Y. Pei

Y. Pei, N. Zhang, Chenggong Yin, 2015, 2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP).

A comparative study of effects of SiNx deposition method on AlGaN/GaN heterostructure field-effect transistors

T. Mimura, U. Mishra, S. Keller, 2009 .

High-efficiency class E MMIC power amplifiers at 4.0 GHz using AlGaN/GaN HEMT technology

U. Mishra, R. York, Y. Pei, 2010, 2010 IEEE MTT-S International Microwave Symposium.

N-Polar GaN/AlN MIS-HEMT for Ka-Band Power Applications

Nidhi, U. Mishra, J. Speck, 2010, IEEE Electron Device Letters.

$f_{T}$ and $f_{\rm MAX}$ of 47 and 81 GHz , Respectively, on N-Polar GaN/AlN MIS-HEMT

Nidhi, S. Keller, U. Mishra, 2009, IEEE Electron Device Letters.

Deep submicron AlGaN/GaN HEMTs with ion implanted source/drain regions and non-alloyed ohmic contacts

S. Denbaars, F. Recht, N. Fichtenbaum, 2007 .

Anisotropic Signal Processing with Trigonal Selenium Nanosheet Synaptic Transistors.

S. Lau, Y. Chai, P. Ye, 2020, ACS nano.

Study of the n+ GaN Cap in AlGaN/GaN High Electron Mobility Transistors with Reduced Source–Drain Resistance

S. Denbaars, T. Palacios, N. Fichtenbaum, 2007 .

Growth of AlGaN/GaN/AlGaN double heterojunction field-effect transistors and the observation of a compositional pulling effect

S. Denbaars, S. Nakamura, S. Keller, 2009 .

The Kink Effect at Cryogenic Temperatures in Deep Submicron AlGaN/GaN HEMTs

S. Keller, R. Cuerdo, F. Calle, 2009, IEEE Electron Device Letters.

High performance MBE-grown N-face microwave GaN HEMTs with >70% PAE

U. Mishra, J. Speck, S. Keller, 2009, 2009 Device Research Conference.

MOCVD-Grown AlGaN Buffer GaN HEMTs With V-Gates for Microwave Power Applications

Rongming Chu, S. Denbaars, U. Mishra, 2009, IEEE Electron Device Letters.

RF Performance of N-Polar AlGaN/GaN MIS-HEMTs Grown by MOCVD on Sapphire Substrate

S. Kolluri, S. Keller, S. Denbaars, 2009, IEEE Electron Device Letters.

Improved Performance of Plasma-Assisted Molecular Beam Epitaxy Grown AlGaN/GaN High Electron Mobility Transistors with Gate-Recess and CF4-Treatment

F. Recht, U. Mishra, J. Speck, 2008 .

Band bending caused by forming heterojunctions in Cu-Cu2O/rGO-NH2 semiconductor materials and surface coordination of N-methylimidazole, and the intrinsic nature of synergistic effect on the catalysis of selective aerobic oxidation of alcohols

Xiaoming Liu, Y. Pei, W. Zhong, 2022, Applied Surface Science.

Integrated Optical and Electrical Analysis: Identifying Location and Properties of Traps in AlGaN/GaN HEMTs During Electrical Stress

Martin Kuball, U. Mishra, M. Ťapajna, 2010, IEEE Electron Device Letters.

Direct observation of 0.57 eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors

Steven A. Ringel, Umesh K. Mishra, Siddharth Rajan, 2013 .

Effects of Barrier Thinning on Small-Signal and 30-GHz Power Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistors

U. Mishra, Y. Pei, M. Higashiwaki, 2011, IEEE Transactions on Electron Devices.

Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy

Steven A. Ringel, Umesh K. Mishra, S. P. DenBaars, 2013 .

Next generation defect characterization in nitride HEMTs

Steven A. Ringel, Christiane Poblenz, James S. Speck, 2011 .

$f_{T}$ and $f_{\rm MAX}$ of 47 and 81 GHz , Respectively, on N-Polar GaN/AlN MIS-HEMT

James S. Speck, Umesh K. Mishra, Nidhi, 2009 .

N-Face Metal–Insulator–Semiconductor High-Electron-Mobility Transistors With AlN Back-Barrier

Rongming Chu, S. Keller, Man Hoi Wong, 2008, IEEE Electron Device Letters.

Effects of gate shaping and consequent process changes on AlGaN/GaN HEMT reliability

Umesh K. Mishra, Martin Kuball, Michael J. Uren, 2012 .

Improved performance of HEMTs with BN as heat dissipation

Y. Chai, Changjian Zhou, Y. Pei, 2016, 2016 IEEE International Nanoelectronics Conference (INEC).

Temperature‐dependent high‐frequency performance of deep submicron AlGaN/GaN HEMTs

S. Denbaars, F. Recht, N. Fichtenbaum, 2008 .

Ge-spacer technology in AlGaN/GaN HEMTs for mm-wave applications

S. Keller, S. Denbaars, T. Palacios, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

Accurate Temperature Estimation for Each Gate of GaN HEMT With n-Gate Fingers

F. Lin, Y. Pei, E. Ryndin, 2020, IEEE Transactions on Electron Devices.

Low nonalloyed Ohmic contact resistance to nitride high electron mobility transistors using N-face growth

James S. Speck, Umesh K. Mishra, Tomas Palacios, 2007 .

An Estimation of 2DEG Density for GaN HEMT Using Analytical Equation Considering the Charge conservation Low

Y. Pei, F. Lin, E. Ryndin, 2021, Solid-State Electronics.

A Comparative Analysis of S-S and LCCL-S Compensation for Wireless Power Transfer with a Wide Range Load Variation

Y. Pei, Hao Wu, Fan Li, 2022, Electronics.

Pulsed-IV Pulsed-RF Cold-FET Parasitic Extraction of Biased AlGaN/GaN HEMTs Using Large Signal Network Analyzer

Patrick Roblin, Christiane Poblenz, Siddharth Rajan, 2010, IEEE Transactions on Microwave Theory and Techniques.

Additive phase noise measurements of AlGaN/GaN HEMTs using a large signal network analyzer and a tunable monochromatic light source

Patrick Roblin, Andrew Malonis, Christiane Poblenz, 2009, 2009 74th ARFTG Microwave Measurement Conference.