Chih-Fang Huang

发表

Effects of Gate Field Plates on the Surface State Related Current Collapse in AlGaN/GaN HEMTs

Yung C. Liang, G. Samudra, Huolin Huang, 2014, IEEE Transactions on Power Electronics.

A Comprehensive Analytical Study of Dielectric Modulated Drift Regions—Part I: Static Characteristics

Chih-Fang Huang, Jiuyang Zhou, Chia-Hui Cheng, 2016, IEEE Transactions on Electron Devices.

Theoretical Analysis of Dielectric Modulated Drift Region for Si Power Devices

Chih-Fang Huang, Jiuyang Zhou, Yen-Hsin Chen, 2015, IEEE Electron Device Letters.

High-temperature studies of multiple fluorinated traps within an Al2O3 gate dielectric for E-Mode AlGaN/GaN power MIS-HEMTs

Yung C. Liang, G. Lo, G. Samudra, 2016 .

Effect of Gate Threshold Swings by ALD-Al 2 O 3 / AlGaN Interfacial Traps in GaN Power HEMT with Multiple Fluorinated Gate Dielectric Layers

Yung C. Liang, G. Lo, G. Samudra, 2015 .

0.18 µm BCD technology platform with best-in-class 6 V to 70 V power MOSFETs

Jeng Gong, Jun Cai, C. C. Cheng, 2012, 2012 24th International Symposium on Power Semiconductor Devices and ICs.

On the Effects of High-K Dielectric RESURF in High-Voltage Bulk FinFETs

Chih-Fang Huang, Chia-Hui Cheng, F. Zhao, 2020, IEEE Journal of the Electron Devices Society.

Simple scheme to increase hold voltage for silicon-controlled rectifier

J. Gong, Chih-Fang Huang, Tsung-Yi Huang, 2014 .

A 0.25um High Voltage LDMOSFET for RF Applications and High-frequency Parameter Extraction

J. Gong, Chih-Fang Huang, C. Chu, 2012 .

Investigation of honey as the electrolyte gate dielectrics of field effect transistors

K. Cheong, Chih-Fang Huang, Binghao Wang, 2020 .

Characterization for N- and P-type 3C-SiC on Si (1 0 0) substrate with thermal anneal and pulsed excimer laser anneal

Chih-Fang Huang, F. Zhao, Kung-Yen Lee, 2013 .

First demonstration of 4H-SiC RF bipolar junction transistors on a semi-insulating substrate with f/sub T//f/sub MAX/ of 7/5.2 GHz

J. Torvik, I. Perez-Wurfl, Chih-Fang Huang, 2005, IEEE MTT-S International Microwave Symposium Digest, 2005..

6.5 V High Threshold Voltage AlGaN/GaN Power Metal-Insulator-Semiconductor High Electron Mobility Transistor Using Multilayer Fluorinated Gate Stack

Yung C. Liang, G. Lo, G. Samudra, 2015, IEEE Electron Device Letters.

Demonstration of p-GaN/AlGaN/GaN High Electron Mobility Transistors With an Indium–Tin–Oxide Gate Electrode

Chih-Fang Huang, Tian-Li Wu, W. Kuo, 2021, IEEE Journal of the Electron Devices Society.

High output swing monolithic inverter with E-D mode MIS-HEMTs for GaN power integrated circuits

Yung C. Liang, G. Lo, G. Samudra, 2015, 2015 IEEE 11th International Conference on Power Electronics and Drive Systems.

Fin-shaped AlGaN/GaN high electron mobility magnetoresistive sensor device

Yung C. Liang, L. Xia, Chih-Fang Huang, 2021 .

Threshold voltage instability in AlGaN/GaN HEMTs

Yung C. Liang, G. Samudra, Ting-Fu Chang, 2015, 2015 IEEE 11th International Conference on Power Electronics and Drive Systems.

Physical mechanism on the suppression of dynamic resistance degradation by multi-mesa-channel in AlGaN/GaN high electron mobility transistors

Yung C. Liang, Chih-Fang Huang, Kailin Ren, 2019 .

High-Performance 1-$\mu\hbox{m}$ GaN n-MOSFET With MgO/MgO–$\hbox{TiO}_{2}$ Stacked Gate Dielectrics

Ko-Tao Lee, J. Gong, Chih-Fang Huang, 2011, IEEE Electron Device Letters.

