K. Boku

Reliability of Ferroelectric Random Access memory embedded within 130nm CMOS

J. Rodriguez, K. Remack, J. Gertas, 2010, 2010 IEEE International Reliability Physics Symposium.

Demonstration of a 4 Mb, high density ferroelectric memory embedded within a 130 nm, 5 LM Cu/FSG logic process

J. Rodriguez, K. Remack, K. Boku, 2002, Digest. International Electron Devices Meeting,.

Bit Distribution and Reliability of High Density 1.5 V Ferroelectric Random Access Memory Embedded with 130 nm, 5 lm Copper Complementary Metal Oxide Semiconductor Logic

Hugh P. McAdams, K. Remack, K. Boku, 2006 .

Manufacturable High-Density 8 Mbit One Transistor–One Capacitor Embedded Ferroelectric Random Access Memory

K. Remack, K. Boku, J. Eliason, 2008 .

Bit Distribution and Reliability of High Density 1.5V FRAM Embedded with 130nm, 5LM Copper CMOS Logic

Hugh P. McAdams, K. Remack, K. Boku, 2005 .

Reliability Demonstration of a Ferroelectric Random Access Memory Embedded within a 130nm CMOS Process

J. Rodriguez, K. Remack, J. Gertas, 2007, 2007 Non-Volatile Memory Technology Symposium.

Reliability properties of low-voltage ferroelectric capacitors and memory arrays

K. Remack, K. Boku, T. Moise, 2004, IEEE Transactions on Device and Materials Reliability.

High-Density 8Mb 1T-1C Ferroelectric Random Access Memory Embedded Within a Low-Power 130nm Logic Process

J. Rodriguez, K. Remack, J. Gertas, 2007, 2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics.

Reliability characterization of a Ferroelectric Random Access Memory embedded within 130nm CMOS

J. Gertas, K. Boku, D. Kim, 2008, 2008 17th IEEE International Symposium on the Applications of Ferroelectrics.

Full-Bit Functional, High-Density 8 Mbit One Transistor–One Capacitor Ferroelectric Random Access Memory Embedded within a Low-Power 130 nm Logic Process

K. Remack, J. Gertas, K. Boku, 2007 .