R. Stahlbush

发表

Interaction of hydrogen with defects in a-SiO2

Arthur H. Edwards, Robert E. Stahlbush, A. Edwards, 1994 .

H/sup +/ motion in SiO/sub 2/: incompatible results from hydrogen-annealing and radiation models

H. L. Hughes, R. K. Lawrence, Robert E. Stahlbush, 1998 .

Post-irradiation behavior of the interface state density and the trapped positive charge

R. K. Lawrence, B. J. Mrstik, Robert E. Stahlbush, 1990 .

Near interface H+ trapping and its influence on H+ transport in hydrogenated Unibond buried oxides

Robert E. Stahlbush, R. Stahlbush, P. J. Macfarlane, 2000 .

H+ Motion in SO2: Incompatible Results from Hydrogen- Annealing and Radiation Models'

H. Hughes, R. Stahlbush, R. Lawrence, 1998 .

Effects of Introducing H2 Into Irradiated Mosfet’s from Room Temperature to 250°C

A. Edwards, R. Stahlbush, R. E. Stahlbush, 1993 .

Post‐irradiation cracking of H2 and formation of interface states in irradiated metal‐oxide‐semiconductor field‐effect transistors

Arthur H. Edwards, David L. Griscom, B. J. Mrstik, 1993 .

Interface states induced by the presence of trapped holes near the silicon–silicon‐dioxide interface

James H. Stathis, Douglas A. Buchanan, J. Stathis, 1995 .

Carrier lifetime variation in thick 4H-SiC epilayers using two-photon absorption

S. Buchner, P. Klein, R. Stahlbush, 2017 .

Expansion of Shockley Stacking faults in high doped 4H-SiC epilayers

K. Hobart, R. Myers-Ward, C. Eddy, 2011, 2011 International Semiconductor Device Research Symposium (ISDRS).

lOkV 4H-SiC PiN Diodes Designed for Improved Switching Performance using Emitter Injection Control

C. Li, R. Gutmann, T. Chow, 2007, Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's.

H. Hughes, W. Carlos, R. Stahlbush, 1993 .

Radiation‐induced E’ centers in H2‐annealed oxide films

W. Carlos, R. Stahlbush, M. Zvanut, 1992 .

Electron and hole trapping in the buried oxide of Unibond wafers

R. Stahlbush, 1997 .

High-resolution dislocation imaging and micro-structural analysis of HVPE-βGa2O3 films using monochromatic synchrotron topography

K. Hobart, T. Anderson, R. Stahlbush, 2019, APL Materials.

Semiconductor–Insulator–Semiconductor Structures

R. Stahlbush, M. Zvanut, 1999 .

Influence of Basal Plane Dislocation Induced Stacking Faults on the Current Gain in SiC BJTs

A. Agarwal, S. Ryu, S. Krishnaswami, 2006 .

Infrared photoluminescence in polyacetylene

R. Stahlbush, E. Imhoff, D. B. Fitchen, 1982 .

Effect of oxidation and reoxidation on the oxide-substrate interface of 4H- and 6H-SiC

N. Saks, R. Stahlbush, G. Jernigan, 2000 .

Temperature-mediated saturation and current-induced recovery of the Vf drift in 4H-SiC p-i-n diodes

K. Hobart, R. Stahlbush, O. Glembocki, 2007 .

Elimination of Basal Plane Dislocations in Epitaxial 4H-SiC via Multicycle Rapid Thermal Annealing

J. Freitas, P. Klein, J. Greenlee, 2015 .

Static Performance and Reliability of 4H-SiC Diodes with P+ Regions Formed by Various Profiles and Temperatures

A. Agarwal, M. Dudley, R. Stahlbush, 2022, 2022 IEEE International Reliability Physics Symposium (IRPS).

Cross-polarization imaging and micro-raman detection of defects in the epitaxy of 4H-SiC

S. Prokes, R. Stahlbush, O. Glembocki, 2005 .

Radiation and Processing Induced Effects in SIMOX: A Spectroscopic Study

W. Carlos, S. Prokes, R. Stahlbush, 1987, IEEE Transactions on Nuclear Science.

Bulk trap formation by high temperature annealing of buried thermal oxides [SIMOX]

