J. Kauppila

发表

Effects of Total-Ionizing-Dose Irradiation on Single-Event Response for Flip-Flop Designs at a 14-/16-nm Bulk FinFET Technology Node

L. Massengill, B. Bhuva, H. Zhang, 2018, IEEE Transactions on Nuclear Science.

Analysis of TID Process, Geometry, and Bias Condition Dependence in 14-nm FinFETs and Implications for RF and SRAM Performance

J. S. Kauppila, D. R. Ball, T. D. Haeffner, 2017, IEEE Transactions on Nuclear Science.

Irradiation and Temperature Effects for a 32 nm RF Silicon-on-Insulator CMOS Process

J. S. Kauppila, T. D. Haeffner, A. L. Sternberg, 2014, IEEE Transactions on Nuclear Science.

Sensitivity of High-Frequency RF Circuits to Total Ionizing Dose Degradation

J. S. Kauppila, T. D. Haeffner, L. W. Massengill, 2013, IEEE Transactions on Nuclear Science.

Effect of Device Variants in 32 nm and 45 nm SOI on SET Pulse Distributions

T. D. Loveless, M. Alles, E. Zhang, 2013, IEEE Transactions on Nuclear Science.

Persistent Laser-Induced Leakage in a 20 nm Charge-Pump Phase-Locked Loop (PLL)

T. D. Loveless, W. T. Holman, Y. P. Chen, 2017, IEEE Transactions on Nuclear Science.

Single-Event Upsets in a 7-nm Bulk FinFET Technology With Analysis of Threshold Voltage Dependence

L. Massengill, D. Ball, B. Narasimham, 2021, IEEE Transactions on Nuclear Science.

THE DESIGN OF SINGLE-EVENT HARDENED BIAS CIRCUITS By Raymond W. Blaine Thesis

J. Kauppila, S. Armstrong, T. Holman, 2011 .

Efficient Method for Estimating the Characteristics of Radiation-Induced Current Transients

J. S. Kauppila, R. D. Schrimpf, R. A. Reed, 2012, IEEE Transactions on Nuclear Science.

OF HEAVY-ION INDUCED SINGLE EVENT TRANSIENTS IN 32 nm AND 45 nm SILICON-ON-INSULATOR TECHNOLOGIES

Lloyd W. Massengill, Tim Holman, Daniel Loveless, 2014 .

Modeling COTS System TID Response With Monte Carlo Sampling and Transistor Swapping Experiments

M. B. Smith, peixiong zhao, N. Mahadevan, 2021, IEEE Transactions on Nuclear Science.

Single-Event Upset Characterization of Common First- and Second-Order All-Digital Phase-Locked Loops

T. D. Loveless, W. T. Holman, Y. P. Chen, 2017, IEEE Transactions on Nuclear Science.

Exploiting SEU Data Analysis to Extract Fast SET Pulses

R. C. Harrington, M. Alles, E. Zhang, 2019, IEEE Transactions on Nuclear Science.

Single-Event Latchup in a 7-nm Bulk FinFET Technology

L. Massengill, D. Ball, B. Bhuva, 2021, IEEE Transactions on Nuclear Science.

Single-Event-Hardened CMOS Operational Amplifier Design

Jeffrey S. Kauppila, T. Daniel Loveless, Lloyd W. Massengill, 2011, IEEE Transactions on Nuclear Science.

Probabilistic Evaluation of Analog Single Event Transients

J.S. Kauppila, A.V. Kauppila, A. V. Kauppila, 2007, IEEE Transactions on Nuclear Science.

Frequency-domain analysis of analog single-event transients (ASETs) based on energy spectral density

J.S. Kauppila, A.V. Kauppila, A. V. Kauppila, 2004, IEEE Transactions on Nuclear Science.

Circuit-Level Layout-Aware Single-Event Sensitive-Area Analysis of 40-nm Bulk CMOS Flip-Flops Using Compact Modeling

J. S. Kauppila, D. R. Ball, T. D. Haeffner, 2011, IEEE Transactions on Nuclear Science.

Radiation hardness of FDSOI and FinFET technologies

J. S. Kauppila, D. R. Ball, L. W. Massengill, 2011, IEEE 2011 International SOI Conference.

Dual-Interlocked Logic for Single-Event Transient Mitigation

J. S. Kauppila, J. A. Maharrey, R. C. Harrington, 2018, IEEE Transactions on Nuclear Science.

Effect of Transistor Variants on Single-Event Transients at the 14-/16-nm Bulk FinFET Technology Generation

J. S. Kauppila, D. R. Ball, J. A. Maharrey, 2018, IEEE Transactions on Nuclear Science.

Impact of Single-Event Transient Duration and Electrical Delay at Reduced Supply Voltages on SET Mitigation Techniques

J. S. Kauppila, D. R. Ball, J. A. Maharrey, 2018, IEEE Transactions on Nuclear Science.

Single event Simulation methodology for analog/mixed signal design hardening

W.T. Holman, L.W. Massengill, J.S. Kauppila, 2004, IEEE Transactions on Nuclear Science.

A System-Level Modeling Approach for Simulating Radiation Effects in Successive-Approximation Analog-to-Digital Converters

Gabor Karsai, En Xia Zhang, Ronald D. Schrimpf, 2021, IEEE Transactions on Nuclear Science.

A Bias-Dependent Single-Event Compact Model Implemented Into BSIM4 and a 90 nm CMOS Process Design Kit

J. Holmes, L.W. Massengill, O.A. Amusan, 2009, IEEE Transactions on Nuclear Science.

System-level Uncertainty Quantification from Component-level Radiation Effects

G. Karsai, N. Mahadevan, A. Witulski, 2021, 2021 21th European Conference on Radiation and Its Effects on Components and Systems (RADECS).

Impact of Process Variations on SRAM Single Event Upsets

A V Kauppila, B L Bhuva, J S Kauppila, 2011, IEEE Transactions on Nuclear Science.

The Impact of Charge Collection Volume and Parasitic Capacitance on SEUs in SOI- and Bulk-FinFET D Flip-Flops

J. S. Kauppila, D. R. Ball, J. A. Maharrey, 2018, IEEE Transactions on Nuclear Science.

Combined Effects of Total Ionizing Dose and Temperature on a K-Band Quadrature LC-Tank VCO in a 32 nm CMOS SOI Technology

T. D. Loveless, E. Zhang, D. Fleetwood, 2017, IEEE Transactions on Nuclear Science.

Simulation of Transistor-Level Radiation Effects on System-Level Performance Parameters

H. Barnaby, peixiong zhao, R. Reed, 2019, IEEE Transactions on Nuclear Science.

Total Dose Measurement Circuit Design Based on a Voltage Reference Topology

W. T. Holman, B.L. Bhuva, A.F. Witulski, 2017, IEEE Transactions on Nuclear Science.

Proton Irradiation as a Screen for Displacement-Damage Sensitivity in Bipolar Junction Transistors

Jeffrey S. Kauppila, Ronald D. Schrimpf, Daniel M. Fleetwood, 2015, IEEE Transactions on Nuclear Science.