Ultralow Capacitance Transient Voltage Suppressor Design

J. Gong, Chih-Fang Huang, Tsung-Yi Huang, 2016, IEEE Transactions on Electron Devices.

Influence of low temperature oxidation and nitrogen passivation on the MOS interface of C-face 4H-SiC

Y. H. Chang, Shuen-De Wu, Chih-Fang Huang, 2013 .

High-Quality Nanolaminates on p-GaN MOS Capacitor

Ko-Tao Lee, J. Gong, Chih-Fang Huang, 2010 .

High-Quality $\hbox{MgO}/\hbox{TiO}_{2}/\hbox{MgO}$ Nanolaminates on p-GaN MOS Capacitor

Ko-Tao Lee, J. Gong, Chih-Fang Huang, 2010, IEEE Electron Device Letters.

Synthesis of graphene on silicon carbide substrates at low temperature

Fu-Rong Chen, Wei-Yu Chen, Keh-Chyang Leou, 2009 .

Post deposition annealing effect on properties of Y2O3/Al2O3 stacking gate dielectric on 4H-SiC

K. Cheong, Chih-Fang Huang, Y. H. Wong, 2019, Materials Letters.

Post deposition annealing effect on properties of Y 2 O 3 / Al 2 O 3 stacking gate dielectric on 4 H-SiC

K. Cheong, Chih-Fang Huang, Y. H. Wong, 2019 .

The parameter extraction including field-plate effect of 0.25 µm 12 V LDMOSFETs

J. Gong, Chih-Fang Huang, C. Chu, 2012 .

Demonstration of Annealing-free Metal-Insulator-Semiconductor (MIS) Ohmic Contacts on a GaN Substrate using Low Work-function Metal Ytterbium (Yb) and Al2O3 Interfacial Layer

K. Kao, Chih-Fang Huang, Tian-Li Wu, 2019, 2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia).

A Novel Deep Junction Edge Termination for Superjunction MOSFETs

Chih-Fang Huang, Chia-Hui Cheng, F. Zhao, 2018, IEEE Electron Device Letters.

The Study of the Electrothermal Property of High-Voltage Drain-Extended MOSFETs

H. Tuan, J. Gong, Chih-Fang Huang, 2012, IEEE Transactions on Electron Devices.

Investigation of voltage-dependent drift region resistance on high-voltage drain-extended MOSFETs' I-V characteristics

H. Tuan, J. Gong, Chih-Fang Huang, 2012 .

Simulation Study of 4H-SiC Trench MOSFETs with Various Gate Structures

Chih-Fang Huang, Tian-Li Wu, F. Zhao, 2019, 2019 Electron Devices Technology and Manufacturing Conference (EDTM).

A Comprehensive Analytical Study on Dielectric Modulated Drift Regions—Part II: Switching Performances

Chih-Fang Huang, Jiuyang Zhou, Chia-Hui Cheng, 2016, IEEE Transactions on Electron Devices.

First Demonstration of 4H-SiC RF Bipolar Junction Transistors on a Semi-insulating Substrate with fT/fMAX of 7/5.2 GHz

J. Torvik, I. Perez-Wurfl, Chih-Fang Huang, 2005 .

High-performance power BJTs in 4H-SiC

J. Cooper, Chih-Fang Huang, 2002, Proceedings. IEEE Lester Eastman Conference on High Performance Devices.

4H-SiC power bipolar transistors with common emitter current gain >50

J. Cooper, Chih-Fang Huang, 2002, 60th DRC. Conference Digest Device Research Conference.

RESURF p-n Diode With a Buried Layer, a Comprehensive Study

H. Tuan, J. Gong, Chih-Fang Huang, 2013, IEEE Transactions on Electron Devices.

Experimental Study of Counter-Doped Junction Termination Extension for 4H–SiC Power Devices

Chih-Fang Huang, F. Zhao, Jheng-Yi Jiang, 2015, IEEE Electron Device Letters.

Design of novel normally-off AlGaN/GaN HEMTs with combined gate recess and floating charge structures

G. Samudra, Huolin Huang, Chih-Fang Huang, 2013, 2013 IEEE 10th International Conference on Power Electronics and Drive Systems (PEDS).

An Automated-Switching Precision Decade Capacitor

Jeng Gong, Jimmy C. Hsu, Chih-Fang Huang, 2014 .

