J. J. Mele

Predicting radiation response from process parameters: Verification of a physically based predictive model

John F. Conley, Patrick M. Lenahan, R. K. Lowry, 1999 .

Direct experimental evidence linking silicon dangling bond defects to oxide leakage currents

Patrick M. Lenahan, S. T. Liu, Jason P. Campbell, 2001, 2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167).

Leakage currents and silicon dangling bonds in amorphous silicon dioxide thin films

P. Lenahan, J. J. Mele, R. Lowry, 2000 .

Identification of atomic scale defects involved in oxide leakage currents

S. T. Liu, Jason P. Campbell, P. Lenahan, 2000, 2000 IEEE International Integrated Reliability Workshop Final Report (Cat. No.00TH8515).

E′ centers and leakage currents in the gate oxides of metal oxide silicon devices

P. Lenahan, J. J. Mele, 2000 .