Ting-Fu Chang

Effects of Gate Field Plates on the Surface State Related Current Collapse in AlGaN/GaN HEMTs

Yung C. Liang, G. Samudra, Huolin Huang, 2014, IEEE Transactions on Power Electronics.

6.5 V High Threshold Voltage AlGaN/GaN Power Metal-Insulator-Semiconductor High Electron Mobility Transistor Using Multilayer Fluorinated Gate Stack

Yung C. Liang, G. Lo, G. Samudra, 2015, IEEE Electron Device Letters.

Threshold voltage instability in AlGaN/GaN HEMTs

Yung C. Liang, G. Samudra, Ting-Fu Chang, 2015, 2015 IEEE 11th International Conference on Power Electronics and Drive Systems.

Stress and thermal characterization of 4H-SiC microelectromechanical structures

K. Cheong, G. Xia, Ting-Fu Chang, 2017 .

Low Turn-on voltage dual metal AlGaN/GaN Schottky barrier diode

Ting-Fu Chang, Chih-Fang Huang, Tsung-Yi Huang, 2015 .

Phenomenon of Drain Current Instability on p-GaN Gate AlGaN/GaN HEMTs

Yung C. Liang, G. Samudra, Ting-Fu Chang, 2015, IEEE Transactions on Electron Devices.

Modelling temperature dependence on AlGaN/GaN power HEMT device characteristics

Yung C. Liang, G. Lo, G. Samudra, 2013 .