2003, Proceedings of the 10th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2003.

Observation of the Quantum-Confined Stark Effect in a GaAs/AlGaAs P-I-N Diode by Room Temperature Photocurrent Spectroscopy

A. Salvador, M. Bailon, E. Estacio, 2007 .

Observation of high junction electric fields in modulation-doped GaAs/AlGaAs heterostructures by room temperature photoreflectance spectroscopy

A. Salvador, R. Sarmiento, M. Bailon, 2002 .

Rapid subsurface detection of nanoscale defects in live microprocessors by functional infrared emission spectral microscopy.

M. Soriano, C. Saloma, M. Bailon, 2005, Applied optics.