Dawei Bi

发表

A New Method for Extracting the Radiation Induced Trapped Charge Density Along the STI Sidewall in the PDSOI NMOSFETs

S. Zou, Huixiang Huang, Zhengxuan Zhang, 2013, IEEE Transactions on Nuclear Science.

Radiation Hardening by Applying Substrate Bias

Shichang Zou, Zhiyuan Hu, Bingxu Ning, 2011, IEEE Transactions on Nuclear Science.

Total Ionizing Dose Enhanced DIBL Effect for Deep Submicron NMOSFET

S. Zou, Zhengxuan Zhang, Zhiyuan Hu, 2011, IEEE Transactions on Nuclear Science.

Comprehensive Study on the Total Dose Effects in a 180-nm CMOS Technology

Shichang Zou, Zhiyuan Hu, Bingxu Ning, 2011, IEEE Transactions on Nuclear Science.

Total Dose Irradiation-Induced Degradation of Hysteresis Effect in Partially Depleted Silicon-on-Insulator NMOSFETs

S. Zou, Huixiang Huang, Zhengxuan Zhang, 2013, IEEE Transactions on Nuclear Science.

An Analytical Study of the Effect of Total Ionizing Dose on Body Current in 130-nm PDSOI I/O nMOSFETs

S. Zou, Huilong Zhu, Zhengxuan Zhang, 2019, IEEE Transactions on Nuclear Science.

High energy irradiation effects on silicon photonic passive devices.

E. Zhang, Aimin Wu, D. Fleetwood, 2021, Optics express.

Influence of characteristics’ measurement sequence on total ionizing dose effect in PDSOI nMOSFET

S. Zou, Huilong Zhu, Zhengxuan Zhang, 2018, Chinese Physics B.

A comprehensive evaluation of radiation hardening by applying negative body bias and back-gate bias in 130 nm PDSOI technology

S. Zou, Huilong Zhu, Zhengxuan Zhang, 2020 .

A Special Total-Ionizing-Dose-Induced Short Channel Effect in Thin-Film PDSOI Technology: Phenomena, Analyses, and Models

S. Zou, Huilong Zhu, Zhengxuan Zhang, 2020, IEEE Transactions on Nuclear Science.

Enhanced radiation-induced narrow channel effects in 0.13-{\boldsymbol{\mu }}{\rm{m}} PDSOI nMOSFETs with shallow trench isolation

Zhengxuan Zhang, Zhiyuan Hu, Dawei Bi, 2018 .

Anomalous Electrical Properties Induced by Hot-Electron-Injection in 130-nm Partially Depleted SOI NMOSFETs Fabricated on Modified Wafer

S. Zou, Zhengxuan Zhang, Zhiyuan Hu, 2016, IEEE Transactions on Nuclear Science.

Substrate effect on radiation-induced charge trapping in buried oxide for partially-depleted SOI NMOSFET

Shichang Zou, Xin Xie, Zhiyuan Hu, 2020, IEICE Electron. Express.

Total ionizing dose induced single transistor latchup in 130-nm PDSOI input/output NMOSFETs

Zhengxuan Zhang, Zhiyuan Hu, Bingxu Ning, 2017 .

THE DEGRADATION INDUCED BY HOT-CARRIER INJECTION IN 130-NM PARTIALLY DEPLETED SOI PMOSFETS FABRICATED ON MODIFIED WAFER

S. Zou, Huilong Zhu, Zhengxuan Zhang, 2019, Recent Developments on Information and Communication Technology (ICT) Engineering.

Influence of Tilted Angle on Effective Linear Energy Transfer in Single Event Effect Tests for Integrated Circuits at 130 nm Technology Node

Zhengxuan Zhang, Dawei Bi, Xiaonian Liu, 2017 .

Single Event Upset Sensitivity of D-Flip Flop: Comparison of PDSOI With Bulk Si at 130 nm Technology Node

Zhengxuan Zhang, Zhiyuan Hu, Dawei Bi, 2017, IEEE Transactions on Nuclear Science.

TOTAL-IONIZING-DOSE-INDUCED BODY SHIELDING EFFECT IN 130 NM T-GATE PDSOI I/O NMOSFETS

S. Zou, Zhengxuan Zhang, Dawei Bi, 2019, Recent Developments on Information and Communication Technology (ICT) Engineering.

Analysis of bias effects on the total ionizing dose response in a 180 nm technology

Shichang Zou, Zhiyuan Hu, Bingxu Ning, 2011 .

Total-Ionizing-Dose Induced Coupling Effect in the 130-nm PDSOI I/O nMOSFETs

Yunfei En, Shichang Zou, Zhiyuan Hu, 2014, IEEE Electron Device Letters.

Hardening silicon-on-insulator nMOSFETs by multiple-step Si+ implantation

Yanyan Huang, Kai Tang, Jiachun Zheng, 2016, Microelectron. Reliab..

