M. Tanabe

45 GHz transimpedance 32 dB limiting amplifier and 40 Gb/s 1:4 high-sensitivity demultiplexer with decision circuit using SiGe HBTs for 40 Gb/s optical receiver

T. Masuda, N. Shiramizu, K. Washio, 2000, 2000 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.00CH37056).

67-GHz static frequency divider using 0.2-/spl mu/m self-aligned SiGe HBTs

K. Oda, E. Ohue, R. Hayami, 2000, 2000 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Digest of Papers (Cat. No.00CH37096).

Optimization of characteristics related to the emitter-base junction in self-aligned SEG SiGe HBTs and their application in 72-GHz-static/92-GHz-dynamic frequency dividers

K. Oda, E. Ohue, R. Hayami, 2002 .

A 0.2-/spl mu/m 180-GHz-f/sub max/ 6.7-ps-ECL SOI/HRS self aligned SEG SiGe HBT/CMOS technology for microwave and high-speed digital applications

Katsuyoshi Washio, M. Tanabe, Hiromi Shimamoto, 2000 .

A 3-10 GHz bandwidth low-noise and low-power amplifier for full-band UWB communications in 0.25- /spl mu/m SiGe BiCMOS technology

K. Washio, T. Masuda, N. Shiramizu, 2005, 2005 IEEE Radio Frequency integrated Circuits (RFIC) Symposium - Digest of Papers.

12-ps ECL using low-base-resistance Si bipolar transistor by self-aligned metal/IDP technology

E. Ohue, K. Washio, M. Tanabe, 1997 .

A selective-epitaxial-growth SiGe-base HBT with SMI electrodes featuring 9.3-ps ECL-gate delay

K. Oda, E. Ohue, H. Shimamoto, 1999 .

A selective-epitaxial SiGe HBT with SMI electrodes featuring 9.3-ps ECL-gate delay

K. Washio, M. Tanabe, H. Shimamoto, 1997, International Electron Devices Meeting. IEDM Technical Digest.

Self-aligned selective-epitaxial-growth SiGe HBTs: process, device, and ICs

K. Oda, E. Ohue, R. Hayami, 2000 .

130-GHz f/sub T/ SiGe HBT technology

K. Washio, M. Tanabe, T. Onai, 1997, International Electron Devices Meeting. IEDM Technical Digest.

Ultra-low-power and high-speed SiGe base bipolar transistors for wireless telecommunication systems

Katsuyoshi Washio, M. Tanabe, Hiromi Shimamoto, 1998 .

A 64 GHz Si bipolar transistor using in-situ phosphorus doped polysilicon emitter technology

Tokuo Kure, M. Tanabe, S. Iijima, 1991, International Electron Devices Meeting 1991 [Technical Digest].