B. Xie

发表

Investigation of Surface- and Buffer-Induced Current Collapse in GaN High-Electron Mobility Transistors Using a Soft Switched Pulsed $I-V$ Measurement

Yilong Hao, Wengang Wu, Dawei Yan, 2014, IEEE Electron Device Letters.

High-Performance Normally-Off ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}$ MOSFET Using a Wet Etching-Based Gate Recess Technique

Yilong Hao, Wengang Wu, Kevin J. Chen, 2013, IEEE Electron Device Letters.

Application of Proportional Difference Operator method on retention characteristics study of Flash Memory

Mingzhen Xu, Changhua Tan, B. Xie, 2010, 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology.

Quasi-Vertical GaN Schottky Barrier Diode on Silicon Substrate With 1010 High On/Off Current Ratio and Low Specific On-Resistance

C. Wen, Maojun Wang, B. Xie, 2020, IEEE Electron Device Letters.

Buffer-Induced Time-Dependent OFF-State Leakage in AlGaN/GaN High Electron Mobility Transistors on Silicon

C. Wen, Wengang Wu, Maojun Wang, 2016, IEEE Transactions on Electron Devices.

A GaN HEMT Structure Allowing Self-Terminated, Plasma-Free Etching for High-Uniformity, High-Mobility Enhancement-Mode Devices

C. Wen, Wengang Wu, Maojun Wang, 2016, IEEE Electron Device Letters.

Gate-Recessed Normally OFF GaN MOSHEMT With High-Temperature Oxidation/Wet Etching Using LPCVD Si3N4 as the Mask

C. Wen, Maojun Wang, B. Xie, 2018, IEEE Transactions on Electron Devices.

Characterization of 880 V Normally Off GaN MOSHEMT on Silicon Substrate Fabricated With a Plasma-Free, Self-Terminated Gate Recess Process

C. Wen, Wengang Wu, Maojun Wang, 2018, IEEE Transactions on Electron Devices.

900 V/1.6 ${\rm m}\Omega\cdot{\rm cm}^{2}$ Normally Off ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}$ MOSFET on Silicon Substrate

Kevin J. Chen, C. Wen, Wengang Wu, 2014, IEEE Transactions on Electron Devices.

Investigation of the threshold voltage drift in enhancement mode GaN MOSFET under negative gate bias stress

C. Wen, Wengang Wu, Maojun Wang, 2015 .

300°C operation of normally-off AlGaN/GaN MOSFET with low leakage current and high on/off current ratio

Xiao-hua Ma, Jincheng Zhang, Wengang Wu, 2014 .

Oxidation-based wet-etching method for AlGaN/GaN structure with different oxidation times and temperatures

Wengang Wu, Maojun Wang, B. Xie, 2013, Rare Metals.

Locally non-uniform oxidation in self-terminating thermal oxidation assisted wet etching technique for AlGaN/GaN heterostructure

Y. Hao, Xiao-hua Ma, Jincheng Zhang, 2015 .

Investigation of oxidation process in self-terminating gate recess wet etching technique for AlGaN/GaN normally-off MOSFETs

Y. Hao, Jincheng Zhang, Wengang Wu, 2014 .

Application of Proportional Difference Operator Method on Endurance Characteristics study of Flash Memory

Yandong He, Mingzhen Xu, Changhua Tan, 2006, 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings.

High Temperature Characteristics of GaN-Based Inverter Integrated With Enhancement-Mode (E-Mode) MOSFET and Depletion-Mode (D-Mode) HEMT

Xiaoping Li, Jinyan Wang, Yong Cai, 2014, IEEE Electron Device Letters.

Demonstration of Normally-Off Recess-Gated AlGaN/GaN MOSFET Using GaN Cap Layer as Recess Mask

Xiaohua Ma, Yue Hao, Min Yu, 2014, IEEE Electron Device Letters.

Fabrication of Normally Off AlGaN/GaN MOSFET Using a Self-Terminating Gate Recess Etching Technique

Xiaohua Ma, Yang Liu, Min Yu, 2013, IEEE Electron Device Letters.

GaN-on-Si Quasi-Vertical p-n Diode With Junction Termination Extension Based on Hydrogen Plasma Treatment and Diffusion

C. Wen, Maojun Wang, B. Xie, 2023, IEEE Transactions on Electron Devices.

Correlation Between Reverse Leakage Current and Electric Field Spreading in GaN Vertical SBD With High-Energy Ion Implanted Guard Rings

C. Wen, Maojun Wang, B. Xie, 2023, IEEE Transactions on Electron Devices.

Effect of cryogenic temperature characteristics on 0.18-μm silicon-on-insulator devices*

Bo Li, Jianhui Bu, Jinshun Bi, 2016 .

Low ON-Resistance GaN Schottky Barrier Diode With High $V_{\mathrm{ON}}$ Uniformity Using LPCVD Si3N4 Compatible Self-Terminated, Low Damage Anode Recess Technology

Yilong Hao, Yufeng Jin, Cheng P. Wen, 2018, IEEE Electron Device Letters.

Suppressing Buffer-Induced Current Collapse in GaN HEMTs with a Source-Connected p-GaN (SCPG): A Simulation Study

C. Wen, Maojun Wang, B. Xie, 2021, Electronics.

Time-dependent threshold voltage drift induced by interface traps in normally-off GaN MOSFET with different gate recess technique

C. Wen, Wengang Wu, Maojun Wang, 2016 .