Y. M. Lee

发表

Low energy electron-excited nanoscale luminescence: a tool to detect trap activation by ionizing radiation

peixiong zhao, D. Fleetwood, G. Lucovsky, 2000 .

Tunnel magnetoresistance of 604% at 300K by suppression of Ta diffusion in CoFeB∕MgO∕CoFeB pseudo-spin-valves annealed at high temperature

H. Ohno, J. Hayakawa, S. Ikeda, 2008 .

Structural dependence of breakdown characteristics and electrical degradation in ultrathin RPECVD oxide/nitride gate dielectrics under constant voltage stress

G. Lucovsky, Y. Wu, Y. M. Lee, 2003 .

Heavy-ion-induced breakdown in ultra-thin gate oxides and high-k dielectrics

peixiong zhao, D. Fleetwood, P. Dodd, 2001 .

Ge nitride formation in N-doped amorphous Ge2Sb2Te5

Min-Gon Kim, Hyun-Joon Shin, Moonsup Han, 2007 .

Long-term reliability degradation of ultrathin dielectric films due to heavy-ion irradiation

Lloyd W. Massengill, Kenneth F. Galloway, Ronald D. Schrimpf, 2002 .

Reliability degradation of ultra-thin oxynitride and Al/sub 2/O/sub 3/ gate dielectric films owing to heavy-ion irradiation

R. S. Johnson, peixiong zhao, D. Fleetwood, 2002 .

Independent Tunneling Reductions Relative to Homogeneous Oxide Dielectrics From i) Nitrided Interfaces, and ii) Physically-Thicker Stacked Oxide/Nitride and Oxide/Oxynitride Gate Dielectrics

G. Lucovsky, Y. Wu, Y. M. Lee, 1999 .

Chemical states of GeTe thin-film during structural phase-change by annealing in ultra-high vacuum

J. C. Park, Y. M. Lee, M. Jung, 2008 .

Effect of boron addition on disorder–order transformation of FePt thin films

Y. M. Lee, B. Koo, B. S. Lee, 2007 .

Domain wall generation and propagation in an amorphous ferromagnetic NiFeSiB film confirmed by the magneto-optical indicator film method

Y. M. Lee, J. Hwang, J. Rhee, 2011 .

Investigation of electronic structure of amorphous, metastable, and stable phases of Ge1Sb2Te4 film by high-resolution x-ray photoemission spectroscopy

Hyun-Beom Shin, Y. M. Lee, M. Jung, 2008 .

Depth-resolved detection and process dependence of traps at ultrathin plasma-oxidized and deposited SiO2/Si interfaces

G. Lucovsky, B. D. White, L. Brillson, 2000 .

Effect of indium on phase-change characteristics and local chemical states of In–Ge–Sb–Te alloys

D. Suh, Tae-Yon Lee, Ki-Joon Kim, 2008 .

High-Resolution X-Ray Photoelectron Spectroscopy Study of a Sb2Te3 Thin Film with the Polycrystalline Phase

Y. Qi, Y. M. Lee, M. Jung, 2012 .

Tunnel magnetoresistance with plasma oxidation time in doubly oxidized barrier process

Y. M. Lee, O. Song, C. Yoon, 2003 .