C. Ling

B. Cho, Sun Jung Kim, C. Ling, 1999, Proceedings of the 1999 7th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.99TH8394).

A time-dependent technique for carrier recombination and generation lifetime measurement in SOI MOSFET

Gang Zhang, C. Ling, W. Yoo, 2008 .

Study of hot-carrier degradation in submicrometer LDD NMOSFETs from 1/f noise and charge pumping current measurements at different temperature anneals

D. Ang, C. Ling, Y. Yeow, 1995 .

Radiation and electrical stress-induced hole trap-assisted tunneling currents in ultrathin gate oxides

C. Ang, B. Cho, Z. Cheng, 2000 .

Arriving at a unified model for hot-carrier degradation in MOSFET's through gate-to-drain capacitance measurement

M. K. Alam, C. Ling, Y. Yeow, 1994 .

Characterization of charge trapping in submicrometer NMOSFET's by gate capacitance measurements

C. Ling, Y. Yeow, L. Ah, 1992, IEEE Electron Device Letters.

The effects of polysilicon dopant depletion and Fowler - Nordheim tunnelling on the characteristics of ? polysilicon - oxide - silicon capacitors

D. Ang, C. Ling, J. A. Ooi, 1997 .

Charge trapping in interpoly ONO film

C. Ling, K. Lim, 1998, ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187).

Identification of Fixed and Interface Trap Charges in Hot-Carrier Stressed Metal Oxide Semiconductor Field effect Transistors (MOSFET's) through Ultraviolet Light Anneal and Gate Capacitance Measurements.

C. Ling, 1995 .

Observation of current spikes in thin oxide MOS capacitor

C. Ling, Y. Yeow, L. Ah, 1994 .

Electron Trapping and Interface State Generation in PMOSFET's: Results from Gate Capacitance

C. Ling, 1993 .

Frequency dependence of MOS capacitance in strong inversion and at elevated temperatures

C. Ling, E. Chan, T. M. Tay, 1986 .

Plasma-enhanced chemical vapour deposited SiN films: bulk charge, interface trapping and polarization

C. Ling, C. Kwok, 1988 .

Study of rf‐sputtered yttrium oxide films on silicon by capacitance measurements

W. K. Choi, J. Bhaskaran, C. Ling, 1995 .

Close correspondence between forward gated-diode and charge pumping currents observed in hot-carrier stressed PMOSFETs

C. Ling, Y. H. Goh, 1997 .

Hot carrier degradation study in PMOSFET using gated-diode drain current and charge pumping measurements

C. Ling, Y. H. Goh, 1996, ICSE '96. 1996 IEEE International Conference on Semiconductor Electronics. Proceedings.

Bias and thermal annealings of radiation-induced leakage currents in thin-gate oxides

C. Ang, B. Cho, Z. Cheng, 2000 .

High field conduction in thin indium antimonide films

J. Anderson, C. Ling, 1973 .

A model for minority carrier lifetime variation in the oxide–silicon structure following 253.7 nm ultraviolet irradiation

Z. Cheng, C. Ling, 1998 .

Computation of electron and hole quasi-Fermi levels in polycrystalline silicon films under uniform illumination and zero bias

C. Ling, 1985 .

A diffusion model for carrier transport in a polycrystalline film

C. Ling, 1984 .

Electron and hole quasi-fermi levels in the vicinity of a grain boundary under uniform illumination: An approximate method of computation

C. Ling, C. Kwok, 1985 .

On the mobility dip in polycrystalline silicon

C. Ling, 1983 .

Trap generation at Si/SiO2 interface in submicrometer metal‐oxide‐semiconductor transistors by 4.9 eV ultraviolet irradiation

C. Ling, 1994 .

Trap generation in CVD SiO2 subjected to 253.7 nm ultraviolet irradiation

C. Ling, Z. Y. Cheng, 1997 .

An improved analysis for the determination of trap levels in silicon from laser microwave photoconductive decay measurements

Z. Cheng, C. Ling, 1997 .

A comprehensive study of indium implantation-induced damage in deep submicrometer nMOSFET: device characterization and damage assessment

D. Ang, C. Ling, H. Liao, 2002 .

Generation-recombination noise in the near fully depleted SIMOX SOI n-MOSFET - physical characteristics and modeling

D. S. Ang, C. H. Ling, D. Ang, 2003 .

A novel subthreshold slope technique for the extraction of the buried-oxide interface trap density in the fully depleted SOI MOSFET

D. Ang, C. Ling, Z. Lun, 2000, IEEE Electron Device Letters.

Comparison of Fowler-Nordheim stress on tungsten polycided and non-polycided MOS capacitors

C. Ling, J. A. Ooi, 1996, ICSE '96. 1996 IEEE International Conference on Semiconductor Electronics. Proceedings.

Effects of tungsten silicidation on Fowler-Nordheim tunnelling current and charge trapping in polysilicon-oxide-silicon capacitors

D. Ang, C. Ling, J. A. Ooi, 1996 .

Interfacial polarisation in Al-Y/sub 2/O/sub 3/-SiO/sub 2/-Si capacitor

C. H. Ling, C. Ling, 1993 .

STI-induced damage and hot-carrier reliability in the narrow width short channel NMOSFET fabricated using global strained-Si technology

K. Chui, D. Ang, C. Ling, 2005, Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005..

Generation-recombination noise in the near fully depleted SIMOX N-MOSFET operating in the linear region

D. Ang, C. Ling, D.S. Ang, 2001, IEEE Electron Device Letters.

Evidence of two distinct degradation mechanisms from temperature dependence of negative bias stressing of the ultrathin gate p-MOSFET

D. Ang, C. Ling, S. Wang, 2005, IEEE Electron Device Letters.