Y. Carminati

Scaling of SiGe BiCMOS Technologies for Applications above 100 GHz

E. Dacquay, I. Sarkas, A. Balteanu, 2012, 2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

A 55 nm triple gate oxide 9 metal layers SiGe BiCMOS technology featuring 320 GHz fT / 370 GHz fMAX HBT and high-Q millimeter-wave passives

P. Chevalier, Y. Campidelli, D. Gloria, 2014, 2014 IEEE International Electron Devices Meeting.

Extrinsic base resistance optimization in DPSA-SEG SiGe:C HBTs

P. Chevalier, A. Chantre, C. Gaquière, 2012, 2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).

Integrated Test Structures for Reliability Investigation under Dynamic Stimuli

X. Federspiel, Florian Cacho, Y. Carminati, 2018, 2018 IEEE 24th International Symposium on On-Line Testing And Robust System Design (IOLTS).

BTI variability fundamental understandings and impact on digital logic by the use of extensive dataset

X. Federspiel, D. Angot, V. Huard, 2013, 2013 IEEE International Electron Devices Meeting.