Maojun Wang

发表

Kink Effect in AlGaN/GaN HEMTs Induced by Drain and Gate Pumping

Maojun Wang, K. J. Chen, Maojun Wang, 2011, IEEE Electron Device Letters.

Investigation of Surface- and Buffer-Induced Current Collapse in GaN High-Electron Mobility Transistors Using a Soft Switched Pulsed $I-V$ Measurement

Yilong Hao, Wengang Wu, Dawei Yan, 2014, IEEE Electron Device Letters.

Ultrathin-Barrier AlGaN/GaN Heterostructure: A Recess-Free Technology for Manufacturing High-Performance GaN-on-Si Power Devices

Kevin J. Chen, Sen Huang, Xinyu Liu, 2018, IEEE Transactions on Electron Devices.

High-Performance Normally-Off ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}$ MOSFET Using a Wet Etching-Based Gate Recess Technique

Yilong Hao, Wengang Wu, Kevin J. Chen, 2013, IEEE Electron Device Letters.

Al2O3/AlN/GaN MOS-Channel-HEMTs With an AlN Interfacial Layer

Kevin J. Chen, Q. Jiang, Shu Yang, 2014, IEEE Electron Device Letters.

The effect of kink and vertical leakage mechanisms in GaN-on-Si epitaxial layers

Maojun Wang, B. Shen, Xuelin Yang, 2020, Semiconductor Science and Technology.

Vacancy-engineering-induced dislocation inclination in III-nitrides on Si substrates

W. Ge, Maojun Wang, Fujun Xu, 2020 .

Quasi-Vertical GaN Schottky Barrier Diode on Silicon Substrate With 1010 High On/Off Current Ratio and Low Specific On-Resistance

C. Wen, Maojun Wang, B. Xie, 2020, IEEE Electron Device Letters.

Kilovolt GaN MOSHEMT on silicon substrate with breakdown electric field close to the theoretical limit

C. Wen, Wengang Wu, Maojun Wang, 2017, 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD).

Buffer-Induced Time-Dependent OFF-State Leakage in AlGaN/GaN High Electron Mobility Transistors on Silicon

C. Wen, Wengang Wu, Maojun Wang, 2016, IEEE Transactions on Electron Devices.

An “ohmic-first” self-terminating gate-recess technique for normally-off Al2O3/GaN MOSFET

Yandong He, Wengang Wu, Mengjun Li, 2018 .

Growth Optimization of Low-Pressure Chemical Vapor Deposition Silicon Nitride Film

Xinnan Lin, Maojun Wang, Yufeng Jin, 2021, 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).

Planar Dual Gate GaN HEMT Cascode Amplifier as a Voltage Readout pH Sensor With High and Tunable Sensitivities

Zhenchuan Yang, Maojun Wang, Y. Hao, 2020, IEEE Electron Device Letters.

Investigation of the Trap States and $V_{\text{TH}}$ Instability in LPCVD Si3N4/AlGaN/GaN MIS-HEMTs with an In-Situ Si3N4 Interfacial Layer

Maojun Wang, Y. Hao, Dongmin Chen, 2019, IEEE Transactions on Electron Devices.

Low Leakage Current and High-Cutoff Frequency AlGaN/GaN MOSHEMT Using Submicrometer-Footprint Thermal Oxidized TiO2/NiO as Gate Dielectric

K. Lau, C. Wen, Wengang Wu, 2013, IEEE Electron Device Letters.

Current transport mechanism of Au∕Ni∕GaN Schottky diodes at high temperatures

Z. J. Yang, Yangyuan Wang, Sen Huang, 2007 .

Hysteresis phenomena of the two dimensional electron gas density in lattice-matched InAlN/GaN heterostructures

Xiaodong Wang, Tongjun Yu, W. Ge, 2015 .

1.3 kV Vertical GaN-Based Trench MOSFETs on 4-Inch Free Standing GaN Wafer

H. Chiu, H. Kuo, Xinnan Lin, 2022, Nanoscale Research Letters.

Vertical GaN Schottky barrier diodes on Ge-doped free-standing GaN substrates

Ke Xu, Youming Lu, Yi Zhang, 2019, Journal of Alloys and Compounds.

Normally-off Al 2 O 3 /GaN MOSFET: Role of border traps on the device transport characteristics

Yandong He, Wengang Wu, Maojun Wang, 2017 .

