K. R. Udayakumar

Reliability of Ferroelectric Random Access memory embedded within 130nm CMOS

J. Rodriguez, K. Remack, J. Gertas, 2010, 2010 IEEE International Reliability Physics Symposium.

Low-power ferroelectric random access memory embedded in 180nm analog friendly CMOS technology

J. Rodriguez, C. Zhou, J. Rodriguez-Latorre, 2013, 2013 5th IEEE International Memory Workshop.

180nm FRAM reliability demonstration with ten years data retention at 125°C

J. Rodriguez, C. Zhou, J. Rodriguez-Latorre, 2013, 2013 IEEE International Reliability Physics Symposium (IRPS).