R. Stahlbush, G. Brown, 1995 .

GENERATION OF THERMALLY INDUCED DEFECTS IN BURIED SIO2 FILMS

R. Stahlbush, M. Zvanut, T. Chen, 1995 .

Interfacial point defects in heavily implanted silicon germanium alloys

W. Carlos, M. Twigg, R. Stahlbush, 1992 .

Basal plane dislocation reduction in 4H-SiC epitaxy by growth interruptions

K. Lew, R. Myers-Ward, C. Eddy, 2009 .

Interfacial differences between SiO2 grown on 6H-SiC and on Si(100)

J. Cooper, M. Das, L. Lipkin, 1999 .

Bias‐Dependent Etching of Silicon in Aqueous KOH

R. Stahlbush, O. Glembocki, M. Tomkiewicz, 1985 .

Spin-flop in a one-dimensional antiferromagnet

J. C. Scott, R. Stahlbush, 1980 .

11.72-$\hbox{cm}^{2}$ Active-Area Wafer-Interconnected p-i-n Diode Pulsed at 64 kA Dissipates 382 J and Exhibits an Action of 1.7 $\hbox{MA}^{2}\cdot\hbox{s}$

T. McNutt, R. Howell, V. Veliadis, 2012, IEEE Electron Device Letters.

Evolution of lattice distortions in 4H-SiC wafers with varying doping

R. Stahlbush, S. Stoupin, V. Rengarajan, 2020, Scientific Reports.

Basal Plane Dislocations Created in 4H-SiC Epitaxy by Implantation and Activation Anneal

B. Hull, A. Burk, R. Stahlbush, 2015 .

Basal Plane Dislocations from Inclusions in 4H-SiC Epitaxy

M. O'loughlin, R. Stahlbush, N. Mahadik, 2014 .

Post-Growth Reduction of Basal Plane Dislocations by High Temperature Annealing in 4H-SiC Epilayers

R. Nipoti, R. Stahlbush, N. Mahadik, 2014 .

Effect of Stacking Faults Originating from Half Loop Arrays on Electrical Behavior of 10 kV 4H-SiC PiN Diodes

A. Agarwal, R. Stahlbush, Q. C. Zhang, 2012 .

Thermally Stimulated Current Separation of Hole and Acceptor Trap Density in 4H-SiC MOS Devices Using Gamma Ray Irradiation

P. McMarr, K. Hobart, R. Stahlbush, 2010 .

Thermally stimulated current separation of hole and acceptor trap density in 4H-SiC epitaxial MOS devices using gamma irradiation

P. McMarr, K. Hobart, R. Stahlbush, 2009, 2009 IEEE Nuclear Science Symposium Conference Record (NSS/MIC).

Influence of Temperature on Shockley Stacking Fault Expansion and Contraction in SiC PiN Diodes

K. Hobart, R. Stahlbush, O. Glembocki, 2008 .

Degradation of Majority Carrier Conductions and Blocking Capabilities in 4H-SiC High Voltage Devices due to Basal Plane Dislocations

A. Agarwal, S. Ryu, Qingchun Zhang, 2008 .

Influence of Shockley Stacking Fault Expansion and Contraction on the Electrical Behavior of 4H-SiC DMOSFETs and MPS diodes

A. Agarwal, M. Das, Qingchun Zhang, 2008 .

Influence of Shockley stacking fault propagation and contraction on electrical behavior of 4H-SiC pin diodes and DMOSFETs

K. Hobart, R. Stahlbush, O. Glembocki, 2007, 2007 International Semiconductor Device Research Symposium.

Observations of the influence of threading dislocations on the recombination enhanced partial dislocation glide in 4H-silicon carbide epitaxial layers

Yi Chen, M. Dudley, R. Stahlbush, 2007 .

Formation mechanism of horizontal-half-loop arrays and stacking fault expansion behavior in thick SiC epitaxial layers

R. Stahlbush, N. Mahadik, Woongje Sung, 2022, Journal of Applied Physics.

Mitigation of BPD by Pre-Epigrowth High Temperature Substrate Annealing

R. Stahlbush, C. Affouda, N. Mahadik, 2016 .

On the driving force for recombination-induced stacking fault motion in 4H–SiC

M. Ancona, K. Hobart, R. Stahlbush, 2010 .

Structure and Morphology of Inclusions in 4° Offcut 4H-SiC Epitaxial Layers

K. Hobart, R. Myers-Ward, C. Eddy, 2011 .

Spatial Localization of Carrier Traps in 4H-SiC MOSFET Devices Using Thermally Stimulated Current

