Jinyan Wang

发表

Investigation of Surface- and Buffer-Induced Current Collapse in GaN High-Electron Mobility Transistors Using a Soft Switched Pulsed $I-V$ Measurement

Yilong Hao, Wengang Wu, Dawei Yan, 2014, IEEE Electron Device Letters.

High-Performance Normally-Off ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}$ MOSFET Using a Wet Etching-Based Gate Recess Technique

Yilong Hao, Wengang Wu, Kevin J. Chen, 2013, IEEE Electron Device Letters.

The Leakage Current of the Schottky Contact on the Mesa Edge of AlGaN/GaN Heterostructure

C. Xu, Hongwei Chen, Jinyan Wang, 2007, IEEE Electron Device Letters.

Impact of E‐Mode Gallium Nitride High Electron Mobility Transistor with P‐Type Gate on Waveform Distortion in an AirFuel Wireless Power Transfer System

L. Xia, Wengang Wu, Jinyan Wang, 2020, physica status solidi (a).

AlGaN/GaN dual gate MOS HFET for power device applications

Baoshun Zhang, C. Wen, Jinyan Wang, 2010, 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology.

Hot carrier induced degradation in mesa-isolated n-channel SOI MOSFETs operating in a Bi-MOS mode

Ru Huang, Yangyuan Wang, Xing Zhang, 2001 .

Kilovolt GaN MOSHEMT on silicon substrate with breakdown electric field close to the theoretical limit

C. Wen, Wengang Wu, Maojun Wang, 2017, 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD).

Buffer-Induced Time-Dependent OFF-State Leakage in AlGaN/GaN High Electron Mobility Transistors on Silicon

C. Wen, Wengang Wu, Maojun Wang, 2016, IEEE Transactions on Electron Devices.

An “ohmic-first” self-terminating gate-recess technique for normally-off Al2O3/GaN MOSFET

Yandong He, Wengang Wu, Mengjun Li, 2018 .

A study on the minority carrier diffusion length in n-type GaN films

Hui Yang, C. Wen, D. Deng, 2007 .

Theoretical analysis of buffer trapping effects on off-state breakdown between gate and drain in AlGaN/GaN HEMTs

Wengang Wu, Lin Zhu, Jinyan Wang, 2016, 2016 International Conference on Integrated Circuits and Microsystems (ICICM).

High breakdown AlGaN/GaN MOSHEMT with thermal oxidized Ni/Ti as gate insulator

Yilong Hao, Ying Li, Min Yu, 2010 .

Low Leakage Current and High-Cutoff Frequency AlGaN/GaN MOSHEMT Using Submicrometer-Footprint Thermal Oxidized TiO2/NiO as Gate Dielectric

K. Lau, C. Wen, Wengang Wu, 2013, IEEE Electron Device Letters.

Normally-off Al 2 O 3 /GaN MOSFET: Role of border traps on the device transport characteristics

Yandong He, Wengang Wu, Maojun Wang, 2017 .

A GaN HEMT Structure Allowing Self-Terminated, Plasma-Free Etching for High-Uniformity, High-Mobility Enhancement-Mode Devices

C. Wen, Wengang Wu, Maojun Wang, 2016, IEEE Electron Device Letters.

Improved performance of fully-recessed normally-off LPCVD SiN/GaN MISFET using N2O plasma pretreatment

Mengjun Li, Jinyan Wang, Hongyue Wang, 2019, Solid-State Electronics.

Characterization of 880 V Normally Off GaN MOSHEMT on Silicon Substrate Fabricated With a Plasma-Free, Self-Terminated Gate Recess Process

C. Wen, Wengang Wu, Maojun Wang, 2018, IEEE Transactions on Electron Devices.

Normally-off fully recess-gated GaN metal–insulator–semiconductor field-effect transistor using Al2O3/Si3N4 bilayer as gate dielectrics

Yandong He, Wengang Wu, Mengjun Li, 2017 .

Gate-Recessed Normally-OFF GaN MOSHEMT With Improved Channel Mobility and Dynamic Performance Using AlN/Si3N4 as Passivation and Post Gate-Recess Channel Protection Layers

Kevin J. Chen, C. Wen, Wengang Wu, 2017, IEEE Electron Device Letters.

900 V/1.6 ${\rm m}\Omega\cdot{\rm cm}^{2}$ Normally Off ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}$ MOSFET on Silicon Substrate

Kevin J. Chen, C. Wen, Wengang Wu, 2014, IEEE Transactions on Electron Devices.

823-mA/mm Drain Current Density and 945-MW/cm2 Baliga’s Figure-of-Merit Enhancement-Mode GaN MISFETs With a Novel PEALD-AlN/LPCVD-Si3N4 Dual-Gate Dielectric

Yandong He, Wengang Wu, Mengjun Li, 2018, IEEE Electron Device Letters.

Investigation of the threshold voltage drift in enhancement mode GaN MOSFET under negative gate bias stress

C. Wen, Wengang Wu, Maojun Wang, 2015 .

300°C operation of normally-off AlGaN/GaN MOSFET with low leakage current and high on/off current ratio

Xiao-hua Ma, Jincheng Zhang, Wengang Wu, 2014 .

