D. Delagebeaudeuf

发表

Two-dimensional electron gas m.e.s.f.e.t. structure

D. Delagebeaudeuf, M. Laviron, D. Delagebeaudeuf, 1980 .

Metal-(n) AlGaAs-GaAs two-dimensional electron gas FET

D. Delagebeaudeuf, N. Linh, 1982, IEEE Transactions on Electron Devices.

12 GHz High Power GaAs/Si MESFETs

B. Gérard, D. Delagebeaudeuf, M. Laviron, 1989 .

A new relationship between the Fukui coefficient and optimal current value for low-noise operation of field-effect transistors

D. Delagebeaudeuf, P. Delescluse, M. Laviron, 1985, IEEE Electron Device Letters.

Tunnelling through GaAs-AlxGa1-xAs-GaAs double heterojunctions

J. Massies, D. Delagebeaudeuf, P. Delescluse, 1982 .

Planar enhancement mode two-dimensional electron gas FET associated with a low AlGaAs surface potential

D. Delagebeaudeuf, P. Delescluse, M. Laviron, 1982 .

High-speed two-dimensional electron-gas FET logic

D. Delagebeaudeuf, P. Delescluse, M. Laviron, 1982 .

Transport properties in GaAs-Al x Ga 1-x As heterostructures and MESFET application

D. Delagebeaudeuf, P. Delescluse, M. Laviron, 1981 .

Charge control of the heterojunction two-dimensional electron gas for MESFET application

D. Delagebeaudeuf, N. Linh, 1981, IEEE Transactions on Electron Devices.

Microwave Performances of GaAlAs/GaAs Heterostructure Devices

D. Delagebeaudeuf, J. Chevrier, 1986 .

Low-noise two-dimensional electron gas FET

D. Delagebeaudeuf, P. Delescluse, M. Laviron, 1981 .

Low noise normally on and normally off two‐dimensional electron gas field‐effect transistors

D. Delagebeaudeuf, P. Delescluse, P. Etienne, 1982 .

Two-Dimensional Electron Gas Fet (TEGFET)

D. Delagebeaudeuf, N. Linh, 1984 .

High-speed low-power DCFL using planar two-dimensional electron gas FET technology

D. Delagebeaudeuf, M. Laviron, D. Delagebeaudeuf, 1982 .

Ultra low noise and high frequency operation of TEGFETS made by MBE

D. Delagebeaudeuf, P. Delescluse, M. Laviron, 1985 .