A. Agarwal, P. McMarr, H. Hughes, 2010 .

Static and Dynamic Susceptibilities of Magnetic Polymers

P. D. Krasicky, R. H. Silsbee, J. C. Scott, 1981 .

Mitigating Defects within Silicon Carbide Epitaxy

R. Stahlbush, N. Mahadik, J. Caldwell, 2011 .

Chemically Assisted Ion Beam Etching of SiGe

S. Prokes, R. Stahlbush, O. Glembocki, 1990 .

Exploiting Phonon‐Resonant Near‐Field Interaction for the Nanoscale Investigation of Extended Defects

T. Taubner, R. Stahlbush, N. Bassim, 2020, Advanced Functional Materials.

Imaging Surface Pits and Dislocations in 4H-SiC by Forescattered Electron Detection and Photoluminescence

M. Twigg, R. Stahlbush, Y. Picard, 2008 .

Investigation of Electron–Hole Recombination-Activated Partial Dislocations and Their Behavior in 4H-SiC Epitaxial Layers

Xianrong Huang, D. Black, A. Macrander, 2008 .

Nondestructive dislocation delineation using topographically enhanced imaging of surface morphologies in 4H-SiC epitaxial layers

M. Skowronski, M. Twigg, R. Stahlbush, 2008 .

Determination of the Core-structure of Shockley Partial Dislocations in 4H-SiC

Xianrong Huang, Yi Chen, M. Dudley, 2008 .

Trapezoid defect in 4H–SiC epilayers

G. Chung, M. Skowronski, R. Stahlbush, 2012 .

Planar defects in 4H-SiC PiN diodes

T. Chow, J. Sumakeris, M. Twigg, 2005 .

Distribution of Ge in O+ implanted silicon

M. Twigg, R. Stahlbush, M. Zvanut, 1992 .

Spin flop in a one‐dimensional Heisenberg antiferromagnet(a)

J. C. Scott, R. Stahlbush, 1979 .

Ultraviolet Photoluminescence Imaging of Stacking Fault Contraction in 4H-SiC Epitaxial Layers

K. Hobart, R. Stahlbush, N. Mahadik, 2012 .

Vibronic spectrum of the U2 isoelectronic center in Si: In

R. Stahlbush, R. A. Forman, 1982 .

Characterization of defects in the drift region of 4H-SiC pin diodes via optical beam induced current

K. Hobart, R. Stahlbush, O. Glembocki, 2006 .

Silicon carbide pin diodes as radiation detectors

G. De Geronimo, P. O'Connor, B. Hull, 2005, IEEE Nuclear Science Symposium Conference Record, 2005.

X‐ray rocking curve measurement of composition and strain in Si‐Ge buffer layers grown on Si substrates

R. Stahlbush, M. Fatemi, 1991 .

Experimental evidence for mobile luminescence center mobility on partial dislocations in 4H-SiC using hyperspectral electroluminescence imaging

B. Hull, Khalid Moumanis, J. Dubowski, 2013 .

Whole-Wafer Mapping of Dislocations in 4H-SiC Epitaxy

J. Sumakeris, R. Stahlbush, Q. Zhang, 2007 .

Differences in emission spectra of Si- and C-core partial dislocations

S. Maximenko, R. Stahlbush, J. Caldwell, 2007 .

Photoluminescence and Electroluminescence Imaging of Carrot Defect in 4H-SiC Epitaxy

K. Hobart, M. Twigg, R. Stahlbush, 2007 .

Electron and hole trapping in irradiated SIMOX, ZMR and BESOI buried oxides

J. B. McKitterick, P. Roitman, Robert E. Stahlbush, 1992 .

Structure of stacking faults formed during the forward bias of 4H-SiC p-i-n diodes

S. Arthur, M. Twigg, R. Stahlbush, 2003 .

Turning of Basal Plane Dislocations during Epitaxial Growth on 4° Off-Axis 4H-SiC

R. Myers-Ward, C. Eddy, D. Gaskill, 2009 .

Extended Defects in 4H-SiC PiN Diodes

S. Arthur, M. Twigg, R. Stahlbush, 2002 .

Reversal of forward voltage drift in 4H-SiC p-i-n diodes via low temperature annealing

K. Hobart, R. Stahlbush, O. Glembocki, 2007 .

Nucleation mechanism of dislocation half-loop arrays in 4H-silicon carbide homoepitaxial layers

Yi Chen, M. Dudley, R. Stahlbush, 2009 .

