Julien Couvidat

Identification of GaN Buffer Traps in Microwave Power AlGaN/GaN HEMTs Through Low Frequency S-Parameters Measurements and TCAD-Based Physical Device Simulations

R. Quéré, R. Sommet, J. Nallatamby, 2017, IEEE Journal of the Electron Devices Society.

Low-Frequency Drain Noise Characterization and TCAD Physical Simulations of GaN HEMTs: Identification and Analysis of Physical Location of Traps

R. Quéré, J. Nallatamby, N. Subramani, 2018, IEEE Electron Device Letters.

Low-Frequency Noise Characterization in GaN HEMTs: Investigation of Deep Levels and Their Physical Properties

R. Quéré, D. Floriot, J. Nallatamby, 2017, IEEE Electron Device Letters.

Supply-terminal 40 MHz BW characterization of impedance-like nonlinear functions for envelope tracking PAs

Dominique Schreurs, Gustavo Avolio, Alberto Santarelli, 2016, 2016 87th ARFTG Microwave Measurement Conference (ARFTG).