Normally-off hybrid Al2O3/GaN MOSFET on silicon substrate based on wet-etching

Kevin J. Chen, C. Wen, Wengang Wu, 2014, 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors Using a Nano-Channel Array Structure

Baoshun Zhang, Jinyan Wang, Zhihong Feng, 2011 .

Oxidation-based wet-etching method for AlGaN/GaN structure with different oxidation times and temperatures

Wengang Wu, Maojun Wang, B. Xie, 2013, Rare Metals.

Locally non-uniform oxidation in self-terminating thermal oxidation assisted wet etching technique for AlGaN/GaN heterostructure

Y. Hao, Xiao-hua Ma, Jincheng Zhang, 2015 .

Investigation of oxidation process in self-terminating gate recess wet etching technique for AlGaN/GaN normally-off MOSFETs

Y. Hao, Jincheng Zhang, Wengang Wu, 2014 .

Enhancement-mode n-GaN gate p-channel heterostructure field effect transistors based on GaN/AlGaN 2D hole gas

Baoshun Zhang, Guohao Yu, Jinyan Wang, 2019, Applied Physics Letters.

Novel structural Ti/Al-based ohmic contacts on AlGaN/GaN heterostructures

Yangyuan Wang, C. Wen, Jinyan Wang, 2008, 2008 9th International Conference on Solid-State and Integrated-Circuit Technology.

Method to measure MOSFET inversion layer mobility

Mingzhen Xu, Jinyan Wang, Chang-Hua Tan, 1999 .

Improved Performance of Fully-Recessed High-Threshold-Voltage GaN MIS-HEMT With in Situ H₂/N₂ Plasma Pretreatment

Wengang Wu, J. Mo, Maojun Wang, 2022, IEEE Electron Device Letters.

Study on the charging current of surface traps in AlGaN/GaN high electron mobility transistors with a slot gate structure

Wengang Wu, Mengjun Li, Jinyan Wang, 2019, Applied Physics Letters.

Investigation of Defect Characteristics and Carrier Transport Mechanisms in GaN Layers With Different Carbon Doping Concentration

A. Sibaja-Hernandez, E. Simoen, Jinyan Wang, 2020, IEEE Transactions on Electron Devices.

Enhancement-Mode Operation of Nanochannel Array (NCA) AlGaN/GaN HEMTs

Baoshun Zhang, Guodong Gu, Zhihong Feng, 2012, IEEE Electron Device Letters.

High Temperature Characteristics of GaN-Based Inverter Integrated With Enhancement-Mode (E-Mode) MOSFET and Depletion-Mode (D-Mode) HEMT

Xiaoping Li, Jinyan Wang, Yong Cai, 2014, IEEE Electron Device Letters.

Demonstration of Normally-Off Recess-Gated AlGaN/GaN MOSFET Using GaN Cap Layer as Recess Mask

Xiaohua Ma, Yue Hao, Min Yu, 2014, IEEE Electron Device Letters.

Fabrication of Normally Off AlGaN/GaN MOSFET Using a Self-Terminating Gate Recess Etching Technique

Xiaohua Ma, Yang Liu, Min Yu, 2013, IEEE Electron Device Letters.

Analysis of surface roughness in Ti/Al/Ni/Au Ohmic contact to AlGaN/GaN high electron mobility transistors

Baoshun Zhang, Min Yu, Zhihua Dong, 2010 .

Improved fabrication of fully-recessed normally-off SiN/SiO2/GaN MISFET based on the self-terminated gate recess etching technique

Wengang Wu, J. Mo, S. Cai, 2020 .

Schottky-MOS Hybrid Anode AlGaN/GaN Lateral Field-Effect Rectifier With Low Onset Voltage and Improved Breakdown Voltage

C. Wen, Wengang Wu, Maojun Wang, 2017, IEEE Electron Device Letters.

Enhanced Device Performance of AlGaN/GaN High Electron Mobility Transistors with Thermal Oxidation Treatment

Baoshun Zhang, C. Wen, Jincheng Zhang, 2011 .

Research on Silicon PIN Neutron Dose Detector

Jinyan Wang, Yufeng Jin, D. Tian, 2012 .

Simulation on Boron Concentration Profile in Silicon Introduced by Plasma Doping

Ru Huang, Xing Zhang, Jinyan Wang, 2010, IEEE Transactions on Plasma Science.

Analysis of semi-insulating carbon-doped GaN layers using deep-level transient spectroscopy

A. Sibaja-Hernandez, E. Simoen, S. Gendt, 2021, Journal of Applied Physics.

Analysis on the new mechanisms of low resistance stacked Ti/Al Ohmic contact structure on AlGaN/GaN HEMTs

Yilong Hao, Baoshun Zhang, Min Yu, 2010 .

AlGaN/GaN HEMTs with thermal oxidation treatment for microwave power applications

C. Wen, Wengang Wu, Jinyan Wang, 2012, 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology.

Microscopic mechanism for unipolar resistive switching behaviour of nickel oxides

Jinfeng Kang, Y. Y. Wang, Hongyu Yu, 2012 .

A Fully Integrated Heterogenous Si-CMOS/GaN 500 MHz 6 V-to-18 V Boost Converter Chip

D. Disney, Ziheng Liu, Jinyan Wang, 2023, IEEE Transactions on Power Electronics.

Radiation effects in printed flexible single-walled carbon nanotube thin-film transistors

M. Yu, Haochuan Wan, Le Cai, 2019, AIP Advances.