M. Nagahara

A low-distortion and high-efficiency E-mode GaAs power FET based on a new method to improve device linearity focused on g/sub m/ value

J. Fukaya, Y. Nakasha, Y. Tateno, 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).

A 28V 250W GaAs power FET with high gain of 15.5 dB for W-CDMA base stations

S. Sano, M. Nagahara, K. Inoue, 2004, 2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535).

A 36 W CW AlGaN/GaN-power HEMT using surface-charge-controlled structure

S. Yokokawa, N. Hara, Y. Tateno, 2002, 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278).

Improved intermodulation distortion profile of AlGaN/GaN HEMT at high drain bias voltage

N. Hara, Y. Tateno, K. Joshin, 2002, Digest. International Electron Devices Meeting,.

Surface-charge controlled AlGaN/GaN-power HFET without current collapse and gm dispersion

N. Hara, Y. Tateno, K. Joshin, 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

Photoreflectance Study of GaAs/GaAsP Strained-Barrier Quantum Well Structures

Hiroyuki Yaguchi, Ryoichi Ito, Kentaro Onabe, 1993 .

Surface orientation dependence of growth rate of cubic GaN

Y. Shiraki, M. Nagahara, H. Yaguchi, 1994 .

Selective Growth of Cubic GaN in Small Areas on Patterned GaAs(100) Substrates by Metalorganic Vapor Phase Epitaxy

Y. Shiraki, M. Nagahara, H. Yaguchi, 1994 .