A GaN HEMT Structure Allowing Self-Terminated, Plasma-Free Etching for High-Uniformity, High-Mobility Enhancement-Mode Devices

C. Wen, Wengang Wu, Maojun Wang, 2016, IEEE Electron Device Letters.

Enhancement-Mode AlGaN/GaN HEMTs Fabricated by Standard Fluorine Ion Implantation with a Si3N4 Energy-Absorbing Layer

Kevin J. Chen, Hongwei Chen, Maojun Wang, 2011 .

Optimization of Au-Free Ohmic Contact Based on the Gate-First Double-Metal AlGaN/GaN MIS-HEMTs and SBDs Process

P. Liu, Xinnan Lin, Maojun Wang, 2018, IEEE Transactions on Electron Devices.

Gate-Recessed Normally OFF GaN MOSHEMT With High-Temperature Oxidation/Wet Etching Using LPCVD Si3N4 as the Mask

C. Wen, Maojun Wang, B. Xie, 2018, IEEE Transactions on Electron Devices.

Characterization of 880 V Normally Off GaN MOSHEMT on Silicon Substrate Fabricated With a Plasma-Free, Self-Terminated Gate Recess Process

C. Wen, Wengang Wu, Maojun Wang, 2018, IEEE Transactions on Electron Devices.

Normally-off fully recess-gated GaN metal–insulator–semiconductor field-effect transistor using Al2O3/Si3N4 bilayer as gate dielectrics

Yandong He, Wengang Wu, Mengjun Li, 2017 .

Gate-Recessed Normally-OFF GaN MOSHEMT With Improved Channel Mobility and Dynamic Performance Using AlN/Si3N4 as Passivation and Post Gate-Recess Channel Protection Layers

Kevin J. Chen, C. Wen, Wengang Wu, 2017, IEEE Electron Device Letters.

900 V/1.6 ${\rm m}\Omega\cdot{\rm cm}^{2}$ Normally Off ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}$ MOSFET on Silicon Substrate

Kevin J. Chen, C. Wen, Wengang Wu, 2014, IEEE Transactions on Electron Devices.

Investigation of the threshold voltage drift in enhancement mode GaN MOSFET under negative gate bias stress

C. Wen, Wengang Wu, Maojun Wang, 2015 .

300°C operation of normally-off AlGaN/GaN MOSFET with low leakage current and high on/off current ratio

Xiao-hua Ma, Jincheng Zhang, Wengang Wu, 2014 .

Normally-off hybrid Al2O3/GaN MOSFET on silicon substrate based on wet-etching

Kevin J. Chen, C. Wen, Wengang Wu, 2014, 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Modulation of polarization field by fluorine ions in AlGaN/GaN heterostructures revealed by positron annihilation spectroscopy

Kevin J. Chen, Maojun Wang, C. Beling, 2010 .

Enhanced electroluminescence from the fluorine-plasma implanted Ni/Au-AlGaN/GaN Schottky diode

Kevin J. Chen, Maojun Wang, Baikui Li, 2011 .

Defect formation and annealing behaviors of fluorine-implanted GaN layers revealed by positron annihilation spectroscopy

Kevin J. Chen, Maojun Wang, C. Cheng, 2009 .

Source injection induced off-state breakdown and its improvement by enhanced back barrier with fluorine ion implantation in AlGaN/GaN HEMTs

Maojun Wang, K.J. Chen, 2008, 2008 IEEE International Electron Devices Meeting.

Oxidation-based wet-etching method for AlGaN/GaN structure with different oxidation times and temperatures

Wengang Wu, Maojun Wang, B. Xie, 2013, Rare Metals.

Output Phase and Amplitude Analysis of GaN-Based HEMT at Cryogenic Temperatures

Maojun Wang, Haowen Guo, Xinbo Zou, 2021, IEEE Microwave and Wireless Components Letters.

Temperature-Dependent Dynamic Degradation of Carbon-Doped GaN HEMTs

Baile Chen, Maojun Wang, Yangqian Wang, 2021, IEEE Transactions on Electron Devices.

Locally non-uniform oxidation in self-terminating thermal oxidation assisted wet etching technique for AlGaN/GaN heterostructure

Y. Hao, Xiao-hua Ma, Jincheng Zhang, 2015 .

Investigation of oxidation process in self-terminating gate recess wet etching technique for AlGaN/GaN normally-off MOSFETs

Y. Hao, Jincheng Zhang, Wengang Wu, 2014 .

Bias-Dependent Conduction-Induced Bimodal Weibull Distribution of the Time-Dependent Dielectric Breakdown in GaN MIS-HEMTs

Maojun Wang, Yufeng Jin, Jianguo Chen, 2022, IEEE Transactions on Electron Devices.