Evolution of Basal Plane Dislocations during 4H-SiC Epitaxial Growth

M. Skowronski, K. Lew, R. Myers-Ward, 2008 .

Glide and multiplication of basal plane dislocations during 4H-SiC homoepitaxy

J. Sumakeris, M. Paisley, M. O'loughlin, 2007 .

Characteristics of Dislocation Half-Loop Arrays in 4H-SiC Homo-Epilayer

Tangali S. Sudarshan, Robert E. Stahlbush, T. Sudarshan, 2007 .

Mechanisms of Stacking Fault Growth in SiC PiN Diodes

P. Losee, J. Sumakeris, M. Twigg, 2004 .

Stacking-fault formation and propagation in 4H-SiC PiN diodes

S. Arthur, L. Rowland, R. Stahlbush, 2002 .

Extended defects that affect carrier lifetime in high blocking voltage SiC epilayers

M. O'loughlin, A. Burk, R. Stahlbush, 2011, 2011 International Semiconductor Device Research Symposium (ISDRS).

Effects of post-stress hydrogen annealing on MOS oxides after /sup 60/Co irradiation or Fowler-Nordheim injection

B. J. Mrstik, Robert E. Stahlbush, Ronald W. Rendell, 1993 .

Observation of a multilayer planar in-grown stacking fault in 4H-SiC p-i-n diodes

Orest J. Glembocki, Fritz J. Kub, Karl D. Hobart, 2006 .

Depth Profiling of Carrier Lifetime in Thick 4H-SiC Epilayers Using Two-Photon Absorption

S. Buchner, P. Klein, R. Stahlbush, 2018, Materials Science Forum.

Nucleation of in-grown stacking faults and dislocation half-loops in 4H-SiC epitaxy

M. Skowronski, V. Wheeler, R. Myers-Ward, 2013 .

Effects of Nitrogen Doping on Basal Plane Dislocation Reduction in 8° Off-Cut 4H-SiC Epilayers

M. Skowronski, V. Wheeler, R. Myers-Ward, 2011 .

Basal plane dislocation reduction for 8° off-cut, 4H-SiC using in situ variable temperature growth interruptions

K. Lew, R. Myers-Ward, C. Eddy, 2008 .

Partial dislocations and stacking faults in 4H-SiC PiN diodes

S. Arthur, M. Twigg, R. Stahlbush, 2004 .

Microstructure of heteroepitaxial GaN grown on mesa-patterned 4H-SiC substrates

P. Neudeck, C. Eddy, M. Twigg, 2004 .

Growth Evolution of Gallium Nitride Films on Stepped and Step-Free SiC Surfaces

P. Neudeck, C. Eddy, M. Twigg, 2003 .

Annealing of total dose damage: redistribution of interface state density on [100], [110] and [111] orientation silicon

H. L. Hughes, N. S. Saks, R. K. Lawrence, 1988 .

Electroluminescence Spectral Imaging of Extended Defects in 4H-SiC

B. Hull, K. Hobart, R. Stahlbush, 2010 .

Stacking Fault Formation Sites and Growth in Thick-Epi SiC PiN Diodes

T. Chow, P. Losee, J. Sumakeris, 2004 .

Effects of Basal Plane Dislocations on SiC Power Device Reliability

A. Lelis, R. Stahlbush, R. Green, 2018, 2018 IEEE International Electron Devices Meeting (IEDM).

Gettering of Luminescent Point Defects along Step Bunching in 4H-SiC Epitaxial Layers by Ultraviolet Excitation

R. Stahlbush, N. Mahadik, 2015, Journal of Electronic Materials.

Recombination-induced stacking fault degradation of 4H-SiC merged-PiN-Schottky diodes

Anant K. Agarwal, Marko J. Tadjer, Karl D. Hobart, 2009 .

4H-SiC Epitaxy with Very Smooth Surface and Low Basal Plane Dislocation on 4 Degree Off-Axis Wafer

Jie Zhang, M. Loboda, G. Chung, 2011 .

