J. G. Hong

Total-dose radiation response of hafnium-silicate capacitors

Ronald D. Schrimpf, Daniel M. Fleetwood, Marty R. Shaneyfelt, 2002 .

Structural dependence of breakdown characteristics and electrical degradation in ultrathin RPECVD oxide/nitride gate dielectrics under constant voltage stress

G. Lucovsky, Y. Wu, Y. M. Lee, 2003 .

Conduction band states of transition metal (TM) high-k gate dielectrics as determined from X-ray absorption spectra

Robert J. Nemanich, Gerald Lucovsky, D. E. Aspnes, 2005, Microelectron. Reliab..

Electron traps at interfaces between Si(100) and noncrystalline Al2O3, Ta2O5, and (Ta2O5)x(Al2O3)1−x alloys

R. S. Johnson, G. Lucovsky, J. G. Hong, 2001 .

The Effect of RuO 2 /Pt Hybrid Bottom Electrode Structure on The Microstructure and Ferroelectric Properties of Sol-Gel Derived PZT Thin Films

A. Kingon, Hee Young Lee, Seung-Hyun Kim, 1997 .

Thermally induced imprint properties of chemical solution derived PLZT thin films

A. Kingon, Seung-Hyun Kim, S. Streiffer, 1998 .