O. Duhamel

发表

Total ionizing dose effects in multiple-gate field-effect transistor

M. Martinez, P. Paillet, C. Marcandella, 2017 .

High Total Ionizing Dose and Temperature Effects on Micro- and Nano-Electronic Devices

O. Faynot, F. Andrieu, M. Gaillardin, 2013, IEEE Transactions on Nuclear Science.

Hardening Approach to Use CMOS Image Sensors for Fusion by Inertial Confinement Diagnostics

M. Gaillardin, A. Rousseau, P. Magnan, 2013, IEEE Transactions on Nuclear Science.

Investigations of the MGy dose level radiation effects on the photometric budget of a radiation-hardened CMOS-based camera.

P. Paillet, S. Girard, V. Goiffon, 2019, Applied optics.

Radiation Effects in CCD on CMOS Devices: First Analysis of TID and DDD Effects

P. Magnan, V. Goiffon, R. Molina, 2015, IEEE Transactions on Nuclear Science.

Pixel pitch and particle energy influence on the dark current distribution of neutron irradiated CMOS image sensors.

Romain Molina, Pierre Magnan, Vincent Goiffon, 2016, Optics express.

Exploring the Kinetics of Formation and Annealing of Single Particle Displacement Damage in Microvolumes of Silicon

P. Paillet, S. Girard, P. Magnan, 2014, IEEE Transactions on Nuclear Science.

Modeling Approach for the Prediction of Transient and Permanent Degradations of Image Sensors in Complex Radiation Environments

Sylvain Girard, Cedric Virmontois, Vincent Goiffon, 2013, IEEE Transactions on Nuclear Science.

Investigation of the Propagation Induced Pulse Broadening (PIPB) Effect on Single Event Transients in SOI and Bulk Inverter Chains

J. Melinger, P. Dodd, D. Mcmorrow, 2008, IEEE Transactions on Nuclear Science.

Single Event Upsets Induced by 1–10 MeV Neutrons in Static-RAMs Using Mono-Energetic Neutron Sources

P. Paillet, V. Ferlet-Cavrois, J. Baggio, 2007, IEEE Transactions on Nuclear Science.

Radiation effects in advanced SOI devices: New insights into Total Ionizing Dose and Single-Event Effects

O. Faynot, M. Martinez, F. Andrieu, 2013, 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).

SEE sensitivity of a COTS GaN transistor and silicon MOSFETs

P. Paillet, V. Ferlet-Cavrois, J. Baggio, 2007, 2007 9th European Conference on Radiation and Its Effects on Components and Systems.

Proton Irradiation Response of Hole-Assisted Carbon Coated Erbium-Doped Fiber Amplifiers

M. Gaillardin, B. Cadier, M. Boutillier, 2014, IEEE Transactions on Nuclear Science.

X-Ray, Proton, and Electron Radiation Effects on Type I Fiber Bragg Gratings

Youcef Ouerdane, Sylvain Girard, Claude Marcandella, 2018, IEEE Transactions on Nuclear Science.

Total Ionizing Dose Response of Multiple-Gate Nanowire Field Effect Transistors

M. Martinez, F. Andrieu, M. Vinet, 2017, IEEE Transactions on Nuclear Science.

SET Sensitivity of Trigate Silicon Nanowire Field-Effect Transistors

F. Andrieu, M. Vinet, P. Paillet, 2019, IEEE Transactions on Nuclear Science.

Investigations on the Geometry Effects and Bias Configuration on the TID Response of nMOS SOI Tri-Gate Nanowire Field-Effect Transistors

O. Faynot, M. Martinez, F. Andrieu, 2018, IEEE Transactions on Nuclear Science.

Estimation of the Single-Event Upset Sensitivity of Advanced SOI SRAMs

M. Gaillardin, P. Paillet, M. Raine, 2018, IEEE Transactions on Nuclear Science.

Heavy Ion Microbeam- and Broadbeam-Induced Transients in SiGe HBTs

M. Turowski, A. Raman, J. Baggio, 2009, IEEE Transactions on Nuclear Science.

Angular Dependence of SOI Transistor Response to Heavy Ion Irradiation

P. Paillet, A. Bournel, M. Gaillardin, 2010, IEEE Transactions on Nuclear Science.

Impact of mechanical strain on the charge collection mechanisms of nanometer scaled SOI devices under heavy ion and pulsed laser irradiation

O. Faynot, D. Mcmorrow, F. Andrieu, 2013, European Conference on Radiation and Its Effects on Components and Systems.

Novel Energy-Dependent Effects Revealed in GeV Heavy-Ion-Induced Transient Measurements of Antimony-Based III-V HEMTs

