D. Pons

发表

Electron and hole capture cross-sections at deep centers in gallium arsenide

A. Mircea, D. Pons, A. Mircea, 1979 .

Energy dependence of deep level introduction in electron irradiated GaAs

P. Mooney, J. Bourgoin, D. Pons, 1980 .

An annealing study of electron irradiation‐induced defects in GaAs

A. Mircea, J. Bourgoin, D. Pons, 1980 .

Anisotropic-Defect Introduction in GaAs by Electron Irradiation

J. Bourgoin, D. Pons, 1981 .

Anisotropy of defect introduction by electron irradiation in compound semiconductors

D. Pons, 1984 .

Determination of the free energy level of deep centers, with application to GaAs

D. Pons, 1980 .

Accurate determination of the free carrier capture kinetics of deep traps by space‐charge methods

D. Pons, 1984 .

Irradiation-induced defects in GaAs

J. Bourgoin, D. Pons, J C Bourgoin, 1985 .

Detailed electrical characterisation of the deep Cr acceptor in GaAs

A. Mircea, A. Mitonneau, G. Martin, 1980 .

Anisotropic defect introduction in n and p-GaAs by electron irradiation

D. Pons, 1983 .

Depleted layer spectroscopy

S. Makram-Ebeid, A. Mircea, D. Pons, 1980 .

Phonon assisted tunnel emission of electrons from deep levels in GaAs

D. Pons, S. Makram-Ebeid, S. Makram-Ebeid, 1979 .

Atomic Number Determination of Energetic Heavy Ions by Energy Loss Measurements Using Planar Si Detectors

D. Pons, D. Pons, D. Guillemaud-Mueller, 1986, IEEE Transactions on Nuclear Science.