C. Arena

发表

Phosphorescence and thermally stimulated luminescence of amorphous SiO2

M. Martini, G. Spinolo, A. Vedda, 1994 .

The Netherlands NEW EFFICIENCY FRONTIERS WITH WAFER-BONDED MULTI-JUNCTION SOLAR CELLS

Thomas, F. Dimroth, A. Bett, 2014 .

Structural evolution of GaN layers grown on (0 0 0 1) sapphire by hydride vapor phase epitaxy

S. V. Mahajan, C. Arena, H. McFelea, 2011 .

Evaluating the performance of InGaN/GaN multi-quantum-well solar cells operated at elevated temperatures via DC and small-signal AC analysis

F. Ponce, C. Honsberg, R. King, 2019, Japanese Journal of Applied Physics.

Absorption coefficient and exciton oscillator strengths in InGaAs/InP multi-quantum wells

L. Tarricone, C. Arena, C. Rigo, 1993 .

Temperature dependence analysis of the optical transmission spectra in InGaAs/InP multi quantum well structures

L. Tarricone, C. Arena, F. Genova, 1993 .

Temperature Dependence and High-Temperature Stability of the Annealed Ni/Au Ohmic Contact to p-Type GaN in Air

S. Goodnick, F. Ponce, C. Arena, 2016, Journal of Electronic Materials.

Origin of predominantly a type dislocations in InGaN layers and wells grown on (0001) GaN

C. Arena, H. McFelea, S. Mahajan, 2011 .

Analysis of Exciton Absorption Peak Broadening Contributions in InGaAs/InP Multi Quantum Wells

L. Tarricone, C. Arena, B. Rotelli, 1994 .

Highly tensile strained silicon–carbon alloys epitaxially grown into recessed source drain areas of NMOS devices

C. Arena, M. Bauer, C. Arena, 2006, 2006 International SiGe Technology and Device Meeting.

Electronic and topographic structure of ta-C, ta-C:N and ta-C:B investigated by scanning tunnelling microscopy

J. Robertson, W. Milne, M. Welland, 1999 .

New Efficiency Frontiers with Wafer-Bonded Multi-Junction Solar Cells.

Eric Guiot, Thomas Signamarcheix, Gerald Siefer, 2014 .

Direct observation of formation of threading dislocations from stacking faults in GaN layer grown on (0 0 0 1) sapphire

Fanyu Meng, C. Arena, H. McFelea, 2011 .

Stresses, microstructure and resistivity of thin tungsten films deposited by RF magnetron sputtering

F. Varnière, M. Hugon, B. Agius, 1989 .

InGaN solar cells with regrown GaN homojunction tunnel contacts

C. Honsberg, Chaomin Zhang, R. King, 2018, Applied Physics Express.

Refractory In$_{x}$ Ga1−$_{x}$ N Solar Cells for High-Temperature Applications

S. Goodnick, F. Ponce, C. Honsberg, 2017, IEEE Journal of Photovoltaics.

Electronic properties of tetrahedral amorphous carbon investigated by scanning tunneling microscopy

J. Robertson, W. Milne, M. Welland, 1999 .

The role of Mg bulk hyper-doping and delta-doping in low-resistance GaN homojunction tunnel diodes with negative differential resistance

C. Honsberg, Z. Holman, E. Vadiee, 2019, Journal of Applied Physics.

Development of high efficiency wafer bonded 4-junction solar cells for concentrator photovoltaic applications

Eric Guiot, Thomas Signamarcheix, Gerald Siefer, 2014, 2014 IEEE 40th Photovoltaic Specialist Conference (PVSC).

Sapphire surface pits as sources of threading dislocations in hetero-epitaxial GaN layers

C. Arena, H. McFelea, S. Mahajan, 2011 .

Ge deep sub-micron HiK/MG pFETs with superior drive compared to Si HiK/MG state-of-the-art reference

B. Kaczer, M. Heyns, M. Meuris, 2006, 2006 International SiGe Technology and Device Meeting.

Kinetics of Si incorporation into a Ge matrix for Si1−xGex layers grown by chemical vapor deposition

C. Arena, M. Bauer, N. Cody, 2006 .

DC and Small Signal AC Performance Analysis of InGaN/GaN Multi-Quantum-Well Solar Cells Operated at Elevated Temperatures

S. Goodnick, C. Honsberg, E. Vadiee, 2018, 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC).