A. Curutchet

发表

Bias dependence of LF drain and gate noise in GaN HEMTs

Nathalie Labat, Nathalie Malbert, Arnaud Curutchet, 2004 .

Evidence of traps creation in GaN/AlGaN/GaN HEMTs after a 3000 hour on-state and off-state hot-electron stress

S. Delage, G. Meneghesso, F. Rampazzo, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

Investigation of gate and drain leakage currents of AlGaN/GaN HEMTs at subthreshold regime for temperature range 300K – 400K

L. Brunel, N. Labat, B. Lambert, 2013, 2013 European Microwave Integrated Circuit Conference.

Schottky gate of AlGaN/GaN HEMTs: Investigation with DC and low frequency noise measurements after 7000 hours HTOL test

L. Brunel, N. Labat, B. Lambert, 2015, 2015 International Conference on Noise and Fluctuations (ICNF).

Reliability assessment in different HTO test conditions of AlGaN/GaN HEMTs

J. Bluet, V. Hoel, N. Malbert, 2010, 2010 IEEE International Reliability Physics Symposium.

Investigation of trap induced power drift on 0.15 μm GaN technology after aging tests

N. Malbert, N. Labat, A. Curutchet, 2019, Microelectronics Reliability.

Meander-Type Transmission Line Design for On-Wafer TRL Calibration up to 330 GHz

S. Frégonèse, T. Zimmer, D. Céli, 2021, 2020 50th European Microwave Conference (EuMC).

Electrical Runaway in AlGaN/GaN HEMTs: Physical Mechanisms and Impact on Reliability

N. Malbert, N. Labat, A. Curutchet, 2017, IEEE Transactions on Electron Devices.

Ballistic nanodevices for high frequency applications

C. Gaquière, X. Wallart, J. Mateos, 2008 .

Stability of the threshold voltage in fluorine-implanted normally-off AlN/GaN HEMTs co-integrated with commercial normally-on GaN HEMT technology

Y. Cordier, H. Maher, N. Malbert, 2021, Microelectronics Reliability.

Temperature dependent degradation modes in AlGaN/GaN HEMTs

J. Bluet, V. Hoel, N. Malbert, 2010, The 5th European Microwave Integrated Circuits Conference.

Investigation of the trap-limited transient response of GaN HEMTs

N. Malbert, N. Labat, A. Curutchet, 2018, 2018 International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMIC).

Investigation of trapping behaviour in GaN HEMTs through physical TCAD simulation of capacitance voltage characteristics

N. Malbert, N. Labat, A. Curutchet, 2018, 2018 19th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE).

TCAD simulation capabilities towards gate leakage current analysis of advanced AlGaN/GaN HEMT devices

N. Labat, F. Darracq, N. Malbert, 2017, Microelectron. Reliab..

Kink effect characterization in AlGaN/GaN HEMTs by DC and drain current transient measurements

Nathalie Labat, Nathalie Malbert, Benoit Lambert, 2012, 2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

Characterisation and modelling of parasitic effects and failure mechanisms in AlGaN/GaN HEMTs

Nathalie Labat, Nathalie Malbert, Arnaud Curutchet, 2009, Microelectron. Reliab..

Long-Term Stable Organic Photodetectors with Ultra Low Dark Currents for High Detectivity Applications

Arnaud Curutchet, Lionel Hirsch, Olivier Dhez, 2016, Scientific Reports.

On the development of a novel high VSWR programmable impedance tuner

Eric Kerherve, Thomas Zimmer, Anthony Ghiotto, 2016, International Journal of Microwave and Wireless Technologies.

Link between low frequency noise and reliability of compound semiconductor HEMTs and HBTs

N. Labat, C. Maneux, B. Grandchamp, 2011, 2011 21st International Conference on Noise and Fluctuations.

Robust Surface-Potential-Based Compact Model for GaN HEMT IC Design

Thomas Zimmer, Yogesh Singh Chauhan, Tor A. Fjeldly, 2013, IEEE Transactions on Electron Devices.

Three-terminal junctions operating as mixers, frequency doublers and detectors: a broad-band frequency numerical and experimental study at room temperature

J. Mateos, T. González, D. Pardo, 2010 .

Analysis of Schottky gate degradation evolution in AlGaN/GaN HEMTs during HTRB stress

D. Floriot, Hervé Blanck, Nathalie Labat, 2013, Microelectron. Reliab..

Investigation of the dynamic on-state resistance of AlGaN/GaN HEMTs

Nathalie Labat, Nathalie Malbert, Benoit Lambert, 2015, Microelectron. Reliab..

Low frequency drain noise comparison of AlGaN/GaN HEMT's grown on silicon, SiC and sapphire substrates

Nathalie Labat, Nathalie Malbert, André Touboul, 2003, Microelectronics and reliability.

AlGaN/GaN HEMT Reliability Assessment by means of Low Frequency Noise Measurements

Nathalie Labat, Nathalie Malbert, André Touboul, 2006, Microelectron. Reliab..