Improved Performance of Fully-Recessed High-Threshold-Voltage GaN MIS-HEMT With in Situ H₂/N₂ Plasma Pretreatment

Wengang Wu, J. Mo, Maojun Wang, 2022, IEEE Electron Device Letters.

Electroluminescence from a forward biased Ni/Au–AlGaN/GaN Schottky diode: evidence of Fermi level de‐pinning at Ni/AlGaN interface

Kevin J. Chen, Maojun Wang, Baikui Li, 2010 .

Spatial identification of traps in AlGaN/GaN heterostructures by the combination of lateral and vertical electrical stress measurements

Xiaodong Wang, Z. Qin, W. Ge, 2016 .

Mechanical properties of AlxGa1−xN films with high Al composition grown on AlN/sapphire templates

Z. J. Yang, Z. Qin, G. Y. Zhang, 2007 .

Effective mass of the two-dimensional electron gas and band nonparabolicity in AlxGa1−xN∕GaN heterostructures

Z. J. Yang, G. Y. Zhang, J. Chu, 2006 .

Influence of the magnetic field on the effective mass of the two-dimensional electron gas in Alx Ga1–xN/GaN heterostructures

Z. J. Yang, G. Y. Zhang, J. Chu, 2006 .

An Actively-Passivated p-GaN Gate HEMT With Screening Effect Against Surface Traps

Kevin J. Chen, Maojun Wang, Y. Hao, 2023, IEEE Electron Device Letters.

Interface/border trap characterization of Al2O3/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer

Shu Yang, Cheng Liu, Kevin J. Chen, 2015 .

High Temperature Characteristics of GaN-Based Inverter Integrated With Enhancement-Mode (E-Mode) MOSFET and Depletion-Mode (D-Mode) HEMT

Xiaoping Li, Jinyan Wang, Yong Cai, 2014, IEEE Electron Device Letters.

Observation of inversion behaviors induced by polarization effects in GaN∕AlxGa1−xN∕GaN based metal-insulator-semiconductor structures

Shaoyun Huang, Maojun Wang, B. Shen, 2006 .

Demonstration of Normally-Off Recess-Gated AlGaN/GaN MOSFET Using GaN Cap Layer as Recess Mask

Xiaohua Ma, Yue Hao, Min Yu, 2014, IEEE Electron Device Letters.

Terrace Engineering of the Buffer Layer: Laying the Foundation of Thick GaN Drift Layer on Si Substrates

Xuan Liu, W. Ge, Maojun Wang, 2023, Advanced Electronic Materials.

Growth of high quality and uniformity AlGaN/GaN heterostructures on Si substrates using a single AlGaN layer with low Al composition

Jie Zhang, Ning Tang, Chenguang He, 2016, Scientific Reports.

Fabrication of Normally Off AlGaN/GaN MOSFET Using a Self-Terminating Gate Recess Etching Technique

Xiaohua Ma, Yang Liu, Min Yu, 2013, IEEE Electron Device Letters.

GaN-on-Si Quasi-Vertical p-n Diode With Junction Termination Extension Based on Hydrogen Plasma Treatment and Diffusion

C. Wen, Maojun Wang, B. Xie, 2023, IEEE Transactions on Electron Devices.

High Voltage Vertical GaN-on-GaN Schottky Barrier Diode with High Energy Fluorine Ion Implantation Based on Space Charge Induced Field Modulation (SCIFM) Effect

C. Wen, Maojun Wang, Y. Hao, 2020, 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD).

Correlation Between Reverse Leakage Current and Electric Field Spreading in GaN Vertical SBD With High-Energy Ion Implanted Guard Rings

C. Wen, Maojun Wang, B. Xie, 2023, IEEE Transactions on Electron Devices.

Al-rich AlGaN semiconductor materials and their device applications

Dunjun Chen, L. Sang, Z. Qin, 2019, Ultra-Wide Bandgap Semiconductor Materials.

Self-aligned enhancement-mode AlGaN/GaN HEMTs using 25 keV fluorine ion implantation

Kevin J. Chen, Hongwei Chen, Maojun Wang, 2010, 68th Device Research Conference.

