H. Blom

发表

Microloading effect in reactive ion etching

Sören Berg, Christer Hedlund, Hans-Olof Blom, 1994 .

A novel strained Si/sub 0.7/Ge/sub 0.3/ surface-channel pMOSFET with an ALD TiN/Al/sub 2/O/sub 3//HfAlO/sub x//Al/sub 2/O3 gate stack

S.-L. Zhang, J. Olsson, M. Ostling, 2003, IEEE Electron Device Letters.

A physical model for eliminating instabilities in reactive sputtering

Sören Berg, C Nender, H. Blom, 1988 .

The use of process modelling for optimum design of reactive sputtering processes

H. Blom, S. Berg, C. Nender, 1989 .

Dynamic modeling of the process control of reactive sputtering

H. Blom, S. Berg, C. Nender, 1989 .

Modelling of reactive sputtering of titanium boride

H. Blom, S. Berg, T. Larsson, 1989 .

Reactively sputtered ZrN used as an Al/Si diffusion barrier in a Zr contact to silicon

Mikael Östling, Sören Berg, Hans Norström, 1984 .

Mass flow limitations in reactive sputtering

H. Blom, S. Berg, T. Larsson, 1985 .

Simulation and dielectric characterization of reactive dc magnetron cosputtered (Ta2O5)1−x(TiO2)x thin films

J. Olsson, G. Possnert, H. Blom, 2002 .

Investigation of fabrication uniformity and emission reliability of silicon field emitters for use in space

L. Wang, H. Blom, A. Malik, 2006 .

The effect of aluminum oxide incorporation on the material and electrical properties of hafnium oxide on Ge

Jane P. Chang, Jun Lu, H. Blom, 2008 .

Summary Abstract: Spectroscopic diagnostics of photoresist erosion in an aluminum etch plasma

H. Blom, O. Krogh, Y. Melaku, 1987 .

Reactive sputtering of titanium boride

M. Östling, H. Blom, S. Berg, 1989 .

Si/Ti/TiB2/Al structures investigated as contacts in microelectronic devices

H. Blom, S. Berg, T. Larsson, 1989 .

Generation of oxide nanopatterns by combining self-assembly of S-layer proteins and area-selective atomic layer deposition.

Jane P. Chang, B. Dunn, E. Lan, 2008, Journal of the American Chemical Society.

Modeling of multicomponent reactive sputtering

H. Blom, S. Berg, C. Nender, 1991 .

Three-dimensional simulation of surface evolution during growth and erosion

Sören Berg, Ilia Katardjiev, G. Carter, 1994 .

Reactively sputtered titanium boride thin films

M. Östling, H. Blom, S. Berg, 1989 .

Titanium silicide films prepared by reactive sputtering

Mikael Östling, Sören Berg, Hans-Olof Blom, 1985 .

A comparative study of the diffusion barrier properties of TiN and ZrN

Mikael Östling, Sören Berg, Hans Norström, 1986 .

Modeling of reactive sputtering of compound materials

Sören Berg, C Nender, Hans-Olof Blom, 1987 .

Process modeling of reactive sputtering

Sören Berg, C Nender, Hans-Olof Blom, 1989 .

Predicting thin‐film stoichiometry in reactive sputtering

Sören Berg, C Nender, Hans-Olof Blom, 1988 .

The use of nitrogen flow as a deposition rate control in reactive sputtering

H. Blom, S. Berg, T. Larsson, 1986 .

Plasma etching of Hf-based high-k thin films. Part II. Ion-enhanced surface reaction mechanisms

Ryan M. Martin, Jane P. Chang, Hans-Olof Blom, 2009 .

Computer modeling as a tool to predict deposition rate and film composition in the reactive sputtering process

H. Blom, S. Berg, T. Nyberg, 1998 .

Discharge disruptions in a helicon plasma source

C. Hedlund, H. Blom, S. Berg, 1997 .

Engineering epitaxial γ-Al2O3 gate dielectric films on 4H-SiC

Jane P. Chang, M. Toney, Jun Lu, 2007 .

Structural properties of epitaxial γ-Al2O3 (111) thin films on 4H-SiC (0001)

Jane P. Chang, M. Toney, Jun Lu, 2007 .

In-situ etch rate study of HfxLayOz in Cl2/BCl3 plasmas using the quartz crystal microbalance

Jane P. Chang, N. Marchack, H. Blom, 2015 .

Selective SiO2-to-Si3N4 etching in inductively coupled fluorocarbon plasmas: Angular dependence of SiO2 and Si3N4 etching rates

C. Hedlund, H. Blom, G. Oehrlein, 1998 .

Influence of different etching mechanisms on the angular dependence of silicon nitride etching

H. Blom, A. Barklund, 1993 .

Influence of polymer formation on the angular dependence of reactive ion beam etching

H. Blom, A. Barklund, 1992 .

Angular dependence of the polysilicon etch rate during dry etching in SF6 and Cl2

Sören Berg, Ilia Katardjiev, Christer Hedlund, 1997 .

Selective SiO 2 -to-Si 3 N 4 etching in inductively coupled fluorocarbon plasmas: Angular dependence of SiO 2 and Si 3 N 4 etching rates

C. Hedlund, H. Blom, G. Oehrlein, 1998 .

Nanostructure and temperature-dependent photoluminescence of Er-doped Y2O3 thin films for micro-optoelectronic integrated circuits

Kang L. Wang, Jane P. Chang, R. Ostroumov, 2006 .

Effects of post-deposition annealing on the material characteristics of ultrathin HfO2 films on silicon

Ju H. Choi, Jane P. Chang, P. Pianetta, 2005 .

Summary Abstract: Removal of reactive sputter etching induced damage in silicon

C. Petersson, M. Östling, H. Blom, 1986 .

Structural and Morphological Properties of Ultrathin HfO2 Dielectrics on 4H-SiC (0001)

Jane P. Chang, Jun Lu, H. Blom, 2006 .

Dc-etching of poly-silicon with fluorine chemistry

H. Blom, S. Berg, H. Norström, 1988 .

Silicon surface damage caused by reactive ion etching in fluorocarbon gas mixtures containing hydrogen

J. Keinonen, A. Larsen, M. Östling, 1991 .

Controlled topography production - True 3D simulation and experiment

Sören Berg, Ilia Katardjiev, Lars Jonsson, 1995 .

Generation of oxide nanopatterns by combining self-assembly of S-layer proteins and area-selective atomic layer deposition.

B. Dunn, E. Lan, D. R. Banatao, 2008, Journal of the American Chemical Society.

Midinfrared picosecond spectroscopy studies of Auger recombination in InSb.

Norman, Phillips, K. Vodopyanov, 1995, Physical review. B, Condensed matter.

Piezoresistive and self-actuated 128-cantilever arrays for nanotechnology applications

Teodor Gotszalk, P. Grabiec, Klaus Edinger, 2007 .