T. Furukawa

A variable-size shallow trench isolation (STL) technology with diffused sidewall doping for submicron CMOS

Y. Taur, B. Davari, J. Warnock, 1988, Technical Digest., International Electron Devices Meeting.

HfO/sub 2/ and HfAlO for CMOS: thermal stability and current transport

R. Carruthers, T. Ma, T. Tamagawa, 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

Accelerated gate-oxide breakdown in mixed-voltage I/O circuits

S. Mittl, T. Furukawa, D. L. Turner, 1997, 1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual.

Effect of Al inclusion in HfO2 on the physical and electrical properties of the dielectrics

T. Ma, T. Tamagawa, T. Furukawa, 2002, IEEE Electron Device Letters.

Gate Material Dependence Of Process Charging Damage In Thin Gate Oxide

S. Greco, J. Sun, W. Abadeer, 1996, Proceedings of 1st International Symposium on Plasma Process-Induced Damage.

Subnanometer-resolution depth profiling of boron atoms and lattice defects in silicon ultrashallow junctions by ion beam techniques

L. Vanamurthy, B. Doris, P. Ronsheim, 2013 .

Gate dielectric integrity and reliability in 0.5- mu m CMOS technology

R. Bolam, A. Stamper, T. Furukawa, 1993, 31st Annual Proceedings Reliability Physics 1993.