P. Martin

发表

Electric field enhanced emission from non‐Coulombic traps in semiconductors

Karl Hess, B. G. Streetman, K. Hess, 1981 .

A Surface-Potential-Based Compact Model of AlGaN/GaN HEMTs Power Transistors

L. Lucci, L. Lucci, P. Martin, 2013 .

Materials and Device Characteristics of InAlAs/InGaAs HEMTs

K. C. Hwang, P. Ho, P. Chao, 1992 .

Pseudomorphic InGaAs high electron mobility transistors

P. Chao, P. Smith, P. Ho, 1993 .

Transient capacitance spectroscopy on large quantum well heterostructures

N. Holonyak, K. Hess, J. Coleman, 1983 .

MOMBE GaAs and AlGaAs for microelectronic devices

J. Ballingall, S. Hersee, A. Chin, 1992 .

Post-growth diffusion of be doped ingaas epitaxial layers: experimental and simulated distributions

P. Martin, K. Ketata, J. Marcon, 1996 .

Temperature dependence of photoluminescence linewidth in modulation‐doped pseudomorphic high electron mobility transistor AlxGa1−xAs/InyGa1−yAs/GaAs structures

T. Rogers, J. Ballingall, B. Jogai, 1994 .

Be diffusion in InGaAs layers grown by gas source molecular beam epitaxy

P. Martin, C. Dubois, K. Ketata, 1998 .

The growth of high‐quality AlGaAs by metalorganic molecular‐beam epitaxy

J. Ballingall, S. Hersee, A. Chin, 1991 .

Deep-level transient spectroscopy studies of defects in GaAs-AlGaAs superlattices

K. Hess, J. Coleman, P. Martin, 1986 .

Improved device performance by migration-enhanced epitaxy

S. C. Wang, P. Ho, J. Ballingall, 1991 .

Materials characteristics of pseudomorphic high electron mobility transistor structures with InxGa1−xas single quantum well and GaAs-InxGa1−xas (0.25 < x < 0.4) thin strained superlattice active layers

P. Ho, J. Ballingall, P. Martin, 1990 .

Displacement Damage Effects in AlGaN/GaN High Electron Mobility Transistors

J. B. Boos, C. Cress, P. Martin, 2012, IEEE Transactions on Nuclear Science.