N. Labat

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Bias dependence of LF drain and gate noise in GaN HEMTs

Nathalie Labat, Nathalie Malbert, Arnaud Curutchet, 2004 .

Evidence of traps creation in GaN/AlGaN/GaN HEMTs after a 3000 hour on-state and off-state hot-electron stress

S. Delage, G. Meneghesso, F. Rampazzo, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

Investigation of gate and drain leakage currents of AlGaN/GaN HEMTs at subthreshold regime for temperature range 300K – 400K

L. Brunel, N. Labat, B. Lambert, 2013, 2013 European Microwave Integrated Circuit Conference.

Schottky gate of AlGaN/GaN HEMTs: Investigation with DC and low frequency noise measurements after 7000 hours HTOL test

L. Brunel, N. Labat, B. Lambert, 2015, 2015 International Conference on Noise and Fluctuations (ICNF).

Analysis of InP/GaAsSb DHBT failure mechanisms under accelerated aging tests

G. A. Koné, H. Maher, C. Maneux, 2012, 2012 International Conference on Indium Phosphide and Related Materials.

Low frequency noise as a reliability diagnostic tool in compound semiconductor transistors

Nathalie Labat, Nathalie Malbert, Cristell Maneux, 2004, Microelectron. Reliab..

Reliability assessment in different HTO test conditions of AlGaN/GaN HEMTs

J. Bluet, V. Hoel, N. Malbert, 2010, 2010 IEEE International Reliability Physics Symposium.

Investigation of trap induced power drift on 0.15 μm GaN technology after aging tests

N. Malbert, N. Labat, A. Curutchet, 2019, Microelectronics Reliability.

Submicrometer InP/InGaAs DHBT Architecture Enhancements Targeting Reliability Improvements

T. Zimmer, N. Labat, C. Maneux, 2013, IEEE Transactions on Electron Devices.

Electrical Runaway in AlGaN/GaN HEMTs: Physical Mechanisms and Impact on Reliability

N. Malbert, N. Labat, A. Curutchet, 2017, IEEE Transactions on Electron Devices.

Electrical degradation of CMOS devices due to focused ion beam exposure

P. Perdu, A. Touboul, N. Labat, 1998, 1998 3rd International Symposium on Plasma Process-Induced Damage (Cat. No.98EX100).

High current effects in InP/GaAsSb/InP DHBT: Physical mechanisms and parasitic effects

Mohamed Belhaj, Nathalie Labat, André Touboul, 2003, Microelectron. Reliab..

A GaAsSb/InP HBT circuit technology

A. Konczykowska, R. Langer, C. Maneux, 2005, European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005.

A GaAsSb/InP HBT ci

Route de Nozay, A. Konczykowska, R. Langer, 2005 .

New barrier layer design for the fabrication of gallium nitride-metal-insulator-semiconductor-high electron mobility transistor normally-off transistor

Y. Cordier, A. Soltani, A. Jaouad, 2021, Semiconductor Science and Technology.

Selective GaN sublimation and local area regrowth for co-integration of enhancement mode and depletion mode Al(Ga)N/GaN high electron mobility transistors

J. Brault, Y. Cordier, S. Chenot, 2020 .

Stability of the threshold voltage in fluorine-implanted normally-off AlN/GaN HEMTs co-integrated with commercial normally-on GaN HEMT technology

Y. Cordier, H. Maher, N. Malbert, 2021, Microelectronics Reliability.

Temperature dependent degradation modes in AlGaN/GaN HEMTs

J. Bluet, V. Hoel, N. Malbert, 2010, The 5th European Microwave Integrated Circuits Conference.

Gate and drain low frequency noise of ALGAN/GAN HEMTs featuring high and low gate leakage currents

N. Labat, J. Tartarin, S. Karboyan, 2013, 2013 22nd International Conference on Noise and Fluctuations (ICNF).

Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors

J. Brault, Y. Cordier, S. Chenot, 2021, Solid-State Electronics.

Methodology to compare on-state breakdown loci of GaAs FET's

A. Touboul, N. Malbert, N. Labat, 2004, Proceedings. The 16th International Conference on Microelectronics, 2004. ICM 2004..

Kink effect in HEMT structures: A trap-related semi-quantitative model and an empirical approach for spice simulation

T. Zimmer, A. Touboul, N. Labat, 1992 .

Low frequency gate noise in a diode-connected MESFET: measurements and modeling

L. Vandamme, A. Touboul, N. Malbert, 2001 .

Study of passivation defects by electroluminescence in AlGaN/GaN HEMTS on SiC

G. Pataut, Nathalie Labat, Nathalie Malbert, 2007, Microelectron. Reliab..

Safe operating area of GaAs MESFET for nonlinear applications

D. Langrez, N. Labat, A. Touboul, 2006, IEEE Transactions on Device and Materials Reliability.

Safe operating area of GaAs MESFET and PHEMT for amplification in overdrive operating conditions

Nathalie Labat, Nathalie Malbert, André Touboul, 2005, Microelectron. Reliab..

