M.A. Khan

发表

Field-plate engineering for HFETs

G. Simin, S. Karmalkar, M.A. Khan, 2005, IEEE Transactions on Electron Devices.

Thermal management of AlGaN-GaN HFETs on sapphire using flip-chip bonding with epoxy underfill

G. Simin, A. Koudymov, M.A. Khan, 2003, IEEE Electron Device Letters.

Monolithically integrated high-power broad-band RF switch based on III-N insulated gate transistors

G. Simin, M. Khan, V. Adivarahan, 2004, IEEE Microwave and Wireless Components Letters.

The 1.6-kV AlGaN/GaN HFETs

G. Simin, M.A. Khan, J. Yang, 2006, IEEE Electron Device Letters.

A new assessment of the use of wide bandgap semiconductors and the potential for GaN

Jerry L. Hudgins, Grigory Simin, J. Hudgins, 2002, 2002 IEEE 33rd Annual IEEE Power Electronics Specialists Conference. Proceedings (Cat. No.02CH37289).

AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor

A. Lunev, M.A. Khan, J. Yang, 2000, IEEE Electron Device Letters.

0.12-μm gate III-V nitride HFET's with high contact resistances

M.A. Khan, M. Shur, J. Yang, 1997, IEEE Electron Device Letters.

High-power RF switching using III-nitride metal-oxide-semiconductor heterojunction capacitors

G. Simin, V. Adivarahan, J. Yang, 2005, IEEE Electron Device Letters.

AlGaN-GaN HEMTs on SiC with CW power performance of >4 W/mm and 23% PAE at 35 GHz

P. Saunier, C. Lee, M.A. Khan, 2003, IEEE Electron Device Letters.

High performance 0.14 /spl mu/m gate-length AlGaN/GaN power HEMTs on SiC

A. Crespo, M.A. Khan, J. Yang, 2003, IEEE Electron Device Letters.

High-power operation of III-N MOSHFET RF switches

G. Simin, V. Adivarahan, J. Yang, 2005, IEEE Microwave and Wireless Components Letters.

Ferroelectric BiFeO/sub 3/-PbTiO/sub 3/ thin films on Pt/Si substrates

A. Bell, T. Comyn, M.A. Khan, 2007, IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control.

Synthesis of the Ferroelectric Solid Solution, Pb(Zr1-xTix)O3 on a Single Substrate Using a Modified Molecular Beam Epitaxy (MBE) Technique

A. Bell, I. Reaney, M.A. Khan, 2007, 2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics.

Low-frequency noise and performance of GaN p-n junction photodetectors

H. Temkin, M.A. Khan, R. Gaska, 1997, International Electron Devices Meeting. IEDM Technical Digest.

Microwave operation of GaN/AlGaN-doped channel heterostructure field effect transistors

M.A. Khan, M. Shur, J. Yang, 1996, IEEE Electron Device Letters.

Submicron gate Si3N4/AlGaN/GaN-metal-insulator-semiconductor heterostructure field-effect transistors

A. Tarakji, G. Simin, A. Koudymov, 2003, IEEE Electron Device Letters.

Detection of Photosystem I Reaction Centers using Chemically Derivatized High Electron Mobility Transistor

M. Ericson, S. Islam, E. Greenbaum, 2007, 2007 IEEE Sensors.

Impedance Spectroscopy of Mn-Doped BiFeO3-PbTiO3 Ceramics

A. Bell, M. Alduraibi, T. Comyn, 2006, 2006 15th ieee international symposium on the applications of ferroelectrics.

High-power microwave 0.25-μm gate doped-channel GaN/AlGaN heterostructure field effect transistor

I. Adesida, M.A. Khan, M. Shur, 1998, IEEE Electron Device Letters.

Temperature-Dependent RF Large-Signal Model of GaN-Based MOSHFETs

Jie Deng, M.A. Khan, Weike Wang, 2008, IEEE Transactions on Microwave Theory and Techniques.

Reliability evaluation of AlGaN/GaN HEMTs grown on SiC substrate

H. Wang, J. Yang, H. Tserng, 2002, Proceedings. IEEE Lester Eastman Conference on High Performance Devices.

Millimeter-wave high-power 0.25-/spl mu/m gate-length AlGaN/GaN HEMTs on SiC substrates

G. Simin, M.E. Muir, I. Adesida, 2003, IEEE Microwave and Wireless Components Letters.

Stable CW operation of field-plated GaN-AlGaN MOSHFETs at 19 W/mm

G. Simin, A. Koudymov, M.A. Khan, 2005, IEEE Electron Device Letters.

AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates

Michael S. Shur, Alexey Koudymov, Grigory Simin, 2000 .

DC and microwave performance of high-current AlGaN/GaN heterostructure field effect transistors grown on p-type SiC substrates

I. Adesida, M.A. Khan, J. Yang, 1998, IEEE Electron Device Letters.

Recent advances in III-V nitride electron devices

M. Shur, L. Eastman, J. Yang, 1996, International Electron Devices Meeting. Technical Digest.

Synthesis and characterization of Zn/ZnO microspheres on indented sites of silicon substrate

M.A. Khan, A. Majid, Nasar Ahmed, 2018, Materials Science-Poland.

Low frequency noise in GaN-based transistors

M. Shur, N. Pala, M. Levinshtein, 2000, Proceedings 2000 IEEE/ Cornell Conference on High Performance Devices (Cat. No.00CH37122).