Examination of In-Grown Stacking Faults in 8°- and 4°-Offcut 4H-SiC Epitaxy by Photoluminescence Imaging

K. Lew, R. Myers-Ward, C. Eddy, 2008 .

Spontaneous Conversion of Basal Plane Dislocations in 4° Off-Axis 4H–SiC Epitaxial Layers

K. Hobart, V. Wheeler, R. Myers-Ward, 2014 .

Observation of stacking faults from basal plane dislocations in highly doped 4H-SiC epilayers

M. Ancona, K. Hobart, R. Myers-Ward, 2012 .

Formation and propagation mechanism of complex stacking fault in 180 μm thick 4H-SiC epitaxial layers

M. Dudley, R. Stahlbush, B. Raghothamachar, 2023, Scripta Materialia.

Overlapping Shockley/Frank Faults in 4H-SiC PiN Diodes

T. Chow, P. Losee, M. Twigg, 2006 .

Stacking-fault formation and propagation in 4H-SiC PiN diodes

S. Arthur, L. Rowland, R. Stahlbush, 2002 .

Correlation of Extended Defects on Carrier Lifetime in Thick SiC Epilayers

M. O'loughlin, A. Burk, R. Stahlbush, 2012 .

Influence of Shockley Stacking Fault Generation on Electrical Behavior of 4H-SiC 10 kV MPS Diodes

A. Agarwal, J. Palmour, M. O'loughlin, 2010 .

Impact of 4H-SiC Substrate Defectivity on Epilayer Injected Carrier Lifetimes

P. Klein, K. Lew, R. Myers-Ward, 2008 .

A Pictorial Tracking of Basal Plane Dislocations in SiC Epitaxy

R. Myers-Ward, C. Eddy, D. Gaskill, 2010 .

Propagation of Current-Induced Stacking Faults and Forward Voltage Degradation in 4H-SiC PiN Diodes

S. D. Arthur, James W. Kretchmer, Robert E. Stahlbush, 2002 .

Use of atomic layer epitaxy buffer for the growth of InSb on GaAs by molecular beam epitaxy

P. Thompson, R. Stahlbush, D. Gammon, 1991 .

Differences in Emission Spectra of Dislocations in 4H-SiC Epitaxial Layers

M. Skowronski, R. Stahlbush, J. Caldwell, 2008 .

Light emission from interface traps and bulk defects in SiC MOSFETs

R. Stahlbush, P. J. Macfarlane, 2001 .

Light emission from 4H SiC MOSFETs with and without NO passivation

L. Feldman, G. Chung, K. McDonald, 2001 .

Characterization of Light Emission from 4H and 6H SiC MOSFETs

R. Stahlbush, P. J. Macfarlane, 2000 .

Trapping dependent H+ motion in SIMOX buried oxides

R. Stahlbush, P. J. Macfarlane, 2001 .

Optoelectronic and structural characterization of trapezoidal defects in 4H-SiC epilayers and the effect on MOSFET reliability

B. Gorman, H. Guthrey, A. Norman, 2023, Journal of Applied Physics.

SIMOX with epitaxial silicon: point defects and positive charge

H. Hughes, W. Carlos, R. Stahlbush, 1991 .

Thermal Annealing and Propagation of Shockley Stacking Faults in 4H-SiC PiN Diodes

K. Hobart, R. Stahlbush, O. Glembocki, 2007 .

Optical, Electrical and Lifetime Characterization of In-Grown Stacking Faults in 4H-SiC

P. Klein, K. Hobart, R. Stahlbush, 2006 .

Non-Destructive Electro- and Photo-Luminescence Imaging of Dislocations in SiC Epitaxy

J. Sumakeris, K. Hobart, R. Stahlbush, 2006 .

On the Luminescence and Driving Force of Stacking Faults in 4H-SiC

B. Hull, M. Ancona, K. Hobart, 2010 .

Epitaxial Growth on 2° Off-axis 4H SiC Substrates with Addition of HCl

Janna R. B. Casady, Jie Zhang, M. Mazzola, 2008 .

Effect of Recombination-Induced Stacking Faults on Majority Carrier Conduction and Reverse Leakage Current on 10 kV SiC DMOSFETs

Anant K. Agarwal, Robert E. Stahlbush, Fatima Husna, 2008 .

Dynamics of Forward Voltage Drift in 4H-SiC PiN Diodes

K. Hobart, R. Stahlbush, O. Glembocki, 2008 .

Geometric components of charge pumping current in SOS devices

W. Richards, R. Stahlbush, R. Lawrence, 1989 .

Interaction between Recombination Enhanced Dislocation Glide Process Activated Basal Stacking Faults and Threading Dislocations in 4H-Silicon Carbide Epitaxial Layers

Yi Chen, M. Dudley, R. Stahlbush, 2007 .