Improving Total Dose Tolerance of Buried Oxides in SOI Wafers by Multiple-Step ${\hbox {Si}}^ + $ Implantation

Zhiyuan Hu, Dawei Bi, Zhengxuan Zhang, 2014, IEEE Transactions on Nuclear Science.

Novel Si ion implantation technique for improving the radiation hardness of SOI pseudo-MOS transistor

M. Tang, Huixiang Huang, Zhengxuan Zhang, 2014 .

Influence of Si nanocrystal embedded in BOX on radiation and electrical properties of SOI wafer

Aimin Wu, Xing Wei, Zhengxuan Zhang, 2012 .

Transportation of carriers in silicon implanted SiO2 films during ionizing radiation

Shichang Zou, Dawei Bi, Zhengxuan Zhang, 2012 .

A highly stable and low‐cost 12T radiation hardened SRAM cell design for aerospace application

S. Zou, Zhengxuan Zhang, Zhiyuan Hu, 2023, Int. J. Circuit Theory Appl..

High-performance and highly-stable soft error resistant 12T SRAM cell for space applications

S. Zou, Zhengxuan Zhang, Zhiyuan Hu, 2023, Microelectronics Reliability.

Effect of Total Dose Irradiation on Parasitic BJT in 130 nm PDSOI MOSFETs

S. Zou, Zhengxuan Zhang, Zhiyuan Hu, 2023, Micromachines.

Radiation-enhanced gate-induced-drain-leakage current in the 130 nm partially-depleted SOI pMOSFET

Zhengxuan Zhang, Zhiyuan Hu, Bingxu Ning, 2015 .

Influence of the Total Ionizing Dose Irradiation on 130 nm Floating-body PDSOI NMOSFETs

Zhiyuan Hu, Bingxu Ning, Dawei Bi, 2015, IEEE Transactions on Nuclear Science.

Utilizing a shallow trench isolation parasitic transistor to characterize the total ionizing dose effect of partially-depleted silicon-on-insulator input/output n-MOSFETs

Huixiang Huang, Zhengxuan Zhang, Y. En, 2014 .

Total ionizing dose effect in 0.2 μm PDSOI NMOSFETs with shallow trench isolation

Zhengxuan Zhang, Chao Peng, Zhiyuan Hu, 2014, Microelectron. Reliab..

Investigation of unique total ionizing dose effects in 0.2 µm partially-depleted silicon-on-insulator technology

M. Tang, Huixiang Huang, Zhengxuan Zhang, 2013, 1307.0327.

Influence of poly region extended into field oxide on total ionizing dose effect for deep submicron MOSFET

S. Zou, Zhengxuan Zhang, Zhiyuan Hu, 2011, 2011 12th European Conference on Radiation and Its Effects on Components and Systems.

Bias dependence of a deep submicron NMOSFET response to total dose irradiation

Shichang Zou, Zhiyuan Hu, Bingxu Ning, 2011 .

Comparison of TID response in core, input/output and high voltage transistors for flash memory

Hua Shao, Zhengxuan Zhang, Shichang Zou, 2011, Microelectron. Reliab..

Total ionizing dose effects in high voltage devices for flash memory

S. Zou, Zhengxuan Zhang, Zhiyuan Hu, 2010 .

Radiation-enhanced channel length modulation induced by trapped charges in buried oxide layer

Shichang Zou, Zhiyuan Hu, Huilong Zhu, 2019, IEICE Electron. Express.

Bias dependence of TID induced single transistor latch for 0.13 μm partially depleted SOI input/output NMOSFETs

Lei Song, Lihua Dai, Zhengxuan Zhang, 2016, Microelectron. Reliab..

The characterization of the built-in bipolar junction transistor in H-gate PD-SOI NMOS

S. Zou, Huilong Zhu, Zhengxuan Zhang, 2020 .

Investigation of the total dose response of partially depleted SOI nMOSFETs using TCAD simulation and experiment

Zhengxuan Zhang, Dawei Bi, Huixiang Huang, 2014, Microelectron. J..

Investigating the degradation mechanisms caused by the TID effects in 130 nm PDSOI I/O NMOS

Zhiyuan Hu, Bingxu Ning, Dawei Bi, 2014 .

The Enhanced Role of Shallow-Trench Isolation in Ionizing Radiation Damage of Narrow Width Devices in 0.2 μm Partially-Depleted Silicon-on-Insulator Technology

Huixiang Huang, Zhengxuan Zhang, Dawei Bi, 2013 .

The impact of total ionizing radiation on body effect

Shichang Zou, Zhiyuan Hu, Zhangli Liu, 2011, Microelectron. J..

Total ionizing dose effects in elementary devices for 180-nm flash technologies

Hua Shao, Zhengxuan Zhang, Shichang Zou, 2011, Microelectron. Reliab..

Radiation-induced shallow trench isolation leakage in 180-nm flash memory technology

Zhengxuan Zhang, Shichang Zou, Zhiyuan Hu, 2012, Microelectron. Reliab..