Investigation of the trap-limited transient response of GaN HEMTs

N. Malbert, N. Labat, A. Curutchet, 2018, 2018 International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMIC).

Investigation of trapping behaviour in GaN HEMTs through physical TCAD simulation of capacitance voltage characteristics

N. Malbert, N. Labat, A. Curutchet, 2018, 2018 19th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE).

TCAD simulation capabilities towards gate leakage current analysis of advanced AlGaN/GaN HEMT devices

N. Labat, F. Darracq, N. Malbert, 2017, Microelectron. Reliab..

Kink effect characterization in AlGaN/GaN HEMTs by DC and drain current transient measurements

Nathalie Labat, Nathalie Malbert, Benoit Lambert, 2012, 2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

Characterisation and modelling of parasitic effects and failure mechanisms in AlGaN/GaN HEMTs

Nathalie Labat, Nathalie Malbert, Arnaud Curutchet, 2009, Microelectron. Reliab..

Analysis of traps effect on AlGaN/GaN HEMT by luminescence techniques

Nathalie Labat, Nathalie Malbert, Benoit Lambert, 2008, Microelectron. Reliab..

Experimental procedure for the evaluation of GaAs-based HBT's reliability

Cristell Maneux, N. Labat, A. Touboul, 2001 .

Reliability evaluation of GaAs HBT technologies

C. Maneux, A. Touboul, N. Labat, 1999, 1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401).

Analysis of Two Degradation Mechanisms in GaInP/GaAs Fully Planar HBT Technology

C. Maneux, A. Touboul, N. Malbert, 1999 .

Analysis of GaAs HBT failure mechanisms: impact on life test strategy

C. Maneux, A. Touboul, N. Labat, 1997, Proceedings of the 1997 6th International Symposium on the Physical and Failure Analysis of Integrated Circuits.

Analysis of the surface base current drift in GaAs HBT's

C. Maneux, N. Labat, Y. Danto, 1996, Proceedings of the 7th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis.

Reliability of submicron InGaAs/InP DHBT under thermal and electrical stresses

François Marc, Thomas Zimmer, Nathalie Labat, 2011, Microelectron. Reliab..

Link between low frequency noise and reliability of compound semiconductor HEMTs and HBTs

N. Labat, C. Maneux, B. Grandchamp, 2011, 2011 21st International Conference on Noise and Fluctuations.

Preliminary results of storage accelerated aging test on InP/GaAsSb DHBT

François Marc, Thomas Zimmer, Nathalie Labat, 2010, IPRM 2011 - 23rd International Conference on Indium Phosphide and Related Materials.

Evaluation of quasi-hermetic packaging solutions for active microwave devices and space applications

P. Monfraix, N. Labat, H. Fremont, 2012, 2012 13th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems.

A methodology to delimit the on-state safe operating area of GaAs MESFET for non linear applications

N. Labat, A. Touboul, J.L. Muraro, 2005, Proceedings of the 12th International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2005. IPFA 2005..

On-state safe operating area of GaAs MESFET defined for non linear applications

A. Touboul, N. Malbert, N. Labat, 2005, European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005.

Analysis of hot electron degradations in pseudomorphic HEMTs by DCTS and LF noise characterization

F. Fantini, P. Cova, A. Touboul, 1997 .

Comparison of conventional and pseudomorphic HEMTs performances by drain current transient spectroscopy and L.F. channel noise

Jean-Michel Dumas, Nathalie Labat, Nathalie Saysset, 1996 .

Reliability of Fan-Out Wafer Level Packaging For III-V RF Power MMICs

N. Malbert, N. Labat, H. Frémont, 2021, 2021 IEEE 71st Electronic Components and Technology Conference (ECTC).

Analysis of Schottky gate degradation evolution in AlGaN/GaN HEMTs during HTRB stress

D. Floriot, Hervé Blanck, Nathalie Labat, 2013, Microelectron. Reliab..

Investigation of the dynamic on-state resistance of AlGaN/GaN HEMTs

Nathalie Labat, Nathalie Malbert, Benoit Lambert, 2015, Microelectron. Reliab..

Low frequency drain noise comparison of AlGaN/GaN HEMT's grown on silicon, SiC and sapphire substrates

Nathalie Labat, Nathalie Malbert, André Touboul, 2003, Microelectronics and reliability.