M. Shimaya

Interface‐trap generation at ultrathin SiO2 (4–6 nm)‐Si interfaces during negative‐bias temperature aging

Shigeo Ogawa, M. Shimaya, N. Shiono, 1995 .

Water diffusion model for the enhancement of hot-carrier-induced degradation due to silicon nitride passivation in submicron MOSFET's

M. Shimaya, M. Shimaya, 1995, Proceedings of 1995 IEEE International Reliability Physics Symposium.

Bubble state stability in field access devices

M. Shimaya, K. Narita, S. Konishi, 1979 .

Discrimination of domain wall states by bubble collapse time

M. Shimaya, K. Narita, S. Konishi, 1979 .

Reduction of Electron‐Beam‐Induced Damage in MOS Devices Using Three‐Layer Resist with Heavy Metal Interlayer

O. Nakajima, M. Shimaya, C. Hashimoto, 1984 .

Total-dose effects of gamma-ray irradiation on CMOS/SIMOX devices

N. Shiono, M. Shimaya, T. Ohno, 1987, IEEE Circuits and Devices Magazine.

The influence of stud bumping stress on device degradation in scaled MOSFETs

M. Shimaya, H. Kyuragi, N. Shimoyama, 1999, 1999 IEEE International Reliability Physics Symposium Proceedings. 37th Annual (Cat. No.99CH36296).

Suppressing the parasitic bipolar action in fully-depleted MOSFETs/SIMOX by using back-side bias-temperature treatment

T. Tsuchiya, M. Shimaya, H. Koizumi, 1998 .

Ionizing Radiation Effects in MOS Capacitors with Very Thin Gate Oxides

M. Shimaya, N. Shiono, K. Sano, 1983 .

Electron Beam Induced Damage in Poly‐Si Gate MOS Structures and Its Effect on Long‐Term Stability

O. Nakajima, M. Shimaya, N. Shiono, 1983 .

Neutral electron trap generation in SiO2 by hot holes

Masakazu Shimaya, Shigeo Ogawa, Shigeo Ogawa, 1990 .