B. D. White

发表

Low energy electron-excited nanoscale luminescence: a tool to detect trap activation by ionizing radiation

peixiong zhao, D. Fleetwood, G. Lucovsky, 2000 .

Electrical, spectral, and chemical properties of 1.8 MeV proton irradiated AlGaN/GaN HEMT structures as a function of proton fluence

Ronald D. Schrimpf, Daniel M. Fleetwood, Leonard J. Brillson, 2003 .

Detection of trap activation by ionizing radiation in SiO2 by spatially localized cathodoluminescence spectroscopy

peixiong zhao, D. Fleetwood, S. Pantelides, 2002 .

Proton-irradiation effects on AlGaN/AlN/GaN high electron mobility transistors

Umesh K. Mishra, Bongim Jun, Ronald D. Schrimpf, 2003 .

Proton-induced damage in gallium nitride-based Schottky diodes

peixiong zhao, D. Fleetwood, R. Weller, 2005, IEEE Transactions on Nuclear Science.

Proton-Induced Damage in Gallium Nitride-Based

peixiong zhao, D. Fleetwood, R. Weller, 2005 .

Role of Near-Surface States in Ohmic-Schottky Conversion of Au Contacts to ZnO

D. C. Reynolds, D. Look, Y. Strzhemechny, 2005 .

Characterization of 1.8-MeV proton-irradiated AlGaN/GaN field-effect transistor structures by nanoscale depth-resolved luminescence spectroscopy

peixiong zhao, D. Fleetwood, W. Schaff, 2002 .

Effects of deep-level defects on ohmic contact and frequency performance of AlGaN/GaN high-electron-mobility transistors

G. Jessen, R. Fitch, J. Gillespie, 2003 .

Simultaneous observation of luminescence and dissociation processes of Mg–H complex for Mg-doped GaN

S. Kamiyama, H. Amano, I. Akasaki, 2002 .

Depth-resolved detection and process dependence of traps at ultrathin plasma-oxidized and deposited SiO2/Si interfaces

G. Lucovsky, B. D. White, L. Brillson, 2000 .

Proton irradiation effects on GaN-based high electron-mobility transistors with Si-doped Al/sub x/Ga/sub 1-x/N and thick GaN cap Layers

peixiong zhao, D. Fleetwood, R. Weller, 2004, IEEE Transactions on Nuclear Science.