F. Danesin

False surface-trap signatures induced by buffer traps in AlGaN-GaN HEMTs

G. Verzellesi, F. Fantini, G. Meneghesso, 2009, 2009 IEEE International Reliability Physics Symposium.

Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives

G. Verzellesi, M. Meneghini, G. Meneghesso, 2008, IEEE Transactions on Device and Materials Reliability.

Localized Damage in AlGaN/GaN HEMTs Induced by Reverse-Bias Testing

M. Meneghini, G. Meneghesso, M. Peroni, 2009, IEEE Electron Device Letters.

Evidence of traps creation in GaN/AlGaN/GaN HEMTs after a 3000 hour on-state and off-state hot-electron stress

S. Delage, G. Meneghesso, F. Rampazzo, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

Localized Damage in AlGaN/GaN HEMTs

M. Meneghini, G. Meneghesso, M. Peroni, 2009 .

Stress, Overstress and Strain on AlGaN/GaN HEMT Devices

F. Danesin, 2008 .

A review of failure modes and mechanisms of GaN-based HEMTs

G. Meneghesso, M. Meneghini, A. Tazzoli, 2007, 2007 IEEE International Electron Devices Meeting.

Mechanisms of RF Current Collapse in AlGaN–GaN High Electron Mobility Transistors

G. Meneghesso, F. Fantini, E. Zanoni, 2008, IEEE Transactions on Device and Materials Reliability.

Thermal storage effects on AlGaN/GaN HEMT

Claudio Lanzieri, Gaudenzio Meneghesso, Marco Peroni, 2008, Microelectron. Reliab..