J. B. Boos, peixiong zhao, R. Reed, 2010, IEEE Transactions on Nuclear Science.

Measurement of the transient response of semiconductor devices to ionizing radiation

J. B. Boos, J. Melinger, D. Mcmorrow, 2007 .

Dispersion of heavy ion deposited energy in nanometric electronic devices: Experimental measurements and simulation possibilities

M. Martinez, P. Paillet, M. Gaillardin, 2015 .

TID Response of pMOS Nanowire Field-Effect Transistors: Geometry and Bias Dependence

O. Faynot, M. Martinez, F. Andrieu, 2018, IEEE Transactions on Nuclear Science.

6-MeV Electron Exposure Effects on OFDR-Based Distributed Fiber-Based Sensors

P. Paillet, S. Girard, D. Aubert, 2018, IEEE Transactions on Nuclear Science.

Phosphosilicate Multimode Optical Fiber for Sensing and Diagnostics at Inertial Confinement Fusion Facilities

P. Paillet, S. Girard, V. Glebov, 2022, IEEE Sensors Journal.

Novel Gd3+-doped silica-based optical fiber material for dosimetry in proton therapy

P. Paillet, G. Bouwmans, S. Girard, 2019, Scientific Reports.

Sol–gel derived copper-doped silica glass as a sensitive material for X-ray beam dosimetry

Youcef Ouerdane, Sylvain Girard, Claude Marcandella, 2016 .

Potential of Novel Optical Fibers for Proton Therapy Dosimetry

P. Paillet, G. Bouwmans, S. Girard, 2017, 2017 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC).

Potential of Copper- and Cerium-Doped Optical Fiber Materials for Proton Beam Monitoring

E. Blackmore, M. Gaillardin, M. Trinczek, 2017, IEEE Transactions on Nuclear Science.

Cerium-activated sol–gel silica glasses for radiation dosimetry in harsh environment

G. Bouwmans, G. Chadeyron, R. Mahiou, 2016 .

Monitoring of Ultra-High Dose Rate Pulsed X-ray Facilities with Radioluminescent Nitrogen-Doped Optical Fiber

P. Paillet, S. Girard, A. Boukenter, 2022, Sensors.

X-Rays, $\gamma$ -Rays, and Proton Beam Monitoring With Multimode Nitrogen-Doped Optical Fiber

P. Paillet, Y. Kadi, S. Girard, 2019, IEEE Transactions on Nuclear Science.

New Insights Into Single Event Transient Propagation in Chains of Inverters—Evidence for Propagation-Induced Pulse Broadening

M. Gaillardin, J. Baggio, N. Fel, 2007, IEEE Transactions on Nuclear Science.

Radiation vulnerability of standard and radiation-hardened optical glasses at MGy dose: Towards the design of tolerant optical systems

V. Goiffon, A. Boukenter, T. Allanche, 2022, Journal of Non-Crystalline Solids.

Ultra-high Dose Rate Pulsed X-ray Source Monitoring Based On Radioluminescent N-doped Optical Fiber

P. Paillet, S. Girard, A. Boukenter, 2021, European Conference on Radiation and Its Effects on Components and Systems.

Estimating the Single-Event Upset sensitivity of a memory array using simulation

Philippe Paillet, Marc Gaillardin, Olivier Duhamel, 2017, Microelectron. Reliab..

Impact of SOI Substrate on the Radiation Response of UltraThin Transistors Down to the 20 nm Node

Olivier Faynot, Sylvain Girard, Claude Marcandella, 2013, IEEE Transactions on Nuclear Science.

CAMRAD: Development of a Multi-Megagray Radiation Hard CMOS Camera for Dismantling Operations

Youcef Ouerdane, Romain Molina, Pierre Magnan, 2018 .

Neutron Displacement Damage Cross Section in GaN: Numerical Evaluations and Differences With Si

P. Paillet, C. Marcandella, C. Inguimbert, 2023, IEEE Transactions on Nuclear Science.

Investigations on the Vulnerability of Advanced CMOS Technologies to MGy Dose Environments

O. Faynot, F. Andrieu, M. Gaillardin, 2013, IEEE Transactions on Nuclear Science.

High total ionizing dose and temperature effects on micro- and nano-electronic devices

P. Paillet, P. Magnan, V. Goiffon, 2013, 2013 3rd International Conference on Advancements in Nuclear Instrumentation, Measurement Methods and their Applications (ANIMMA).

Nuclear background effects on plasma diagnostics for megajoule class laser facility

Pierre Magnan, Sylvain Girard, Matthieu Hamel, 2013, Optics & Photonics - Optical Engineering + Applications.