T. Abe

发表

Multiple internal reflection infrared spectroscopy of silicon surface structure and oxidation process at room temperature

Takao Abe, L. Ling, S. Kuwabara, 1993 .

Swirl defects in float-zoned silicon crystals

T. Abe, H. Harada, J. Chikawa, 1983 .

Characterization of bond and etch-back silicon-on-insulator wafers by photoluminescence under ultraviolet excitation

T. Abe, M. Tajima, S. Ibuka, 1997 .

Surface Impurities Encapsulated by Silicon Wafer Bonding

T. Ohmi, M. Miyawaki, T. Abe, 1990 .

Silicon Wafer Bonding Mechanism for Silicon-on-Insulator Structures

T. Abe, Atsuo Uchiyama, K. Yoshizawa, 1990 .

The effect of bonded interface on electrical properties of bonded silicon‐on‐insulator wafers

L. Ling, T. Abe, F. Shimura, 1992 .

The effects of polishing damage and oxygen concentration on gate oxide integrity in silicon crystals

T. Abe, Yuichiro Kato, 1993 .

Fabrication and Bonding Strength of Bonded Silicon-Quartz Wafers

Takao Abe, Yasuyuki Nakazato, T. Abe, 1993 .

Temperature dependence of minority‐carrier lifetime in iron‐diffused p‐type silicon wafers

T. Abe, F. Shimura, Y. Hayamizu, 1991 .

Suppression of light degradation of carrier lifetimes in low-resistivity CZ–Si solar cells

T. Warabisako, T. Saitoh, S. Glunz, 2001 .

Observations of secondary defects and vacancies in CZ silicon crystals detached from melt using four different types of characterization technique

T. Abe, K. Shirai, T. Takahashi, 2016 .

Investigations of interstitial generations near growth interface depending on crystal pulling rates during CZ silicon growth by detaching from the melt

T. Abe, K. Shirai, T. Takahashi, 2016 .

Fabrication and Bonding Strength of Bonded Silicon-Quartz Wafers

T. Abe, Atsuo Uchiyama, K. Yoshizawa, 1992 .

Wafer Bonding Technology for Soi Applications: A Review

T. Abe, K. Mitani, 1992, 1992 IEEE International SOI Conference.

Annealing behavior of oxygen in-diffusion from SiO2 film to silicon substrate

T. Abe, H. Yamada‐Kaneta, 2004 .

A New Approach of Photonic Bandgap Formation -Wafer Bonding and Delamination Technique-

L. Kimerling, K. Wada, T. Abe, 1998 .

The effect of mass transfer on the temperature gradient of a crystal growing from melt

T. Abe, K. Shirai, 2012 .

Microroughness Measurements on Polished Silicon Wafers

E. F. Steigmeier, T. Abe, A. Pidduck, 1992 .

Effect of point defects on oxygen aggregation in Si at 450 °C

M. Warashina, T. Abe, M. Tajima, 1994 .

The growth of Si single crystals from the melt and impurity incorporation mechanisms

T. Abe, 1974 .

Diffusion coefficient of a pair of nitrogen atoms in float‐zone silicon

T. Abe, T. Itoh, 1988 .

Calibration curve for infrared spectrophotometry of nitrogen in silicon

T. Abe, Y. Itoh, T. Nozaki, 1985 .

Mechanism for generating interstitial atoms by thermal stress during silicon crystal growth

Toru Takahashi, T. Abe, K. Shirai, 2019, Progress in Crystal Growth and Characterization of Materials.

X‐ray topographic observation of moving dislocations in silicon crystals

T. Abe, J. Chikawa, I. Fujimoto, 1972 .

Effects of nitrogen on dislocation behavior and mechanical strength in silicon crystals

Takao Abe, Koji Sumino, Masato Imai, 1983 .

Deep Levels Associated with Nitrogen in Silicon

H. Okushi, T. Abe, Y. Tokumaru, 1982 .

Etch Pits Observed in Dislocation-Free Silicon Crystals

T. Abe, S. Maruyama, Takahide Samizo, 1966 .

Intrinsic point defect behavior in silicon crystals during growth from the melt: A model derived from experimental results

Toru Takahashi, T. Abe, 2011 .

