P. Raisanen

Comparison of surface radiative flux parameterizations Part II . Shortwave radiation

H. Savijärvi, S. Niemela, P. Raisanen, 2001 .

Impact of the precursor chemistry and process conditions on the cell-to-cell variability in 1T-1R based HfO2 RRAM devices

Piero Olivo, Wei Li, Cristian Zambelli, 2018, Scientific Reports.

Nucleation and growth of atomic layer deposited HfO2 gate dielectric layers on chemical oxide (Si–O–H) and thermal oxide (SiO2 or Si–O–N) underlayers

Wilfried Vandervorst, Martin A. Green, David A. Muller, 2002 .

Morphology and crystallization kinetics in HfO2 thin films grown by atomic layer deposition

Martin L. Green, W. H. Lin, D. Muller, 2003 .

Comparison of surface radiative flux parameterizations Part I : Longwave radiation

S. Niemela, P. Raisanen, H. Savijarvi, 2001 .

Suppressed crystallization of Hf-based gate dielectrics by controlled addition of Al2O3 using atomic layer deposition

Hao Gong, Alex See, Martin L. Green, 2002 .