Bing Chen

发表

A Physics-Based Compact Model of Metal-Oxide-Based RRAM DC and AC Operations

B. Gao, J. Kang, G. Du, 2013, IEEE Transactions on Electron Devices.

Analysis of the Voltage–Time Dilemma of Metal Oxide-Based RRAM and Solution Exploration of High Speed and Low Voltage AC Switching

Jinfeng Kang, Lang Zeng, Gang Du, 2014, IEEE Transactions on Nanotechnology.

A Simplified Model for Resistive Switching of Oxide-Based Resistive Random Access Memory Devices

Lifeng Liu, Jinfeng Kang, B. Gao, 2012, IEEE Electron Device Letters.

A Novel Defect-Engineering-Based Implementation for High-Performance Multilevel Data Storage in Resistive Switching Memory

Lifeng Liu, Jinfeng Kang, Bin Yu, 2013, IEEE Transactions on Electron Devices.

Well controlled multiple resistive switching states in the Al local doped HfO2 resistive random access memory device

B. Gao, L. Liu, X. Liu, 2013 .

Self-Selection RRAM Cell With Sub- $\mu \text{A}$ Switching Current and Robust Reliability Fabricated by High- $K$ /Metal Gate CMOS Compatible Technology

Lifeng Liu, Jinfeng Kang, Weihai Bu, 2016, IEEE Transactions on Electron Devices.

3-D Cross-Point Array Operation on ${\rm AlO}_{y}/{\rm HfO}_{x}$ -Based Vertical Resistive Switching Memory

Shimeng Yu, Jinfeng Kang, Rui Liu, 2014, IEEE Transactions on Electron Devices.

Complementary Metal Oxide Semiconductor Compatible Hf-Based Resistive Random Access Memory with Ultralow Switching Current/Power

D. Kwong, Lifeng Liu, Jinfeng Kang, 2012 .

Multilevel resistive switching in HfOx/TiOx/HfOx/TiOx multilayer-based RRAM with high reliability

Lifeng Liu, Jinfeng Kang, B. Gao, 2014, 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).

Design and optimization methodology for 3D RRAM arrays

Shimeng Yu, Bing Chen, Jinfeng Kang, 2013, 2013 IEEE International Electron Devices Meeting.

Ultra-low-energy three-dimensional oxide-based electronic synapses for implementation of robust high-accuracy neuromorphic computation systems.

Shimeng Yu, Bing Chen, Peng Huang, 2014, ACS nano.

Engineering oxide resistive switching materials for memristive device application

Yi Wang, Jinfeng Kang, Ruqi Han, 2011 .

A SPICE Model of Resistive Random Access Memory for Large-Scale Memory Array Simulation

Bing Chen, Peng Huang, Jinfeng Kang, 2014, IEEE Electron Device Letters.

Write disturb analyses on half-selected cells of cross-point RRAM arrays

Shimeng Yu, Bing Chen, Peng Huang, 2014, 2014 IEEE International Reliability Physics Symposium.

Degradation Characteristics of Resistive Switching Memory Devices Correlated with Electric Field Induced Ion-Migration Effect of Anode

Jinfeng Kang, B. Gao, Bing Chen, 2013 .

Doping profile modification approach of the optimization of HfOx based resistive switching device by inserting AlOx layer

Lifeng Liu, Jinfeng Kang, Zhe Chen, 2015, Science China Information Sciences.

Experimental investigation of self heating effect (SHE) in multiple-fin SOI FinFETs

Yandong He, Lang Zeng, Gang Du, 2014 .

Disturbance characteristics of half-selected cells in a cross-point resistive switching memory array

Shimeng Yu, Jinfeng Kang, Rui Liu, 2016, Nanotechnology.

Parameters extraction on HfOX based RRAM

Zhe Chen, Bing Chen, Xiaoyan Liu, 2014, 2014 44th European Solid State Device Research Conference (ESSDERC).

Statistical assessment methodology for the design and optimization of cross-point RRAM arrays

Shimeng Yu, Bing Chen, Peng Huang, 2014, 2014 IEEE 6th International Memory Workshop (IMW).

Impact of pulse rise time on programming of cross-point RRAM arrays

Shimeng Yu, Bing Chen, Peng Huang, 2014, Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).

Endurance Degradation in Metal Oxide-Based Resistive Memory Induced by Oxygen Ion Loss Effect

Zheng Fang, Xin Peng Wang, Hong Yu Yu, 2013, IEEE Electron Device Letters.

Modeling and Optimization of Bilayered TaOx RRAM Based on Defect Evolution and Phase Transition Effects

Jinfeng Kang, Yudi Zhao, Haitong Li, 2016, IEEE Transactions on Electron Devices.

Investigation of forming process for metal oxide-based resistive switching memory by stochastic simulation

Jinfeng Kang, B. Gao, G. Du, 2014, 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).

Optimization of Conductive Filament of Oxide-Based Resistive-Switching Random Access Memory for Low Operation Current by Stochastic Simulation

Jinfeng Kang, Gang Du, Yexin Deng, 2013 .

Microscopic mechanism for unipolar resistive switching behaviour of nickel oxides

Jinfeng Kang, Y. Y. Wang, Hongyu Yu, 2012 .

RRAM Crossbar Array With Cell Selection Device: A Device and Circuit Interaction Study

Bing Chen, Peng Huang, Jinfeng Kang, 2013, IEEE Transactions on Electron Devices.

Highly Compact (4F2) and Well Behaved Nano-Pillar Transistor Controlled Resistive Switching Cell for Neuromorphic System Application

Guo-Qiang Lo, Jinfeng Kang, Dim-Lee Kwong, 2014, Scientific Reports.

Solution Processed Resistive Random Access Memory Devices for Transparent Solid-State Circuit Systems

Lifeng Liu, Xiaohui Liu, Jinfeng Kang, 2014 .

Ultra-low-energy three-dimensional oxide-based electronic synapses for implementation of robust high-accuracy neuromorphic computation systems.

Shimeng Yu, H. Wong, Lifeng Liu, 2014, ACS nano.

Scaling and operation characteristics of HfOx based vertical RRAM for 3D cross-point architecture

Shimeng Yu, Bing Chen, H.-S. Philip Wong, 2014, 2014 IEEE International Symposium on Circuits and Systems (ISCAS).

Analytic model of endurance degradation and its practical applications for operation scheme optimization in metal oxide based RRAM

G. Lo, D. Kwong, Jinfeng Kang, 2013, 2013 IEEE International Electron Devices Meeting.

Experimental study of plane electrode thickness scaling for 3D vertical resistive random access memory

Shimeng Yu, Jinfeng Kang, Rui Liu, 2013, Nanotechnology.

A physical based analytic model of RRAM operation for circuit simulation

Jinfeng Kang, B. Chen, Y. Lu, 2012, 2012 International Electron Devices Meeting.