Generation and annihilation of point defects by doping impurities during FZ silicon crystal growth

T. Abe, 2011 .

Silicon: Microdefects in As-grown Crystals

T. Abe, 2001 .

The formation mechanism of grown-in defects in CZ silicon crystals based on thermal gradients measured by thermocouples near growth interfaces

T. Abe, 2000 .

Elimination of secondary defects in As‐implanted Si by high concentration oxygen atoms

M. Horiuchi, T. Ito, T. Abe, 1988 .

Self-Diffusion in Intrinsic and Extrinsic Silicon Using Isotopically Pure 30Silicon/Natural Silicon Heterostructures

K. Wada, Y. Nakabayashi, T. Abe, 2003 .

Deep Level Generation-Annihilation in Nitrogen Doped FZ Crystals

T. Abe, K. Adomi, H. Harada, 1985 .

Microdefects and Impurities in Dislocation-Free Silicon Crystals

T. Abe, H. Harada, J. Chikawa, 1982 .

Dynamic Behavior of Intrinsic Point Defects in Fz and Cz Silicon Crystals

T. Abe, H. Takeno, 1992 .

Nitrogen-Oxygen Complexes as Shallow Donors in Silicon Crystals

Takao Abe, Koji Sumino, T. Abe, 1986 .

Photoluminescence Associated with Nitrogen in Silicon

T. Abe, M. Tajima, T. Nozaki, 1981 .

100 cm2 solar cells on Czochralski silicon with an efficiency of 20·2%

S. Glunz, S. Rein, J. Knobloch, 2000 .

Grown-in Microdefects in a Slowly Grown Czochralski Silicon Crystal Observed by Synchrotron Radiation Topography

H. Kawata, T. Abe, S. Iida, 2000 .

Growth characteristics of oxide precipitates in heavily doped silicon crystals

T. Abe, H. Harada, S. Matsumoto, 1985 .

Radiation-resistant properties of Ga-doped Si analyzed by DLTS

M. Yamaguchi, Aurangzeb Khan, Y. Ohshita, 2003 .

Role of the impurities in production rates of radiation-induced defects in silicon materials and solar cells

T. Ohshima, K. Araki, M. Yamaguchi, 2001 .

Influence of the dopant species on radiation-induced defects in Si single crystals

M. Yamaguchi, Aurangzeb Khan, M. Kaneiwa, 2000 .

Impact of Boron and Gallium on Defects Production in Silicon

K. Araki, M. Yamaguchi, M. Imaizumi, 2000 .

Comparison of boron- and gallium-doped p- type Czochralski silicon for photovoltaic application

S. Glunz, S. Rein, J. Knobloch, 1999 .

Determination of diffusivities of Si self-diffusion and Si self-interstitials using isotopically enriched single-or multi-30Si epitaxial layers

Y. Shimamune, K. Wada, Y. Nakabayashi, 2005 .

Si self-diffusivity using isotopically pure 30Si epitaxial layers

Y. Shimamune, K. Wada, Y. Nakabayashi, 2004 .

Determination of Silicon self-interstitial diffusivity using isotopically pure 30Silicon multi-layer

K. Wada, Y. Nakabayashi, T. Abe, 2004 .

The Nature of Nitrogen-Oxygen Complexes in Silicon

T. Abe, H. Harada, M. Suezawa, 1988 .

Characterization of Residual Impurities in Highly Pure Si Crystals by Photoluminescence Technique

T. Abe, M. Tajima, A. Yusa, 1979 .

Type and charge states of point defects in heavily As- and B-doped silicon

K. Wada, Y. Nakabayashi, T. Abe, 2003 .

Proceedings of the Third International Symposium on Defects in Silicon

T. Abe, 1999 .

Effect of light degradation on bifacial Si solar cells

T. Warabisako, T. Saitoh, Y. Yazawa, 2001 .

Semiconductor Wafer Bonding: Science Technology, and Applications VI

Stefan Bengtsson, Helmut Baumgart, Charles E. Hunt, 2001 .

Deep‐level transient spectroscopy on p‐type silicon crystals containing tungsten impurities

T. Abe, C. Munakata, S. Isomae, 1991 .

In-diffusion of nitrogen from N2 ambient and its aggregation at lattice imperfections in silicon crystals

T. Abe, T. Itoh, Y. Hayamizu, 1989 .

Silicon Wafer-Bonding Process Technology for SOI Structures

Takao Abe, Yasuyuki Nakazato, T. Abe, 1990 .

Bonded SOI technologies for high voltage applications

T. Abe, M. Katayama, 1996, 8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings.