H. Anderson

发表

A Kinetic Model for Plasma Etching Silicon in a SF6/O2 RF Discharge

H. Anderson, J. Merson, R. W. Light, 1986, IEEE Transactions on Plasma Science.

Particulate generation in silane/ammonia rf discharges

H. Anderson, J. Mock, Rahul Jairath, 1990 .

Particles in C2F6-CHF3 and CF4-CHF3 etching plasmas

P. Resnick, H. Anderson, J. Mock, 1994 .

Characteristics of C4F8 plasmas with Ar, Ne, and He additives for SiO2 etching in an inductively coupled plasma (ICP) reactor

H. Anderson, G. Oehrlein, Yicheng Wang, 2003 .

Effects of Ar and O2 additives on SiO2 etching in C4F8-based plasmas

M. Barela, H. Anderson, G. Oehrlein, 2003 .

Fluorocarbon-based plasma etching of SiO2: Comparison of C4F6/Ar and C4F8/Ar discharges

M. Barela, H. Anderson, G. Oehrlein, 2002 .

Dusty Plasma Studies in the Gaseous Electronics Conference Reference Cell

H. Anderson, S. Radovanov, 1995, Journal of research of the National Institute of Standards and Technology.

DIODE LASER SPECTROSCOPY OF HIGH DENSITY FLUOROCARBON PLASMAS FOR SEMICONDUCTOR MATERIAL PROCESSING

H. Anderson, G. Hebner, G. Deering, 1998 .

Gas-phase studies in inductively coupled fluorocarbon plasmas

Marc Schaepkens, Harold M. Anderson, Gottlieb S. Oehrlein, 2001 .

Role of C2F4, CF2, and ions in C4F8∕Ar plasma discharges under active oxide etch conditions in an inductively coupled GEC cell reactor

M. Barela, H. Anderson, G. Oehrlein, 2005 .

The Gaseous Electronics Conference radio‐frequency reference cell: A defined parallel‐plate radio‐frequency system for experimental and theoretical studies of plasma‐processing discharges

David B. Graves, Mark A. Sobolewski, James K. Olthoff, 1994 .

Dynamic laser light scattering studies of dusty plasmas in the Gaseous Electronics Conference Reference Cell

H. Anderson, S. Radovanov, 1996 .

Plasma and Discharge Physics for Materials Processing

H. Anderson, 1995 .

A Model for Silicon Dendrite Growth During Laser/Plasma Deposition from a Silane Discharge

H. Anderson, P. Hargis, 1986 .

Electrical isolation of radio‐frequency plasma discharges

Michael P. Splichal, H. Anderson, P. Miller, 1992 .

Study of C4F8/CO and C4F8/Ar/CO plasmas for highly selective etching of organosilicate glass over Si3N4 and SiC

H. Anderson, F. Celii, G. Oehrlein, 2004 .

Oxide etch behavior in a high-density, low-pressure, inductively coupled C2F6 plasma: Etch rates, selectivity to photoresist, plasma parameters, and CFx radical densities

M. Barela, H. Anderson, K. Waters, 2001 .

Plasma Etching of Si in SF 6 /O 2 and NF 3 /O 2 Mixtures: Computer Simulations And Experimental Results.

Bradley K. Smith, H. Anderson, R. W. Light, 1986 .

Nonlinear Concentration Effects on Radionuclide Diffusion and Mobility in Compacted Bentonite.

H. Anderson, F. Chiao, 1984 .