N. Shiono

发表

Interface‐trap generation at ultrathin SiO2 (4–6 nm)‐Si interfaces during negative‐bias temperature aging

Shigeo Ogawa, M. Shimaya, N. Shiono, 1995 .

Threshold-voltage instability of n-channel MOSFET's under bias-temperature aging

N. Shiono, C. Hashimoto, 1982, IEEE Transactions on Electron Devices.

Interface‐trap generation induced by hot‐hole injection at the Si‐SiO2 interface

Shigeo Ogawa, N. Shiono, 1992 .

Kinetics of Changes in N f and D it at the Si ‐ SiO2 Interface under Long‐Term Positive as well as Negative Bias‐Temperature Aging

O. Nakajima, N. Shiono, C. Hashimoto, 1983 .

Oxide defects originating from Czochralski silicon substrates

O. Nakajima, M. Itsumi, N. Shiono, 1992 .

Surface State Formation during Long-Term Bias-Temperature Stress Aging of Thin SiO2–Si Interfaces

N. Shiono, Noboru Shiono, Takehisa Yashiro, 1979 .

A lifetime projection method using series model and acceleration factors for TDDB failures of thin gate oxides

N. Shiono, M. Itsumi, N. Shiono, 1993, 31st Annual Proceedings Reliability Physics 1993.

Total-dose effects of gamma-ray irradiation on CMOS/SIMOX devices

N. Shiono, M. Shimaya, T. Ohno, 1987, IEEE Circuits and Devices Magazine.

Generalized diffusion-reaction model for the low-field charge-buildup instability at the Si-SiO2 interface.

Ogawa, Shiono, Shigeo Ogawa, 1995, Physical review. B, Condensed matter.

Ionizing Radiation Effects in MOS Capacitors with Very Thin Gate Oxides

M. Shimaya, N. Shiono, K. Sano, 1983 .

Electron Beam Induced Damage in Poly‐Si Gate MOS Structures and Its Effect on Long‐Term Stability

O. Nakajima, M. Shimaya, N. Shiono, 1983 .

Defects in a Gate Oxide Grown after the LOCOS Process

Osaake Nakajima, Chisato Hashimoto, Susumu Muramoto, 1979 .

Neutral electron trap generation in SiO2 by hot holes

Masakazu Shimaya, Shigeo Ogawa, Shigeo Ogawa, 1990 .

Si-SiO 2 interface state generation at the surface potential of 0.4 and 0.7 eV

M. Itsumi, M. Shimaya, N. Shiono, 1995 .