Photoelectrochemical etching to fabricate single-crystal SiC MEMS for harsh environments

Chih-Fang Huang, Feng Zhao, Mohammad M. Islam, 2011 .

Growth of 3C-SiC on si(111) using the four-step non-cooling process

Chih-Fang Huang, Wei-Yu Chen, J. Hwang, 2010 .

Crystal Quality of 3C-SiC Influenced by the Diffusion Step in the Modified Four-Step Method

Chih-Fang Huang, Wei-Yu Chen, J. Hwang, 2010 .

Electrical Characteristics of $\hbox{Al}_{2} \hbox{O}_{3}/\hbox{TiO}_{2}/\hbox{Al}_{2}\hbox{O}_{3}$ Nanolaminate MOS Capacitor on $p$-GaN With Post Metallization Annealing and $(\hbox{NH}_{4})_{2}\hbox{S}_{X}$ Treatments

Ko-Tao Lee, J. Gong, Chih-Fang Huang, 2009, IEEE Electron Device Letters.

Diffusivity of Si in the 3C-SiC Buffer Layer on Si(100) by X-ray Photoelectron Spectroscopy

Chih-Fang Huang, Wei-Yu Chen, J. Hwang, 2010 .

Physical mechanism of fin-gate AlGaN/GaN MIS-HEMT: Vth model

Yung C. Liang, Chih-Fang Huang, Kailin Ren, 2016, 2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).

Synthesis of large-scale 2-D MoS2 atomic layers by hydrogen-free and promoter-free chemical vapor deposition

C. Raymond, G. Xia, Chih-Fang Huang, 2016 .

The Effect of Self-Heating in LDMOSFET Expansion Regime

H. Tuan, J. Gong, Chih-Fang Huang, 2012, IEEE Transactions on Electron Devices.

Stress and thermal characterization of 4H-SiC microelectromechanical structures

K. Cheong, G. Xia, Ting-Fu Chang, 2017 .

Low Turn-on voltage dual metal AlGaN/GaN Schottky barrier diode

Ting-Fu Chang, Chih-Fang Huang, Tsung-Yi Huang, 2015 .

Phenomenon of Drain Current Instability on p-GaN Gate AlGaN/GaN HEMTs

Yung C. Liang, G. Samudra, Ting-Fu Chang, 2015, IEEE Transactions on Electron Devices.

Compact Physical Models for AlGaN/GaN MIS-FinFET on Threshold Voltage and Saturation Current

Yung C. Liang, Chih-Fang Huang, Kailin Ren, 2018, IEEE Transactions on Electron Devices.

Modelling temperature dependence on AlGaN/GaN power HEMT device characteristics

Yung C. Liang, G. Lo, G. Samudra, 2013 .

Study of SiO2 encapsulation for aluminum and phosphorus implant activation in 4H-SiC

Mohammad M. Islam, Chih-Fang Huang, F. Zhao, 2010 .

Response analysis of optically modulated scatterer probes for electromagnetic-field measurement

J. Gong, Chih-Fang Huang, J. C. Hsu, 2009, 2009 Asia Pacific Microwave Conference.

Dimension Dependence of Unusual HCI-Induced Degradation on N-Channel High-Voltage DEMOSFET

Jeng Gong, Chih-Fang Huang, Hsueh-Liang Chou, 2013, IEEE Transactions on Electron Devices.

Fabrication and characterization of single-crystal 4H-SiC microactuators for MHz frequency operation and determination of Young's modulus

Chih-Fang Huang, Wei Du, F. Zhao, 2014 .

Demonstration of Lateral IGBTs in 4H-SiC

M. Tsai, Young-Shying Chen, Chih-Fang Huang, 2013, IEEE Electron Device Letters.

Design and Fabrication of 4H–SiC Lateral High-Voltage Devices on a Semi-Insulating Substrate

M. Tsai, Chih-Fang Huang, F. Zhao, 2012, IEEE Transactions on Electron Devices.

Demonstration of 3500-V 4H-SiC Lateral MOSFETs

J. Gong, Chih-Fang Huang, Wen-Shan Lee, 2011, IEEE Electron Device Letters.

Electrostatically-Actuated 4H-SiC In-plane and Out-of-Plane High Frequency MEMS Resonator

Chih-Fang Huang, T. Karacolak, F. Zhao, 2016, IEEE Microwave and Wireless Components Letters.

