J. Chaplart

发表

Two-dimensional electron gas m.e.s.f.e.t. structure

D. Delagebeaudeuf, M. Laviron, D. Delagebeaudeuf, 1980 .

Tunnelling through GaAs-AlxGa1-xAs-GaAs double heterojunctions

J. Massies, D. Delagebeaudeuf, P. Delescluse, 1982 .

Planar enhancement mode two-dimensional electron gas FET associated with a low AlGaAs surface potential

D. Delagebeaudeuf, P. Delescluse, M. Laviron, 1982 .

High-speed two-dimensional electron-gas FET logic

D. Delagebeaudeuf, P. Delescluse, M. Laviron, 1982 .

Transport properties in GaAs-Al x Ga 1-x As heterostructures and MESFET application

D. Delagebeaudeuf, P. Delescluse, M. Laviron, 1981 .

Monocrystalline aluminium ohmic contact to n‐GaAs by H2S adsorption

J. Massies, M. Laviron, J. Chaplart, 1981 .

New results in the study of the aluminium epitaxial growth on gallium arsenide (001)

J. Massies, J. Chaplart, N. Linh, 1979 .

Low-noise two-dimensional electron gas FET

D. Delagebeaudeuf, P. Delescluse, M. Laviron, 1981 .

Low noise normally on and normally off two‐dimensional electron gas field‐effect transistors

D. Delagebeaudeuf, P. Delescluse, P. Etienne, 1982 .

High-speed low-power DCFL using planar two-dimensional electron gas FET technology

D. Delagebeaudeuf, M. Laviron, D. Delagebeaudeuf, 1982 .