Low ON-Resistance GaN Schottky Barrier Diode With High $V_{\mathrm{ON}}$ Uniformity Using LPCVD Si3N4 Compatible Self-Terminated, Low Damage Anode Recess Technology

Yilong Hao, Yufeng Jin, Cheng P. Wen, 2018, IEEE Electron Device Letters.

Schottky-MOS Hybrid Anode AlGaN/GaN Lateral Field-Effect Rectifier With Low Onset Voltage and Improved Breakdown Voltage

C. Wen, Wengang Wu, Maojun Wang, 2017, IEEE Electron Device Letters.

Fabrication of High-Uniformity and High-Reliability Si3N4/AlGaN/GaN MIS-HEMTs With Self-Terminating Dielectric Etching Process in a 150-mm Si Foundry

Yilong Hao, Dongmin Chen, Peng Liu, 2018, IEEE Transactions on Electron Devices.

Leakage current reduction in planar AlGaN/GaN MISHEMT with drain surrounded by the gate channel

Xinnan Lin, Maojun Wang, Dongmin Chen, 2017, China International Forum on Solid State Lighting.

Improvement of the Off-State Breakdown Voltage With Fluorine Ion Implantation in AlGaN/GaN HEMTs

Maojun Wang, K. J. Chen, Maojun Wang, 2011, IEEE Transactions on Electron Devices.

Measurement of the Transport Property of 2-DEG in AlGaN/GaN Heterostructures Based on Circular Transmission Line Modeling of Two Concentric-Circle Schottky Contacts

C. Wen, Maojun Wang, Y. Hao, 2018, IEEE Transactions on Electron Devices.

Fermi-level depinning and hole injection induced two-dimensional electron related radiative emissions from a forward biased Ni/Au-AlGaN/GaN Schottky diode

Maojun Wang, Baikui Li, Jiannong Wang, 2009 .

Suppressing Buffer-Induced Current Collapse in GaN HEMTs with a Source-Connected p-GaN (SCPG): A Simulation Study

C. Wen, Maojun Wang, B. Xie, 2021, Electronics.

Off-State Breakdown Characterization in AlGaN/GaN HEMT Using Drain Injection Technique

Maojun Wang, Maojun Wang, Kevin J Chen, 2010, IEEE Transactions on Electron Devices.

Investigation of Thermally Induced Threshold Voltage Shift in Normally-OFF p-GaN Gate HEMTs

Jin Wei, Maojun Wang, Fengwei Ji, 2022, IEEE Transactions on Electron Devices.

The Device Instability of p-GaN Gate HEMTs Induced by Self-Heating Effect Investigated by on-State Drain Current Injection (DCI) Technique

Bo Zhang, Qi Zhou, Maojun Wang, 2022, IEEE Transactions on Electron Devices.

Gate/Drain Coupled Barrier Lowering Effect and Negative Threshold Voltage Shift in Schottky-Type p-GaN Gate HEMT

Maojun Wang, Y. Hao, Jin Wei, 2022, IEEE Transactions on Electron Devices.

650-V E-Mode p-GaN Gate HEMT With Schottky Source Extension Towards Enhanced Short-Circuit Reliability

Maojun Wang, Jin Wei, Yanlin Wu, 2023, IEEE Electron Device Letters.

Impact of Silicon Substrate with Low Resistivity on Vertical Leakage Current in AlGaN/GaN HEMTs

Shan Wu, Yue Xu, Bo Shen, 2019, Applied Sciences.

Investigation of the Trap States and V th Instability in Normally-Off GaN MIS-FETs With LPCVD SiNx/PEALD AlN Gate Dielectric Stack and In Situ H2/N2 Plasma Pretreatment

Maojun Wang, Jiayin He, X. Wang, 2023, IEEE Transactions on Electron Devices.

Characterization of Gate Leakage and Reliability of Normally-OFF GaN MOSFET with LPCVD-SiNx/PEALD-AlN Dual Gate Dielectric and In-Situ H2(15%)/N2(85%) Plasma Pretreatment

Maojun Wang, Jianlong He, Z. Fu, 2022, Journal of Nanoelectronics and Optoelectronics.

Performance enhancement of normally-off Al2O3/AlN/GaN MOS-Channel-HEMTs with an ALD-grown AlN interfacial layer

Shu Yang, Cheng Liu, Kevin J. Chen, 2014, 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Time-dependent threshold voltage drift induced by interface traps in normally-off GaN MOSFET with different gate recess technique

C. Wen, Wengang Wu, Maojun Wang, 2016 .