Single Crystalline 4H-SiC MEMS Devices with N-P-N Epitaxial Structure

Chih-Fang Huang, F. Zhao, Zhibang Chen, 2014 .

Single-Crystal SiC Resonators by Photoelectrochemical Etching

Mohammad M. Islam, Chih-Fang Huang, F. Zhao, 2012 .

Fully Transparent AlGaN/GaN High Electron Mobility Transistors Fabricated With Indium-Tin-Oxide Electrodes

Chih-Fang Huang, Tian-Li Wu, C. Hsu, 2021, IEEE Electron Device Letters.

3.3 kV Class 4 H-SiC Double-Implanted MOSFET With Excellent Radiation Hardness Against Gamma Rays Using Counter-Doped Junction Termination Extension

Chih-Fang Huang, D. Chao, Jheng-Yi Jiang, 2021, IEEE Electron Device Letters.

Doping Concentration and Surface Morphology of 4H-SiC C-Face Epitaxial Growth

Chih-Fang Huang, Kung-Yen Lee, S. Lee, 2010 .

A perspective on leakage current induced by threading dislocations in 4H-SiC Schottky barrier diodes

Ting-Wei Chen, Chih-Fang Huang, L. Hong, 2022, Materials Letters.

Square-Gate AlGaN/GaN HEMTs With Improved Trap-Related Characteristics

Chih-Fang Huang, Chih-Yuan Chan, Yu-Syuan Lin, 2009, IEEE Transactions on Electron Devices.

Counter-Doped JTE, an Edge Termination for HV SiC Devices With Increased Tolerance to the Surface Charge

M. Tsai, Chih-Fang Huang, Li-heng Lee, 2015, IEEE Transactions on Electron Devices.

Toward Understanding Thickness Dependence on Dielectric Breakdown Mechanism Under Forward Gate Bias in 4H-SiC MOS Technologies

Chih-Fang Huang, Tian-Li Wu, Pin-Wei Huang, 2023, IEEE Transactions on Electron Devices.

Electrical deterioration of 4H-SiC MOS capacitors due to bulk and interface traps induced by proton irradiation

Chih-Fang Huang, D. Chao, Jheng-Yi Jiang, 2023, Microelectronics Reliability.

Impact of the TiN barrier layer on the positive bias temperature instabilities of high-k/metal-gate field effect transistors

S. Chung, J. Gong, Chih-Fang Huang, 2015 .

Influence of displacement damage induced by neutron irradiation on effective carrier density in 4H-SiC SBDs and MOSFETs

C. Ku, Chih-Fang Huang, C. Yen, 2019, Japanese Journal of Applied Physics.

Ultra-low turn-on voltage quasi-vertical GaN Schottky barrier diode with homogeneous barrier height

I. Mitrovic, Chih-Fang Huang, D. Chao, 2023, Solid-State Electronics.

The impact of surface morphology on C- and Si-face 4H-SiC Schottky barrier diodes

M. Capano, Chih-Fang Huang, Wenzhou Chen, 2007 .

High Voltage (3130 V) 4H-SiC Lateral p-n Diodes on a Semiinsulating Substrate

Chih-Chung Tsai, Chih-Fang Huang, Jin-Rong Kuo, 2008, IEEE Electron Device Letters.

3510-V 390-m Omega . cm(2) 4H-SiC Lateral JFET on a Semi-Insulating Substrate

Chih-Fang Huang, Cheng-Li Kan, 2013 .

Study on the effects of Si implantation on the interface of 4H-SiC lateral MOSFETs

Chih-Fang Huang, Tian-Li Wu, Pin-Wei Huang, 2020, Japanese Journal of Applied Physics.

Numerical Study of 4H-SiC UMOSFETs with Split-Gate and P+ Shielding

Chih-Fang Huang, Tian-Li Wu, F. Zhao, 2020 .

The physical mechanism on the threshold voltage temperature stability improvement for GaN HEMTs with pre-fluorination argon treatment

Yung C. Liang, G. Lo, Chih-Fang Huang, 2016 .

A 700-V Device in High-Voltage Power ICs With Low On-State Resistance and Enhanced SOA

Jeng Gong, Chih-Fang Huang, Chun-Lin Tsai, 2013, IEEE Transactions on Electron Devices.