C. Cirba

Physical model for enhanced interface-trap formation at low dose rates

Ronald D. Schrimpf, Daniel M. Fleetwood, C. R. Cirba, 2002 .

Two-dimensional simulation of total dose effects on NMOSFET with lateral parasitic transistor

J. L. Pelloie, C. Cirba, A. Michez, 1996 .

Simulation of multi-level radiation-induced charge trapping and thermally activated phenomena in SiO/sub 2/

C. Cirba, A. Michez, P. Paillet, 1997 .

Modeling low-dose-rate effects in irradiated bipolar-base oxides

F. Saigne, Ronald D. Schrimpf, Daniel M. Fleetwood, 1998 .

Influence of total-dose radiation on the electrical characteristics of SOI MOSFETs

Ronald D. Schrimpf, Daniel M. Fleetwood, Marty R. Shaneyfelt, 2004 .

Proton radiation response mechanisms in bipolar analog circuits

R. L. Pease, Ronald D. Schrimpf, C. R. Cirba, 2001 .

Compact Modeling of Four-Terminal Junction Field-Effect Transistors

J. Liou, K. Green, C. Cirba, 2005 .

Origins of total-dose response variability in linear bipolar microcircuits

R. L. Pease, Ronald D. Schrimpf, Daniel M. Fleetwood, 2000 .

TCAD-based simulation of hot-carrier degradation in p-channel mosfets using silicon energy-balance and oxide carrier-transport equations

peixiong zhao, K. Galloway, C. Cirba, 1996, Journal of Technology Computer Aided Design TCAD.

A new model for four-terminal junction field-effect transistors

Hao Ding, Juin J. Liou, Keith Green, 2006 .

Simulation of multi-level radiation-induced charge trapping and thermally activated phenomena in SiO/sub 2/

J. Leray, P. Paillet, C. Cirba, 1997, RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294).

Total dose effects on double gate fully depleted SOI MOSFETs

S. Cristoloveanu, peixiong zhao, D. Fleetwood, 2004, IEEE Transactions on Nuclear Science.