V. Pershenkov

发表

Three-point method of prediction of MOS device response in space environments

V. V. Belyakov, Viacheslav S. Pershenkov, S. V. Cherepko, 1993 .

Fast switched-bias annealing of radiation-induced oxide-trapped charge and its application for testing of radiation effects in MOS structures

V. Pershenkov, V. Belyakov, A. Shalnov, 1994 .

Proposed two-level Acceptor-Donor (AD) center and the nature of switching traps in irradiated MOS structures

A. V. Sogoyan, Viacheslav S. Pershenkov, S. V. Cherepko, 1996 .

IC’s radiation effects modeling and estimation

A. V. Sogoyan, P. K. Skorobogatov, V. Pershenkov, 2000 .

Mechanism of the Saturation of the Radiation Induced Interface Trap Buildup

A. V. Solomatin, V. Pershenkov, V. Belyakov, 2014 .

TID Effects in One Time Programmable Read Only Memory at Different Dose Rates

V. Pershenkov, D. Boychenko, V. Felitsyn, 2018, 2018 IEEE Nuclear & Space Radiation Effects Conference (NSREC 2018).

The use of conversion model for CMOS IC prediction in space environments

I. N. Shvetzov-Shilovsky, V. Emelyanov, V. Pershenkov, 1996 .

Thermal- and radiation-induced interface traps in MOS devices

V. Pershenkov, S. Cherepko, V. N. Ulimov, 1997, RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294).

Effect of emitter-base bias during pre-irradiation infrared illumination on the radiation response of bipolar transistors

A. Y. Bashin, S. Avdeev, V. Pershenkov, 2002 .

Fast techniques for MOSFET response prediction in space environments

I. N. Shvetzov-Shilovsky, V. Pershenkov, V. Belyakov, 1995, Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems.

The improvement of MOSFET prediction in space environments using the conversion model

I. N. Shvetzov-Shilovsky, V. Pershenkov, S. Cherepko, 1994 .

Management of Ionization Source Based on a Pulsed Corona Discharge

Dmitry Yakovlev, Igor Ivanov, Nikolay N. Samotaev, 2015, IoT 360.

Modeling the field and thermal dependence of radiation-induced charge annealing in MOS devices

O. V. Meshurov, V. Pershenkov, V. N. Ulimov, 1996 .

Detection of Trace Concentration of Explosives on Human Fingers and Documents Using Ion Mobility Spectroscopy

D. Y. Lipatov, V. Pershenkov, V. Belyakov, 2014 .

System for Synchronous Detection Trace of Explosives and Drags Substances on Human Fingers

V. Pershenkov, V. Belyakov, N. Samotaev, 2015 .

Ionizing Radiation Dose Sensor Based on n-channel MOSFET

V. Pershenkov, V. Belyakov, V. Felitsyn, 2019, IFMBE Proceedings.