A. A. Rahman

发表

Gate Leakage Mechanisms in AlGaN/GaN and AlInN/GaN HEMTs: Comparison and Modeling

Amitava DasGupta, Nandita DasGupta, Arnab Bhattacharya, 2013, IEEE Transactions on Electron Devices.

MOVPE growth of semipolar III-nitride semiconductors on CVD graphene

M. Deshmukh, A. A. Rahman, Arnab Bhattacharya, 2013 .

ICP-RIE etching of polar, semi-polar and non-polar AlN: comparison of Cl2/Ar and Cl2/BCl3/Ar plasma chemistry and surface pretreatment

Arnab Bhattacharya, A. A. Rahman, Arnab Bhattacharya, 2014 .

Layered transition metal dichalcogenides: promising near-lattice-matched substrates for GaN growth

Huili Grace Xing, Debdeep Jena, Vladimir Protasenko, 2015, Scientific Reports.

Influence of growth parameters on the sub-bandgap absorption of MOVPE-grown GaN measured using photothermal deflection spectroscopy

M. Laskar, A. A. Rahman, N. Lobo, 2008 .

Laser induced structural phase transitions in Cu3SbS4 thin films

A. Bhattacharya, A. A. Rahman, Emroj Hossain, 2019, Semiconductor Science and Technology.

Reduction in Gate Leakage Current of AlGaN/GaN HEMT by Rapid Thermal Oxidation

N. Dasgupta, A. DasGupta, A. A. Rahman, 2014 .

Large-area, thermally-sulfurized WS2 thin films: control of growth direction and use as a substrate for GaN epitaxy

A. Bhattacharya, A. A. Rahman, B. Chalke, 2020, Semiconductor Science and Technology.

Direct MOVPE growth of semipolar (112¯2) AlxGa1−xN across the alloy composition range

A. A. Rahman, Arnab Bhattacharya, N. Hatui, 2016 .

MOVPE growth of semipolar (112¯2) Al1−xInxN across the alloy composition range (0≤x≤0.55)

M. Kneissl, A. A. Rahman, S. Subramanian, 2015 .

Inductively coupled plasma–reactive ion etching of c- and a-plane AlGaN over the entire Al composition range: Effect of BCl3 pretreatment in Cl2/Ar plasma chemistry

M. Laskar, A. A. Rahman, M. Gokhale, 2013 .

High-resolution X-ray diffraction investigations of the microstructure of MOVPE grown a-plane AlGaN epilayers

M. Laskar, A. A. Rahman, N. Hatui, 2011 .

MOVPE growth and characterization of a ‐plane AlGaN over the entire composition range

M. Laskar, A. A. Rahman, M. Gokhale, 2010 .

Growth of high-quality GaN on (1 0 0) Ga2O3 substrates by facet-controlled MOVPE

A. Bhattacharya, A. A. Rahman, M. Gokhale, 2019, Journal of Crystal Growth.

Optimization of a -plane (112¯0) InN grown via MOVPE on a-plane GaN buffer layers on r -plane (11¯02) sapphire

M. Laskar, A. Bhattacharya, A. A. Rahman, 2010 .